公开(公告)号：US07250320B2

公开(公告)日：2007-07-31

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20060169997A1

公开(公告)日：2006-08-03

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

公开(公告)号：US20050145865A1

公开(公告)日：2005-07-07

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： C23C16/34 ,  C02F1/24 ,  H01L21/28 ,  H01L33/08 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07564064B2

公开(公告)日：2009-07-21

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US20060170001A1

公开(公告)日：2006-08-03

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光器件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

公开(公告)号：US07468528B2

公开(公告)日：2008-12-23

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

公开(公告)号：US20070187704A1

公开(公告)日：2007-08-16

申请号：US11691299

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 半导体发光元件，制造方法。 提供集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底，通过不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07956380B2

公开(公告)日：2011-06-07

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光元件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2）的位错半导体层 ），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

公开(公告)号：US07700959B2

公开(公告)日：2010-04-20

申请号：US11568427

申请日：2005-03-31

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L29/15 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296 ,  H01L29/201 ,  H01L29/205 ,  H01L29/227

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： A semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer is provided. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

摘要翻译： 提供一种半导体发光器件，其能够通过使用形成在电极侧的高反射金属层，并能够防止原子从高反射率金属层迁移而获得高的光反射率。 相反导电类型的半导体层形成在有源层的相对侧上，欧姆接触层是用于减小接触电阻的薄膜，透明导电层和用于反射的高反射金属层 在有源层中产生的光依次层叠在一个半导体层上。 由于透明导电层也用作阻挡层并且透射光，因此可以通过高反射率金属层的反射获得高的光取出效率。

公开(公告)号：US20080121904A1

公开(公告)日：2008-05-29

申请号：US11568427

申请日：2005-03-31

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L21/329 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： There is obtained a semiconductor light-emitting device capable of obtaining a high light reflectance through the use of a high-reflection metal layer formed on the side of an electrode on one side and capable of preventing migration of atoms from the high-reflectance metal layer. Semiconductor layers of the opposite conduction types are formed on the opposite sides of an active layer, and an ohmic contact layer being a thin film for contriving a decrease in contact resistance, a transparent and conductive layer, and a high-reflection metal layer for reflecting light generated in the active layer are sequentially layered on one of the semiconductor layers. Since the transparent conductive layer functions also as a barrier layer and it transmits light, a high light take-out efficiency can be obtained through the reflection at the high-reflectance metal layer.

摘要翻译： 通过使用在一侧形成的电极侧形成的能够防止原子从高反射率金属层迁移的高反射金属层，能够得到高反射率的半导体发光元件 。 相反导电类型的半导体层形成在有源层的相对侧上，欧姆接触层是用于减小接触电阻的薄膜，透明导电层和用于反射的高反射金属层 在有源层中产生的光依次层叠在一个半导体层上。 由于透明导电层也用作阻挡层并且透射光，因此可以通过高反射率金属层的反射获得高的光取出效率。