摘要:
There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.
摘要:
In certain aspects, the disclosure relates to an imaging system, particularly an objective or an illumination device of a microlithography projection-exposure apparatus having an optical axis (OA), with at least one optical element of an optically uniaxial crystal material whose optical crystallographic axis is substantially parallel to the optical axis (OA) of the imaging system and which at a working wavelength has an ordinary refractive index no and an extraordinary refractive index ne, with the extraordinary refractive index ne being smaller than the ordinary refractive index no; wherein the optical element is arranged in the ray path pattern in such a way that, at least for rays of the working wavelength which meet the optical element at an angle that falls within an angular range from the optical axis, the p-polarized component is reflected more strongly than the s-polarized component.
摘要:
A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.
摘要:
The disclosure relates to an optical system of an illumination device of a microlithographic projection exposure apparatus, comprising at least one first light-conductance-increasing element having a plurality of diffractively or refractively beam-deflecting structures extending in a common first preferred direction the light-conductance-increasing element having an optically uniaxial crystal material in such a way that the optical crystal axis of the crystal material is substantially parallel or substantially perpendicular to the first preferred direction.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
摘要:
A reticle-masking (REMA) objective for imaging an object plane onto an image plane has a condenser portion, an intermediate portion, and a field lens portion. The three portions together have no more than 10 lenses with a combined total of no more than five aspheric lens surfaces. Each of the three portions of the REMA objective has one or two aspheric lens surfaces.
摘要:
An illumination system for a projection exposure machine, operating with ultraviolet light, for microlithography has an angle-conserving light mixing device with at least one integrator rod that has an entrance surface for receiving light from a light source, and an exit surface for outputting exit light mixed by the integrator rod. At least one prism arrangement for receiving exit light and for varying the state of polarization of the exit light is placed downstream of the integrator rod. A preferred prism arrangement has a polarization splitter surface, aligned transversely to the direction of propagation of the exit light, which passes light fractions with p-polarization without hindrance, and reflects fractions with s-polarization. The separated beams with orthogonal polarization are parallelized by means of a reflecting surface aligned parallel to the polarization splitter surface, and the same state of polarization is set for both partial beams by means of a suitable retarder.
摘要:
In a method for manufacturing semiconductor devices and other finely structured parts, a projection objective (5) is used in order to project the image of a pattern arranged in the object plane of the projection objective onto a photosensitive substrate which is arranged in the region of the image plane (12) of the projection objective. In this case, there is set between an exit surface (15), assigned to the projection objective, for exposing light and an incoupling surface (11), assigned to the substrate, for exposing light a small finite working distance (16) which is at least temporarily smaller in size and exposure time interval than a maximum extent of an optical near field of the light emerging from the exit surface. As a result, projection objectives with very high numerical apertures in the region of NA>0.8 or more can be rendered useful for contactless projection lithography.
摘要:
A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.