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公开(公告)号:US20190267542A1
公开(公告)日:2019-08-29
申请号:US16282884
申请日:2019-02-22
Applicant: TDK CORPORATION
Inventor: Eiji KOMURA , Yohei SHIOKAWA
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit-torque wiring which extends in a first direction; and a first ferromagnetic layer which is laminated in a second direction intersecting the spin-orbit-torque wiring, wherein the spin-orbit-torque wiring includes a convex portion which protrudes in the second direction in relation to a first surface on the side of the first ferromagnetic layer at a connecting part between the spin-orbit-torque wiring and the first ferromagnetic layer.
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公开(公告)号:US20190206602A1
公开(公告)日:2019-07-04
申请号:US16222037
申请日:2018-12-17
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H01F10/329 , G01R33/093 , G01R33/098 , G11C11/161 , H01L43/04 , H01L43/06 , H01L43/14
Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.
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83.
公开(公告)号:US20190131517A1
公开(公告)日:2019-05-02
申请号:US16091240
申请日:2018-01-26
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: A spin current magnetization rotating element of the present disclosure includes a first ferromagnetic metal layer and a spin-orbit torque wiring, in which the spin-orbit torque wiring has a structure in which spin conduction layers and interface spin generation layers are alternately laminated, and one of the spin conduction layers is in closest proximity to the first ferromagnetic metal layer.
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84.
公开(公告)号:US20190057732A1
公开(公告)日:2019-02-21
申请号:US16080848
申请日:2018-01-26
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: A spin current magnetization rotational element includes: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring. The spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, the number of a plurality of the interfacial spin generation layers is two or greater, and in the spin-orbit torque wiring, one of the plurality of interfacial spin generation layers is closest to the first ferromagnetic metal layer.
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公开(公告)号:US20180123024A1
公开(公告)日:2018-05-03
申请号:US15702290
申请日:2017-09-12
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H01L43/065 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/228 , H01L43/04 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A spin-orbit torque type magnetoresistance effect element including a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer; wherein the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction.
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公开(公告)号:US20180123022A1
公开(公告)日:2018-05-03
申请号:US15711506
申请日:2017-09-21
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA , Atsushi TSUMITA
CPC classification number: H01L43/04 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L43/08 , H01L43/10 , H01L43/14
Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.
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87.
公开(公告)号:US20180123021A1
公开(公告)日:2018-05-03
申请号:US15705991
申请日:2017-09-15
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A spin-orbit torque type magnetization reversal element including a ferromagnetic metal layer with a varying magnetization direction; and spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the ferromagnetic metal layer and that is joined to the ferromagnetic metal layer; wherein when viewed from the first direction, the spin-orbit torque wiring is asymmetrical in a second direction that is orthogonal to the first direction and the stacking direction, with respect to an axis that passes through a center, in the second direction, of the ferromagnetic metal layer.
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