公开(公告)号：USD671801S1

公开(公告)日：2012-12-04

申请号：US29414235

申请日：2012-02-27

申请人： Wei He ,  Xin Quan Ho ,  William C. Godley

设计人： Wei He ,  Xin Quan Ho ,  William C. Godley

公开(公告)号：US08318565B2

公开(公告)日：2012-11-27

申请号：US12721608

申请日：2010-03-11

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US08199884B2

公开(公告)日：2012-06-12

申请号：US12762693

申请日：2010-04-19

申请人： Sun Junjie ,  Zhang Jingjing ,  Wei He

发明人： Sun Junjie ,  Zhang Jingjing ,  Wei He

IPC分类号： G21K1/04

CPC分类号： G21K1/04 ,  G21K1/046 ,  G21K2201/067

摘要： According to one embodiment, a slit mechanism apparatus includes, two slit plates configured to adjust a thickness of X-rays, two slit link bars which are pivotally supported on two ends of each of the two slit plates to interlock the two slit plates, two shafts on which the two slit link bars are respectively mounted to rotate the two slit link bars, two shutter plates configured to block/pass the X-rays, and two shutter link bars which are pivotally supported on two ends of each of the two shutter plates to interlock the two shutter plates and are mounted on the two shafts together with the two slit link bars.

摘要翻译： 根据一个实施例，狭缝机构装置包括：两个狭缝板，其被配置为调节X射线的厚度;两个狭缝连杆，其被枢转地支撑在两个狭缝板中的每一个的两端以互锁两个狭缝板;两个 分别安装有两个狭缝连杆杆的轴以旋转两个狭缝连杆，配置成阻挡/通过X射线的两个挡板以及枢转地支撑在两个挡板中的每一个的两个端部上的两个挡板连杆 板以互锁两个快门板，并与两个狭缝连杆一起安装在两个轴上。

公开(公告)号：US20110221012A1

公开(公告)日：2011-09-15

申请号：US12721608

申请日：2010-03-11

申请人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

发明人： Huiming Bu ,  Michael P. Chudzik ,  Wei He ,  William K. Henson ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Naim Moumen ,  Wesley C. Natzle

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/78 ,  H01L21/28088 ,  H01L21/2822 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66575

摘要： Methods for fabricating gate electrode/high-k dielectric gate structures having an improved resistance to the growth of silicon dioxide (oxide) at the dielectric/silicon-based substrate interface. In an embodiment, a method of forming a transistor gate structure comprises: incorporating nitrogen into a silicon-based substrate proximate a surface of the substrate; depositing a high-k gate dielectric across the silicon-based substrate; and depositing a gate electrode across the high-k dielectric to form the gate structure. In one embodiment, the gate electrode comprises titanium nitride rich in titanium for inhibiting diffusion of oxygen.

摘要翻译： 用于制造栅电极/高k电介质栅极结构的方法，其具有改善的耐电介质/硅基衬底界面处二氧化硅（氧化物）生长的能力。 在一个实施例中，形成晶体管栅极结构的方法包括：将氮掺入靠近衬底表面的硅基衬底中; 在所述硅基衬底上沉积高k栅极电介质; 以及在高k电介质上沉积栅电极以形成栅极结构。 在一个实施例中，栅电极包含富含钛的氮化钛以抑制氧的扩散。

公开(公告)号：US20090269926A1

公开(公告)日：2009-10-29

申请号：US12110594

申请日：2008-04-28

申请人： Abhishek Dube ,  Ashima B. Chakravarti ,  Anthony I. Chou ,  Wei He ,  Dominic J. Schepis

发明人： Abhishek Dube ,  Ashima B. Chakravarti ,  Anthony I. Chou ,  Wei He ,  Dominic J. Schepis

IPC分类号： H01L21/44

CPC分类号： H01L21/28035 ,  H01L29/4925

摘要： A method of forming at least one gate conductor of a complementary metal oxide semiconductor performs a chemical vapor deposition process of polysilicon over a surface where a polysilicon gate is to be located. This deposition can be performed through a mask to form gate structures directly, or a later patterning process can pattern the polysilicon into gate structures. During the chemical vapor deposition process, the method adds impurities in the chemical vapor deposition process to optimize the grain size of the polysilicon according to a number of different methods.

摘要翻译： 形成互补金属氧化物半导体的至少一个栅极导体的方法在多晶硅栅极位于的表面上进行多晶硅的化学气相沉积处理。 该沉积可以通过掩模进行直接形成栅极结构，或者后来的图案化工艺可以将多晶硅图案化成栅极结构。 在化学气相沉积过程中，该方法根据多种不同的方法在化学气相沉积工艺中添加杂质以优化多晶硅的晶粒尺寸。

公开(公告)号：US20090249312A1

公开(公告)日：2009-10-01

申请号：US11721682

申请日：2006-06-09

申请人： Yongkun Liao ,  Junhua Luo ,  Wei He

发明人： Yongkun Liao ,  Junhua Luo ,  Wei He

IPC分类号： G06F9/45 ,  H04L29/02

CPC分类号： G06F8/41 ,  H04M7/0012

摘要： An approach for process generation for computer telephony integration (CTI) of an integrated telecom platform, including the following steps. Step 1: The process input module receives the flow chart input by a user and saves it as a flow chart record file; Step 2: the process coversion module coverts the flow chart record file into the equivalent source codes and saves them as a flow chart coversion output file; Step 3: the process compilation module compiles the flow chart coversion output file and saves it as a flow chart compilation output file. The invention also announces a process generation system for an integrated telecom platform, including the process input module, the process coversion module and the process compilation module. The invention is an ideal system for various CTI applications, allowing easy and fast subsequent development as well as convenient system upgrade and maintenance.

摘要翻译： 一种集成电信平台的计算机电话集成（CTI）过程生成方法，包括以下步骤。 步骤1：进程输入模块接收用户输入的流程图，并将其保存为流程图记录文件; 步骤2：流程转换模块将流程图记录文件覆盖到等效的源代码中，并将它们保存为流程图转换输出文件; 步骤3：进程编译模块编译流程图转换输出文件，并将其保存为流程图编译输出文件。 本发明还公布了一种用于集成电信平台的过程生成系统，包括过程输入模块，过程转换模块和过程编译模块。 本发明是各种CTI应用的理想系统，可以方便快捷的后续开发，方便系统升级和维护。

公开(公告)号：US20090240394A1

公开(公告)日：2009-09-24

申请号：US11793326

申请日：2005-12-20

申请人： Dake He ,  Wei He ,  Yu Zheng

发明人： Dake He ,  Wei He ,  Yu Zheng

IPC分类号： G06F19/00

CPC分类号： H04N5/76 ,  B60R2300/106 ,  B60R2300/302 ,  B60R2300/406 ,  B60R2300/8053 ,  B60W2050/0089 ,  G07C5/0841 ,  H04N5/765 ,  H04N5/77 ,  H04N5/907 ,  H04N9/8205

摘要： A recording device for monitoring and recording the driver's operations and the peripheral scene of a motor vehicle, comprising information acquisition units and a central processing unit. The information acquisition units capture information such as image data, while the central processing unit stores and process the information captured by the information acquisition units. The device can record the driver's operations and the peripheral scene of the motor vehicle when an accident happens. The recorded information can be used for analyzing the accident.

摘要翻译： 一种记录装置，用于监视和记录驾驶员的操作和机动车辆的周边场景，包括信息获取单元和中央处理单元。 信息获取单元捕获诸如图像数据的信息，而中央处理单元存储和处理由信息获取单元捕获的信息。 当事故发生时，该设备可以记录驾驶员的操作和机动车辆的周边场景。 记录的信息可用于分析事故。

公开(公告)号：US20060211863A1

公开(公告)日：2006-09-21

申请号：US11368564

申请日：2006-03-06

申请人： Chaozhong Cai ,  Wei He

发明人： Chaozhong Cai ,  Wei He

IPC分类号： C07D217/12 ,  C07D277/56 ,  C07D263/34 ,  C07D239/02 ,  C07D233/61 ,  C07D241/36 ,  C07D241/02

CPC分类号： C07D233/64 ,  C07D233/61 ,  C07D401/04

摘要： The present invention is directed to novel processes for the preparation of opioid modulators (agonists and antagonists) and intermediates in their synthesis. The opioid modulators are useful for the treatment and prevention of as pain and gastrointestinal disorders.

公开(公告)号：US20050026226A1

公开(公告)日：2005-02-03

申请号：US10932269

申请日：2004-09-02

申请人： Peter Hudson ,  Wei He ,  Steven Ruben

发明人： Peter Hudson ,  Wei He ,  Steven Ruben

IPC分类号： C12N15/09 ,  A61K38/00 ,  A61K38/46 ,  A61K48/00 ,  A61P39/00 ,  A61P43/00 ,  C07K14/47 ,  C07K16/18 ,  C07K16/40 ,  C12N1/21 ,  C12N5/06 ,  C12N5/10 ,  C12N9/16 ,  C12N9/18 ,  C12N15/12 ,  C12N15/55 ,  C12P21/02 ,  C12P21/04 ,  G01N33/53 ,  G01N33/567

CPC分类号： C12N9/16 ,  A61K38/00 ,  A61K48/00 ,  C12N9/18 ,  Y10S530/809

摘要： Human serum paraoxonase enzyme and DNA (RNA) encoding such serum paraoxonase enzymes are disclosed. Also provided is the procedure for producing such polypeptides by recombinant techniques. Uses of such polypeptides include their use as an antidote for organophosphate poisoning and to prevent neuronal cell death.

摘要翻译： 公开了人血清对氧磷酶和编码这种血清对氧磷酶的DNA（RNA）。 还提供了通过重组技术生产此类多肽的方法。 这些多肽的用途包括它们作为有机磷酸盐中毒的解毒剂和防止神经元细胞死亡的用途。

公开(公告)号：US06528526B1

公开(公告)日：2003-03-04

申请号：US09675746

申请日：2000-09-29

申请人： Michael R. Myers ,  Wei He ,  Alfred P. Spada ,  Martin P. Maguire

发明人： Michael R. Myers ,  Wei He ,  Alfred P. Spada ,  Martin P. Maguire

IPC分类号： A61K3133

CPC分类号： C07D215/38 ,  C07D215/20 ,  C07D241/42 ,  C07D241/44 ,  C07D241/52 ,  C07D241/54 ,  C07D403/04 ,  C07D405/12 ,  C07D453/06

摘要： This invention is directed to quinoline/quinoxaline compounds which inhibit platelet-derived growth factor or p56lck tyrosine kinase activity, to pharmaceutical compositions comprising these compounds, and to the use of these compounds for treating a patient suffering from or subject to disorders/conditions involving cellular differentiation, proliferation, extracellular matrix production or mediator release and/or T cell activation and proliferation.