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公开(公告)号:US20170213851A1
公开(公告)日:2017-07-27
申请号:US15381702
申请日:2016-12-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hideaki SHISHIDO , Hiroyuki MIYAKE , Kouhei TOYOTAKA , Makoto KANEYASU
IPC: H01L27/12 , H01L33/62 , G02F1/1362
CPC classification number: H01L27/124 , G02F1/134309 , G02F1/134336 , G02F1/13624 , G02F1/136277 , G02F1/136286 , G02F2201/52 , G09G3/2085 , G09G3/3607 , G09G3/3611 , G09G3/3659 , G09G2300/0465 , G09G2300/08 , H01L27/1255 , H01L27/3211 , H01L27/3213 , H01L27/3216 , H01L27/3218 , H01L27/323 , H01L27/3244 , H01L27/3248 , H01L27/326 , H01L27/3262 , H01L27/3276 , H01L33/62
Abstract: Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected to two gate lines. One of the gate lines is electrically connected to a gate of a transistor included in each of the two subpixels, and the other gate line is electrically connected to a gate of a transistor included in the other subpixel. Display elements of the three subpixels are arranged in the same direction. Three pixel electrodes of the three subpixels are arranged in the same direction.
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公开(公告)号:US20170131607A1
公开(公告)日:2017-05-11
申请号:US15410043
申请日:2017-01-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Hiroyuki MIYAKE , Kouhei TOYOTAKA
IPC: G02F1/1362 , G02F1/1368
CPC classification number: G11C19/28 , G02F1/136277 , G09G3/3677 , G09G2310/0286 , G09G2310/0291 , G09G2310/0297 , H01L27/1225 , H01L29/7869
Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.
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公开(公告)号:US20170039976A1
公开(公告)日:2017-02-09
申请号:US15300000
申请日:2016-10-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Hiroyuki MIYAKE , Kouhei TOYOTAKA
CPC classification number: G09G3/3677 , G09G3/3266 , G09G3/3648 , G09G3/3696 , G09G5/18 , G09G2300/0404 , G09G2300/0413 , G09G2310/0205 , G09G2310/0286 , G09G2310/0291 , G11C19/28 , H03K3/356026
Abstract: Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
Abstract translation: 在像素部分的左侧和右侧设置两个包括移位寄存器和包括单导电型晶体管的解复用器的栅极驱动器。 栅极线在每M行中交替连接到左侧和右侧栅极驱动器。 移位寄存器包括串联连接的k个第一单元电路。 解复用器包括k个第二单位电路,其中每个电路从第一单元电路输入信号,并且连接M个栅极线。 第二单元电路选择在M个栅极线之间输出来自第一单位电路的输入信号的一个或多个布线,并将来自第一单元电路的信号输出到所选择的布线。 由于门信号可以从一级移位寄存器的输出输出到M条栅极线,所以移位寄存器的宽度可以变窄。
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公开(公告)号:US20160336355A1
公开(公告)日:2016-11-17
申请号:US15223079
申请日:2016-07-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Hiroyuki MIYAKE , Hideaki SHISHIDO , Jun KOYAMA , Daisuke MATSUBAYASHI , Keisuke MURAYAMA
IPC: H01L27/12 , G02F1/1343 , G02F1/1362 , H01L29/786 , G02F1/1368
CPC classification number: H01L27/1255 , G02F1/1339 , G02F1/134363 , G02F1/13454 , G02F1/13458 , G02F1/136204 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/3265 , H01L29/7869
Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.
Abstract translation: 提供一种包括电容器的半导体器件,其电容量增加而不降低开口率。 半导体器件包括:晶体管,包括透光半导体膜,电容器,其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜, 绝缘膜。 在电容器中,与晶体管中的透光性半导体膜相同的表面上形成至少含有铟(In)或锌(Zn)的金属氧化物膜作为一个电极,透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。
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公开(公告)号:US20160260396A1
公开(公告)日:2016-09-08
申请号:US15053468
申请日:2016-02-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki MIYAKE , Shunpei YAMAZAKI
CPC classification number: G06F3/0416 , G02F1/134363 , G02F2001/134372 , G06F3/0485 , G06F3/04855 , G09G3/20 , G09G2310/0224 , G09G2320/0626 , G09G2320/066 , G09G2320/0686 , G09G2320/10
Abstract: Eye-friendly display that can reduce eye strain on a user is achieved. A display system includes a display portion, an input portion, and a control portion. The display portion is configured to display an image. The input portion is configured to sense an input from a user and output a signal to the control portion. The control portion is configured to execute a first mode and a second mode. In the first mode executed by the control portion, an image is displayed on the display portion by an interlace method. In the second mode executed by the control portion, an image is displayed on the display portion by a progressive method. The control portion is configured to switch between the first mode and the second mode in accordance with the signal.
Abstract translation: 实现了可以减轻用户眼睛疲劳的眼睛友好的显示。 显示系统包括显示部分,输入部分和控制部分。 显示部被配置为显示图像。 输入部分被配置为感测来自用户的输入并将信号输出到控制部分。 控制部被配置为执行第一模式和第二模式。 在由控制部执行的第一模式中,通过交错方法在显示部分上显示图像。 在由控制部分执行的第二模式中,通过渐进方式在显示部分上显示图像。 控制部分被配置为根据该信号在第一模式和第二模式之间切换。
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公开(公告)号:US20160190576A1
公开(公告)日:2016-06-30
申请号:US14972796
申请日:2015-12-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki MIYAKE , Nobuhiro INOUE , Takuya HIROHASHI , Yuika SATO
IPC: H01M4/485 , H01M10/0525
CPC classification number: H01M4/483 , C01B33/113 , H01M4/131 , H01M10/0525 , Y02E60/122
Abstract: Silicon oxide which is an oxide containing at least silicon, in which part of silicon is replaced by boron, aluminum, or gallium, is provided.
Abstract translation: 提供氧化硅,其是至少含有硅的氧化物,其中硅的一部分被硼,铝或镓代替。
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公开(公告)号:US20160155759A1
公开(公告)日:2016-06-02
申请号:US14946985
申请日:2015-11-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Kenichi OKAZAKI , Hiroshi KANEMURA , Daisuke KUROSAKI , Yukinori SHIMA , Junichi KOEZUKA , Hiroyuki MIYAKE
IPC: H01L27/12 , H01L29/417 , H01L29/786
CPC classification number: H01L29/41733 , H01L27/1225 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: To provide a semiconductor device including a transistor which includes an oxide semiconductor film and has excellent electrical characteristics. A semiconductor device includes a transistor including a first electrode, a first insulating film over the first electrode, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a second electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film. The difference between energy at a conduction band minimum of the first oxide semiconductor film and energy at a conduction band minimum of the second oxide semiconductor film is greater than or equal to 0.2 eV. A rate of change in drain current per unit channel width relative to a drain voltage of 1 V can be less than or equal to 2%.
Abstract translation: 提供包括具有氧化物半导体膜并且具有优异的电特性的晶体管的半导体器件。 半导体器件包括晶体管,其包括第一电极,第一电极上的第一绝缘膜,第一绝缘膜上的氧化物半导体膜,氧化物半导体膜上的第二绝缘膜,以及位于第二绝缘膜上的第二电极。 氧化物半导体膜包括第一氧化物半导体膜和第二氧化物半导体膜。 第一氧化物半导体膜的导带最小值处的能量与第二氧化物半导体膜的导带最小值处的能量之差大于或等于0.2eV。 每单位沟道宽度相对于1V的漏极电压的漏极电流的变化率可以小于或等于2%。
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公开(公告)号:US20160118640A1
公开(公告)日:2016-04-28
申请号:US14921179
申请日:2015-10-23
Applicant: Semiconductor Energy Laboratory Co., LTD.
Inventor: Hiroyuki MIYAKE
CPC classification number: H01M2/26 , G06F1/1613 , G06F1/163 , H01M2/021 , H01M2/1066 , H01M2220/30
Abstract: A power storage unit suitable for a wearable device is provided. A novel power storage unit or power storage device is provided. The power storage unit includes a positive electrode and a negative electrode inside an external body. The positive electrode includes a positive electrode tab portion protruding from the positive electrode in one direction. The negative electrode includes a negative electrode tab portion protruding from the negative electrode in one direction. The power storage unit includes a first lead electrode electrically connected to the positive electrode tab portion and a second lead electrode electrically connected to the negative electrode tab portion. The first lead electrode includes a first fold portion. The second lead electrode includes a second fold portion.
Abstract translation: 提供一种适用于穿戴式装置的蓄电单元。 提供了一种新颖的蓄电单元或蓄电装置。 蓄电部在外部体内具有正极和负极。 正极包括从正极沿一个方向突出的正电极接头部。 负极包括从负极沿一个方向突出的负极接头部。 电力存储单元包括电连接到正极片部分的第一引线电极和与负电极片部分电连接的第二引线电极。 第一引线电极包括第一折叠部分。 第二引线电极包括第二折叠部分。
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公开(公告)号:US20160098120A1
公开(公告)日:2016-04-07
申请号:US14868792
申请日:2015-09-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki MIYAKE
CPC classification number: G06F3/044 , B60K35/00 , B60K37/06 , B60K2350/1024 , B60K2350/925 , G01R27/2605 , G02F1/13338 , G06F1/1626 , G06F1/163 , G06F1/1641 , G06F1/1652 , G06F3/03547 , G06F3/0412 , G06F3/0416 , G06F2203/04102 , G06F2203/04103 , G06F2203/04112 , G09G2320/0209 , H03K17/955
Abstract: An input device or an input/output device that is suitable for increasing in size is provided. An input device or an input/output device that can be driven at high frequencies is provided. An input device includes a plurality of row wirings and a plurality of column wirings. To each of the plurality of row wirings, periodic rectangular waves are applied. When attention is paid to one row wiring Xi (i is greater than or equal to 1 and less than or equal to m−1), a signal that has a phase opposite to that of a signal applied to the row wiring Xi and that is delayed for a given period is applied to a row wiring Xi+1, which is the row wiring next to the row wiring Xi. The width of each of the rectangular waves applied to the row wirings corresponds to a frame period.
Abstract translation: 提供适合于增加尺寸的输入装置或输入/输出装置。 提供可以以高频率驱动的输入装置或输入/输出装置。 输入装置包括多个行布线和多个列布线。 对于多个行布线中的每一个,施加周期性的矩形波。 当注意到一行布线Xi(i大于或等于1且小于或等于m-1)时,具有与施加到行布线Xi的信号的相位相反的相位的信号, 延迟给定周期的行布线Xi + 1被施加到行布线Xi附近的行布线。 施加到行布线的每个矩形波的宽度对应于帧周期。
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公开(公告)号:US20160043359A1
公开(公告)日:2016-02-11
申请号:US14818566
申请日:2015-08-05
Applicant: Semiconductor Energy Laboratory Co., LTD.
Inventor: Hiroyuki MIYAKE
IPC: H01M2/02 , H01M10/0525 , H01M10/48
CPC classification number: H01M2/0237 , H01M2/021 , H01M2/0212 , H01M2/0275 , H01M2220/20 , H01M2220/30
Abstract: Provided is a secondary battery suitable for a portable information terminal or a wearable device, or an electronic device having a novel structure with a variety of forms and a secondary battery that fits the form of the electronic device. The secondary battery is sealed using a film having projections that can reduce stress on the film caused when external force is applied. The film has a pattern of projections formed by pressing (e.g., embossing). A top portion of each of the projections has a region thicker than a bottom portion of each of the projections. The thickness of the top portion of each of the projections is 1.5 or more times, preferably 2 or more times, as large as that of the bottom portion of each of the projections, and is a thickness such that each of the projections has a convex space.
Abstract translation: 提供了适用于便携式信息终端或可佩带装置的二次电池,或具有各种形式的新颖结构的电子装置和适合电子装置形式的二次电池。 使用具有突起的膜来密封二次电池,该突起可以减小施加外力时在膜上的应力。 该膜具有通过压制形成的突起图案(例如,压印)。 每个突起的顶部具有比每个突起的底部更厚的区域。 每个突起的顶部的厚度是每个突起的底部的厚度的1.5倍以上,优选为2倍以上,并且是使得每个突起具有凸起的厚度 空间。
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