公开(公告)号：US08053287B2

公开(公告)日：2011-11-08

申请号：US11537265

申请日：2006-09-29

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

IPC分类号： H01L21/339

CPC分类号： H01L27/14645 ,  H01L27/1464

摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

摘要翻译： 提供制造背面照明传感器的方法。 提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。 在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。 第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。 以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。

公开(公告)号：US08030114B2

公开(公告)日：2011-10-04

申请号：US11733514

申请日：2007-04-10

申请人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

发明人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

摘要翻译： 制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管 。 在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物 并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。

公开(公告)号：US07939903B2

公开(公告)日：2011-05-10

申请号：US12651236

申请日：2009-12-31

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/00 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。

公开(公告)号：US20100243868A1

公开(公告)日：2010-09-30

申请号：US12415580

申请日：2009-03-31

申请人： Han-Chi Liu ,  Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Chun-Chieh Chuang

发明人： Han-Chi Liu ,  Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Chun-Chieh Chuang

IPC分类号： H01L31/0232 ,  B32B37/02

CPC分类号： H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02165

摘要： Provided is an image sensor device. The image sensor device includes a device substrate having a front side and a back side. The device substrate has a radiation-sensing region that can sense radiation that has a corresponding wavelength. The image sensor also includes a first layer formed over the front side of the device substrate. The first layer has a first refractive index and a first thickness that is a function of the first refractive index. The image sensor also has a second layer formed over the first layer. The second layer is different from the first layer and has a second refractive index and a second thickness that is a function of the second refractive index.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的装置基板。 器件衬底具有可以感测具有相应波长的辐射的辐射感测区域。 图像传感器还包括形成在器件衬底的前侧上的第一层。 第一层具有第一折射率和第一折射率的函数的第一厚度。 图像传感器还具有形成在第一层上的第二层。 第二层与第一层不同，具有第二折射率和第二折射率的函数的第二厚度。

公开(公告)号：US20100181283A1

公开(公告)日：2010-07-22

申请号：US12356968

申请日：2009-01-21

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jyh-Ming Hung ,  Pao-Tung Chen

IPC分类号： B44C1/22

CPC分类号： H01L27/14636 ,  H01L24/82 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/14 ,  H01L2924/30105

摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.

摘要翻译： 公开了一种制造具有改进的接合能力的半导体器件的方法。 该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和 第二导电层。

公开(公告)号：US07592199B2

公开(公告)日：2009-09-22

申请号：US12011943

申请日：2008-01-29

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： H01L21/329

CPC分类号： H01L27/14643 ,  H01L27/1463

摘要： A method is provided for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. An N+ region is implanted in a P-type substrate and a P-type well separates the N+ region from the shallow trench isolation (STI) structure. At least a P+ region is formed over the N+ region and overlapping at least part of the P-type well and a substrate portion between the N+ region and P-type well. The space between the N+ region and a damaged region adjacent the STI is greater than the expansion distance of the depletion region between the N+ region and the P-type well. The junctions of the various features are optimized to maximize a photosensitive response for the wavelength of the absorbed light as well as for reducing or eliminating electrical leakage.

摘要翻译： 提供了一种用于减少或消除在其上制造的钉扎光电二极管和浅沟槽隔离结构之间的泄漏，同时优化光电二极管的灵敏度的方法。 将N +区注入P型衬底中，P型阱将N +区与浅沟槽隔离（STI）结构分离。 在N +区域上形成至少一个P +区，并与P型阱的至少一部分和N +区域和P型阱之间的衬底部分重叠。 N +区域与STI附近的损伤区域之间的空间大于N +区域和P型阱之间的耗尽区域的膨胀距离。 各种特征的结点被优化以使吸收光的波长的光敏响应最大化以及减少或消除漏电。

公开(公告)号：US20090020838A1

公开(公告)日：2009-01-22

申请号：US11779122

申请日：2007-07-17

申请人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

发明人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

IPC分类号： H01L31/0232 ,  H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

摘要翻译： 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。

公开(公告)号：US20080191296A1

公开(公告)日：2008-08-14

申请号：US11672681

申请日：2007-02-08

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Shine Chung

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Shine Chung

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14625 ,  H01L27/14687

摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.

摘要翻译： 本公开提供了一种图像传感器半导体器件。 半导体器件包括设置在半导体衬底中的传感器元件; 布置在所述半导体衬底上的级间电介质（ILD）; 以及设置在ILD中的沟槽，覆盖并封闭传感器元件，并且填充有第一介电材料。

公开(公告)号：US20080179640A1

公开(公告)日：2008-07-31

申请号：US11733514

申请日：2007-04-10

申请人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

发明人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

摘要翻译： 制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管 。 在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物 并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。

公开(公告)号：US07348651B2

公开(公告)日：2008-03-25

申请号：US11007935

申请日：2004-12-09

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/1463

摘要： A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-type substrate; a P-type well separating the N+ region from the shallow trench isolation (STI) structure; and at least a P+ region over the N+ region, and overlapping at least part of the P-type well and a substrate portion between the N+ region and P-type well. The space between the N+ region and a damaged region adjacent the STI is greater than the distance that the depletion region between the N+ region and the P-type well, expands. The junctions of the various features are optimized to maximize a photosensitive response for the wavelength of the absorbed light as well as reducing or eliminating electrical leakage.

摘要翻译： 公开了一种用于减少或消除在其上制造的钉扎光电二极管和浅沟槽隔离结构之间的泄漏的方法和系统，同时优化光电二极管的灵敏度。 提供了在P型衬底中注入N +区域的系统; 将N +区域与浅沟槽隔离（STI）结构分离的P型阱; 并且至少在N +区域上的P +区域，并且与P型阱的至少一部分和N +区域和P型阱之间的衬底部分重叠。 N +区域和与STI相邻的损伤区域之间的空间大于N +区域和P型阱之间的耗尽区域的扩展。 各种特征的结点被优化以最大化吸收光的波长的光敏响应以及减少或消除漏电。