MAGNETIC MEMORY
    86.
    发明申请
    MAGNETIC MEMORY 审中-公开

    公开(公告)号:US20180123022A1

    公开(公告)日:2018-05-03

    申请号:US15711506

    申请日:2017-09-21

    Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

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