摘要:
It is an object of the present invention to provide a titanium electrode material which is low in cost and is excellent in electric conductivity, corrosion resistance and hydrogen absorption resistance, and a surface treatment method of a titanium electrode material. A titanium electrode material includes: on the surface of a titanium material including pure titanium or a titanium alloy, a titanium oxide layer having a thickness of 3 nm or more and 75 nm or less, and having an atomic concentration ratio of oxygen and titanium (O/Ti) at a site having the maximum oxygen concentration in the layer of 0.3 or more and 1.7 or less; and an alloy layer including at least one noble metal selected from Au, Pt, and Pd, and at least one non-noble metal selected from Zr, Nb, Ta, and Hf, having a content ratio of the noble metal and the non-noble metal of 35:65 to 95:5 by atomic ratio, and having a thickness of 2 nm or more, on the titanium oxide layer. The surface treatment method of a titanium electrode material includes a titanium oxide layer formation step, an alloy layer formation step, and a heat treatment step.
摘要翻译:本发明的目的是提供一种成本低且导电性,耐腐蚀性和耐氢吸收性优异的钛电极材料以及钛电极材料的表面处理方法。 钛电极材料包括:在包括纯钛或钛合金的钛材料的表面上,具有3nm以上且75nm以下的氧化钛层,并且具有氧和钛的原子浓度比( O / Ti)在层中的最大氧浓度为0.3以上且1.7以下的部位; 以及包含选自Au,Pt和Pd中的至少一种贵金属和选自Zr,Nb,Ta和Hf中的至少一种非贵金属的合金层,其具有贵金属和非金属的含量比, 在氧化钛层上的原子比为35:65〜95:5的贵金属,厚度为2nm以上。 钛电极材料的表面处理方法包括氧化钛层形成步骤,合金层形成步骤和热处理步骤。
摘要:
A switch (304) includes a plurality of bridges (3041, 3042, 3043, 3044, 3045) and a switch forwarding mechanism (20). Each of the bridges transmits and receives a TLP frame complying with PCI express to and from a device connected to each of the bridges. The switch forwarding mechanism includes a plurality of ports (1, 2, 3, 4, 5) to which the bridges are connected, respectively, selects an output port in dependence on a combination of destination information on the TLP frame input from one of the plurality of ports and the port which input the TLP frame, and outputs the TLP frame from the selected output port.
摘要:
An information recording/reproducing device includes with a recording medium having a recording surface and a probe array in which a plurality of probes are disposed in a direction intersecting at least a track direction for carrying out either the record processing or the reproduction processing of information by scanning a plurality of information tracks in parallel with the track direction along the rack direction on the recording surface. One of the recording medium and the probe array is divided into a plurality of divided portions in the intersecting direction, so that each of them is configured to include at least one information track or probe. The information recording/reproducing device also includes a first driving element for driving each of the plural portions divided in the intersecting direction and a second driving element for driving each of the probe arrays in the track direction with respect to the recording surface.
摘要:
A driving apparatus (100c) is provided with: a base portion (110); a stage portion (130) on which a driven object (12) is mounted and which can be displaced; an elastic portion (120) which connects the base portion and the stage portion and which has elasticity to displace the stage portion in one direction (Y axis); and a first applying device (161, 162, 22) for applying, to the base portion, an excitation force for displacing the stage portion such that the stage portion is resonated in the one direction at a resonance frequency determined by the stage portion and the elastic portion.
摘要:
A MEMS sensor includes a first substrate; a second substrate; a movable electrode portion and a fixed electrode portion which are arranged between the first substrate and the second substrate, wherein: conductive supporting portions of the movable electrode portion and the fixed electrode portion are, respectively, fixedly secured to a surface of the first substrate via a first insulating layer; a second insulating layer, a lead layer buried into the second insulating layer, and connection electrode portions that are electrically connected to the lead layer to be individually connected to the conductive supporting portions are provided on a surface of the second substrate; a metallic connection layer is formed on the surface of one of the respective conductive supporting portions; one of the respective connection electrode portions and the metallic connection layer are bonded together by eutectic bonding or diffusion bonding; and, at least each of the connection electrode portions has a thickness of about 4 μm or smaller.
摘要:
The invention provides an improved water heater and coffee maker for use in an aircraft. A water heater 1 of an aircraft has a water tank 20 to which water from a water tank 10 of the aircraft is fed via a solenoid valve 14 and a flowmeter 16. The water tank 20 is opened to the atmosphere, and it does not form a pressure vessel. The hot water heated by a rapid heating boiler 40 is sent to a coffee server 100, and sprinkled via a hot water shower head 170 into a coffee brewing cup 180. The brewed coffee is pooled in a coffee server 200. An electrostatic level sensor 260 senses the liquid surface level of the coffee, based on which power supply to the boiler is turned off and supply of hot water is stopped.
摘要:
A semiconductor memory device comprises a memory cell array having memory cells arranged at intersections of word lines and bit lines, a first sense amplifier connected to a bit line at a predetermined position of the bit lines, a second sense amplifier connected to a bit line adjacent to the bit line at the predetermined position, a supplying circuit for supplying a predetermined voltage to each bit line connected to the first or second sense amplifier, and a sense amplifier control circuit capable of controlling the first and second sense amplifiers independently. In the semiconductor memory device, the sense amplifier control circuit performs a control in which an operation of either of the first and second sense amplifiers is stopped, the predetermined voltage is supplied to the bit line connected to the stopped sense amplifier, and the other of the first and second sense amplifiers is operated.
摘要:
Disclosed herein is a surface treatment method of a titanium material for electrodes characterized by including: a titanium oxide layer formation step S1 of forming a titanium oxide layer with a thickness of 10 nm or more and 80 nm or less on the surface of a titanium material including pure titanium or a titanium alloy; a noble metal layer formation step S2 of forming a noble metal layer with a thickness of 2 nm or more including at least one noble metal selected from Au, Pt, and Pd on the titanium oxide layer by a PVD method; and a heat treatment step S3 of heat treating the titanium material having the noble metal layer formed thereon at a temperature of 300° C. or more and 800° C. or less.
摘要:
Any packet loss is detected very quickly by means of only a series of sequence number in a multi-path environment where a transmitter and a receiver are connected to each other by way of a plurality of networks when no inversion of sequence arises in any of the networks. A communication apparatus includes a plurality of sequence buffers arranged at each network to accumulate packets until a sequence acknowledgement and an absence detecting section adapted to determine the occurrence of an absence of a packet when one or more packets are accumulated in all the sequence buffers. With this arrangement, the absence detecting section of the receiver monitors the packets staying in the sequence guaranteeing buffer arranged in each of the network, paying attention to the characteristic that packets are stored in the sequence buffers of all the networks when a packet loss takes place.
摘要:
A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.