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公开(公告)号：US20100162012A1
公开(公告)日：2010-06-24
申请号：US12716153
申请日：2010-03-02
CPC分类号： G06F1/26 , Y10T307/406
摘要： Apparatus and associated systems, methods and computer program products relate to using information stored in a flash memory to adjust the operating voltage supplied to the flash memory. The voltage information indicates a minimum operating voltage at which to operate the flash memory device. In general, operating a flash memory device near a minimal operating voltage may substantially minimize power consumption. The minimum operating voltage for individual flash memory devices may vary from IC to IC, by manufacturing lot, and by manufacturer. In a product, the minimum operating voltage for a particular flash memory may be determined, for example, by a controller built-in to a flash memory reporting (automatically or in response to a query) the minimum operating voltage (e.g., 2.5 V, 3.15 V) to a memory controller or microprocessor. The stored voltage information may further include information to adjust the operating voltage based on temperature.
摘要翻译： 装置和相关系统，方法和计算机程序产品涉及使用存储在闪速存储器中的信息来调节提供给闪存的工作电压。 电压信息表示操作闪速存储器件的最小工作电压。 通常，在最小工作电压附近操作闪速存储器件可能基本上最小化功耗。 单个闪存设备的最小工作电压可能因IC到IC，制造批次和制造商而异。 在产品中，特定闪速存储器的最小工作电压可以例如由内置于闪存的控制器（自动或响应于查询）报告最小工作电压（例如，2.5V， 3.15 V）连接到存储器控制器或微处理器。 存储的电压信息还可以包括基于温度来调节工作电压的信息。
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公开(公告)号：US07702935B2
公开(公告)日：2010-04-20
申请号：US11339750
申请日：2006-01-25
CPC分类号： G06F1/26 , Y10T307/406
摘要： Apparatus and associated systems, methods and computer program products relate to using information stored in a flash memory to adjust the operating voltage supplied to the flash memory. The voltage information indicates a minimum operating voltage at which to operate the flash memory device. In general, operating a flash memory device near a minimal operating voltage may substantially minimize power consumption. The minimum operating voltage for individual flash memory devices may vary from IC to IC, by manufacturing lot, and by manufacturer. In a product, the minimum operating voltage for a particular flash memory may be determined, for example, by a controller built-in to a flash memory reporting (automatically or in response to a query) the minimum operating voltage (e.g., 2.5 V, 3.15 V) to a memory controller or microprocessor. The stored voltage information may further include information to adjust the operating voltage based on temperature.
摘要翻译： 装置和相关系统，方法和计算机程序产品涉及使用存储在闪速存储器中的信息来调节提供给闪存的工作电压。 电压信息表示操作闪速存储器件的最小工作电压。 通常，在最小工作电压附近操作闪速存储器件可能基本上最小化功耗。 单个闪存设备的最小工作电压可能因IC到IC，制造批次和制造商而异。 在产品中，特定闪速存储器的最小工作电压可以例如由内置于闪存的控制器（自动或响应于查询）报告最小工作电压（例如，2.5V， 3.15 V）连接到存储器控制器或微处理器。 存储的电压信息还可以包括基于温度来调节工作电压的信息。
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公开(公告)号：US20100070798A1
公开(公告)日：2010-03-18
申请号：US12624020
申请日：2009-11-23
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642 , G11C16/30 , G11C16/3418 , G11C16/3431 , G11C16/349 , G11C29/00 , G11C2211/5641
摘要： Systems and methods, including computer software, for reading data from a flash memory cell involve detecting voltages from a group of memory cells. The group of memory cells have associated metadata for error detection, and each memory cell stores a voltage representing a data value selected from a plurality of possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages. Alternative data values for the memory cells having the uncertain data values are determined. A combination of alternative data values is selected, and an error detection test is performed using the metadata associated with the memory cells and the selected combination of alternative data values.
摘要翻译： 包括用于从闪存单元读取数据的计算机软件的系统和方法涉及检测来自一组存储器单元的电压。 存储器单元组具有用于错误检测的相关联的元数据，并且每个存储器单元存储表示从多个可能数据值中选择的数据值的电压。 每个可能的数据值对应于模拟电压的多个非重叠范围的一个范围。 基于检测到的电压来识别具有不确定数据值的存储单元。 确定具有不确定数据值的存储单元的替代数据值。 选择替代数据值的组合，并且使用与存储器单元相关联的元数据和所选择的备选数据值的组合来执行错误检测测试。
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公开(公告)号：US20100002512A1
公开(公告)日：2010-01-07
申请号：US12559341
申请日：2009-09-14
CPC分类号： G11C29/883 , G11C16/04 , G11C29/83 , G11C29/88 , H01L2924/0002 , H01L2924/00
摘要： Articles and associated methods and systems relate to disabling defective flash memory dies in a device containing multiple flash memory dies. Packages containing multiple flash memory dies may be labeled to indicate a flash memory data storage capacity based on the flash memory dies that are not disabled. Various disabling methods may be applied at the die level, package level, and/or board level.
摘要翻译： 文章和相关的方法和系统涉及在包含多个闪存芯片的设备中禁用有缺陷的闪存芯片。 包含多个闪存芯片的软件包可能被标记为基于未被禁用的闪存存储器模块来指示闪存数据存储容量。 可以在管芯级，封装级和/或板级应用各种禁用方法。
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公开(公告)号：US20090323418A1
公开(公告)日：2009-12-31
申请号：US12489618
申请日：2009-06-23
CPC分类号： G11C29/52 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C29/00 , G11C2211/5641
摘要： A system and method, including computer software, allows reading data from a flash memory cell. Voltages from a group of memory cells are detected. The group of memory cells have associated metadata for error detection, and each memory cell stores a voltage representing a data value selected from multiple possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages. Alternative data values for the memory cells having the uncertain data values are determined, and a combination of alternative data values is selected. An error detection test is performed using the metadata associated with the multiple memory cells and the selected combination of alternative data values.
摘要翻译： 包括计算机软件的系统和方法允许从闪存单元读取数据。 检测来自一组存储器单元的电压。 该组存储器单元具有用于错误检测的相关联的元数据，并且每个存储器单元存储表示从多个可能数据值中选择的数据值的电压。 每个可能的数据值对应于模拟电压的多个非重叠范围的一个范围。 基于检测到的电压来识别具有不确定数据值的存储单元。 确定具有不确定数据值的存储单元的替代数据值，并选择备选数据值的组合。 使用与多个存储器单元相关联的元数据和所选择的备选数据值的组合来执行错误检测测试。
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公开(公告)号：US07639542B2
公开(公告)日：2009-12-29
申请号：US11694739
申请日：2007-03-30
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642 , G11C16/30 , G11C16/3418 , G11C16/3431 , G11C16/349 , G11C29/00 , G11C2211/5641
摘要： Systems and methods, including computer software, for reading data from a flash memory cell involve detecting voltages from a group of memory cells. The group of memory cells have associated metadata for error detection, and each memory cell stores a voltage representing a data value selected from a plurality of possible data values. Each possible data value corresponds to one range of multiple non-overlapping ranges of analog voltages. Memory cells having uncertain data values are identified based on the detected voltages. Alternative data values for the memory cells having the uncertain data values are determined. A combination of alternative data values is selected, and an error detection test is performed using the metadata associated with the memory cells and the selected combination of alternative data values.
摘要翻译： 包括用于从闪存单元读取数据的计算机软件的系统和方法涉及检测来自一组存储器单元的电压。 存储器单元组具有用于错误检测的相关联的元数据，并且每个存储器单元存储表示从多个可能数据值中选择的数据值的电压。 每个可能的数据值对应于模拟电压的多个非重叠范围的一个范围。 基于检测到的电压来识别具有不确定数据值的存储单元。 确定具有不确定数据值的存储单元的替代数据值。 选择替代数据值的组合，并且使用与存储器单元相关联的元数据和所选择的备选数据值的组合来执行错误检测测试。
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公开(公告)号：US20090237994A1
公开(公告)日：2009-09-24
申请号：US12469604
申请日：2009-05-20
CPC分类号： G11C11/5628 , G11C2211/5621
摘要： Systems and methods, including computer software for writing to a memory device include applying charge to each of multiple memory cells for storage of a selected data value in each memory cell. The memory cells include a first reference memory cell, and each data value is selected from a group of possible data values. Each possible data value has a corresponding target voltage level, and the first reference memory cell has a corresponding predetermined first reference target voltage level. The voltage level in the first reference memory cell is detected. A determination is made whether the voltage level in the first reference memory cell is less than the first reference target voltage level. Additional charge is applied to the memory cells upon the determination that the voltage level in the first reference memory cell is less than the first reference target voltage.
摘要翻译： 包括用于写入存储器设备的计算机软件的系统和方法包括向多个存储器单元中的每一个应用电荷以存储每个存储器单元中的选定数据值。 存储器单元包括第一参考存储单元，并且从一组可能的数据值中选择每个数据值。 每个可能的数据值具有相应的目标电压电平，并且第一参考存储器单元具有对应的预定的第一参考目标电压电平。 检测第一参考存储单元中的电压电平。 确定第一参考存储单元中的电压电平是否小于第一参考目标电压电平。 在确定第一参考存储单元中的电压电平小于第一参考目标电压时，向存储器单元施加附加电荷。
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公开(公告)号：US20090147570A1
公开(公告)日：2009-06-11
申请号：US12371164
申请日：2009-02-13
CPC分类号： G11C7/16 , G11C11/5642 , G11C27/005
摘要： A system and method, including computer software, for storing digital information uses multiple NAND flash memory cells. Each memory cell is adapted to receive charge during a write operation to an analog voltage that corresponds to a data value having a binary representation of more than 4 bits. An analog-to-digital converter converts the analog voltage from each memory cell into a digital representation of the analog voltage during a read operation of each cell.
摘要翻译： 包括用于存储数字信息的计算机软件的系统和方法使用多个NAND闪存单元。 每个存储单元适于在写入操作期间接收对应于具有大于4位的二进制表示的数据值的模拟电压的电荷。 在每个单元的读取操作期间，模数转换器将来自每个存储单元的模拟电压转换为模拟电压的数字表示。
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公开(公告)号：US20080229085A1
公开(公告)日：2008-09-18
申请号：US11686097
申请日：2007-03-14
IPC分类号： G06F9/00
CPC分类号： G06F9/441 , G06F9/30032 , G06F9/3877 , G06F12/0246
摘要： Systems, methods, and computer software for operating a device can be used to operate the device in multiple modes. The device can be operated in a first operating mode adapted for processing data, in which a first processor executes a driver for a nonvolatile memory and a second processor performs processing of data stored in files on the nonvolatile memory. An instruction can be received to switch the device to a second operating mode adapted for reading and/or writing files from or to the nonvolatile memory. The driver for the nonvolatile memory can be switched from the first processor to the second processor in response to the instruction, and the driver for the nonvolatile memory can be executed on the second processor after performing the switch. A communications driver can be executed on the first processor in response to the instruction to switch the device to the second operating mode.
摘要翻译： 用于操作设备的系统，方法和计算机软件可用于以多种模式操作设备。 该装置可以在适于处理数据的第一操作模式中操作，其中第一处理器执行用于非易失性存储器的驱动器，并且第二处理器执行存储在非易失性存储器上的文件中的数据的处理。 可以接收指令以将设备切换到适于从非易失性存储器读取和/或写入文件的第二操作模式。 用于非易失性存储器的驱动器可以响应于该指令从第一处理器切换到第二处理器，并且可以在执行开关之后在第二处理器上执行用于非易失性存储器的驱动器。 响应于将设备切换到第二操作模式的指令，可以在第一处理器上执行通信驱动器。
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公开(公告)号：US20080065814A1
公开(公告)日：2008-03-13
申请号：US11531197
申请日：2006-09-12
IPC分类号： G06F12/00
CPC分类号： G06F9/4411
摘要： Systems and techniques for accessing a memory, such as a NAND or NOR flash memory, involve storing an operating application for a computing device in a first memory and storing a driver containing software operable to control the first memory in a second memory that is independently accessible from the first memory. By storing the driver in a second memory that is independently accessible from the first memory, changes to the driver and/or the first memory can be made without altering the operating application.
摘要翻译： 用于访问诸如NAND或NOR闪存的存储器的系统和技术涉及将用于计算设备的操作应用存储在第一存储器中并且存储包含可操作以在可独立访问的第二存储器中的第一存储器的软件的驱动器 从第一个记忆。 通过将驱动器存储在可从第一存储器独立访问的第二存储器中，可以在不改变操作应用的情况下对驱动器和/或第一存储器进行改变。
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