LIBRARY ACCURACY ENHANCMENT AND EVALUATION
    82.
    发明申请
    LIBRARY ACCURACY ENHANCMENT AND EVALUATION 失效
    图书馆精确度增强与评估

    公开(公告)号:US20080071504A1

    公开(公告)日:2008-03-20

    申请号:US11946821

    申请日:2007-11-28

    IPC分类号: G06F15/00

    CPC分类号: G01B11/24 G03F7/70625

    摘要: The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least one set of four reflectivity parameters for a wavelength and/or angle of incidence. One of the four reflectivity parameters is selected. A value for the selected reflectivity parameter is determined using the identity relationship and values of the remaining three reflectivity parameters. The determined value for the selected reflectivity parameter is compared to the value in the obtained set of four reflectivity parameters to evaluate and improve the accuracy of the library. The identity relationship can also be used to reduce the data storage in a library.

    摘要翻译: 通过利用模拟衍射信号固有的身份关系来评估用于在晶片上形成的结构的光学计量学中的模拟衍射信号库的精度。 每个模拟衍射信号包含用于波长和/或入射角的至少一组四个反射率参数。 选择四个反射率参数之一。 使用身份关系和剩余的三个反射率参数的值确定所选反射率参数的值。 将所选反射率参数的确定值与获得的四个反射率参数组中的值进行比较,以评估和提高库的准确性。 身份关系也可用于减少库中的数据存储。

    Generating a profile model to characterize a structure to be examined using optical metrology
    83.
    发明申请
    Generating a profile model to characterize a structure to be examined using optical metrology 审中-公开
    使用光学计量产生轮廓模型来表征要检查的结构

    公开(公告)号:US20080013107A1

    公开(公告)日:2008-01-17

    申请号:US11484974

    申请日:2006-07-11

    IPC分类号: G01B11/14

    摘要: In generating a profile model to characterize a structure to be examined using optical metrology, a view canvas is displayed, with the profile model being generated displayed in the view canvas. A profile shape palette is displayed adjacent to the view canvas. A plurality of different profile shape primitives is displayed in the profile shape palette. Each profile shape primitive in the profile shape palette is defined by a set of profile parameters. When a user selects a profile shape primitive from the profile shape palette, drags the selected profile shape primitive from the profile shape palette, and drops the selected profile shape primitive into the view canvas, the selected profile shape primitive is incorporated into the profile model being generated and displayed in the view canvas.

    摘要翻译: 在生成轮廓模型以使用光学计量学来表征要检查的结构时,显示视图画布,其中生成的轮廓模型显示在视图画布中。 在视图画布附近显示一个轮廓形状调色板。 在轮廓形状调色板中显示多个不同的轮廓形状基元。 轮廓形状调色板中的每个轮廓形状基元由一组轮廓参数定义。 当用户从轮廓形状调色板中选择轮廓形状基元时,从轮廓形状调色板中拖动所选择的轮廓形状基元,并将所选择的轮廓形状基元拖放到视图画布中,将所选择的轮廓形状原语合并到轮廓模型中 生成并显示在视图画布中。

    Composition employing a novel human kinase
    84.
    发明授权
    Composition employing a novel human kinase 失效
    使用新的人类激酶的组合物

    公开(公告)号:US07297525B2

    公开(公告)日:2007-11-20

    申请号:US10702496

    申请日:2003-11-07

    IPC分类号: C12N9/12 C12N15/54

    CPC分类号: C12N9/1205

    摘要: This invention provides compositions, organisms and methodologies employing a novel human protein kinase, MCRK1. The novel human kinase has sequence homology to rat myotonic dystrophy kinase-related Cdc42 binding kinase (MRCK) alpha. The gene encoding the novel kinase is localized in locus 11q13 of human chromosome 11. The novel protein kinase comprises multiple functional/structural domains that include a kinase domain, a pkinase_C domain, a DAG-PE binding domain, and a CNH domain. The sequence and structure similarity between the novel human protein and rat MRCK alpha indicates that the novel human protein may function as a downstream effector of Cdc42 in cytoskeleton reorganization.

    摘要翻译: 本发明提供了使用新型人蛋白激酶MCRK1的组合物,生物体和方法。 新型人类激酶与大鼠肌强直性营养不良激酶相关的Cdc42结合激酶(MRCK)α具有序列同源性。 编码新型激酶的基因位于人染色体11的位点11q13中。新型蛋白激酶包含多个功能/结构域,其包括激酶结构域,pkinase_C结构域,DAG-PE结合结构域和CNH结构域。 新型人类蛋白质与大鼠MRCKα之间的序列和结构相似性表明新型人类蛋白质可能在细胞骨架重组中起到Cdc42的下游作用。

    Library accuracy enhancement and evaluation
    85.
    发明申请
    Library accuracy enhancement and evaluation 有权
    图书馆精确度增强和评估

    公开(公告)号:US20070225940A1

    公开(公告)日:2007-09-27

    申请号:US11390798

    申请日:2006-03-27

    IPC分类号: G06F19/00

    CPC分类号: G01B11/24 G03F7/70625

    摘要: The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least one set of four reflectivity parameters for a wavelength and/or angle of incidence. One of the four reflectivity parameters is selected. A value for the selected reflectivity parameter is determined using the identity relationship and values of the remaining three reflectivity parameters. The determined value for the selected reflectivity parameter is compared to the value in the obtained set of four reflectivity parameters to evaluate and improve the accuracy of the library. The identity relationship can also be used to reduce the data storage in a library.

    摘要翻译: 通过利用模拟衍射信号固有的身份关系来评估用于在晶片上形成的结构的光学计量学中的模拟衍射信号库的精度。 每个模拟衍射信号包含用于波长和/或入射角的至少一组四个反射率参数。 选择四个反射率参数之一。 使用身份关系和剩余的三个反射率参数的值确定所选反射率参数的值。 将所选反射率参数的确定值与获得的四个反射率参数组中的值进行比较,以评估和提高库的准确性。 身份关系也可用于减少库中的数据存储。

    Etch methods to form anisotropic features for high aspect ratio applications
    87.
    发明申请
    Etch methods to form anisotropic features for high aspect ratio applications 审中-公开
    蚀刻方法来形成高纵横比应用的各向异性特征

    公开(公告)号:US20070202700A1

    公开(公告)日:2007-08-30

    申请号:US11363789

    申请日:2006-02-27

    IPC分类号: H01L21/302 C23F1/00

    摘要: Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

    摘要翻译: 在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中,通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。 在另一个实施例中,通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。 均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征,而不产生缺陷和/或过蚀刻下面 层。