公开(公告)号：US07269463B2

公开(公告)日：2007-09-11

申请号：US10682554

申请日：2003-10-10

申请人： Hideki Nagatsuka ,  Junichi Suzuki

发明人： Hideki Nagatsuka ,  Junichi Suzuki

IPC分类号： G05B11/01 ,  G05B15/00 ,  G05B23/02 ,  G06F13/42 ,  G06F11/00 ,  G06F15/00 ,  H03F1/26

CPC分类号： G05B19/042 ,  G05B23/0267 ,  G05B2219/23043

摘要： In a CRT operation system for operation and monitoring of plant equipment in a plant worksite through a central control room and a network, an operation control personal computer is provided for monitoring and operating the plant equipment, and one or more wireless LAN transceivers or transmitting/receiving sections are provided to appropriate points in a patrol route around the plant equipment, for wireless communication with the operation control personal computer. The personal computer controls the plant equipment through a wireless transceiver and a network, and transmits therethrough information signals of on-site operation of the plant equipment to enable a display device and a sound/voice output device provided in the central control room.

摘要翻译： 在用于通过中央控制室和网络对工厂设备中的工厂设备进行操作和监视的CRT操作系统中，提供操作控制个人计算机用于监视和操作工厂设备，以及一个或多个无线LAN收发器或发送/ 接收部分被提供到工厂设备周围的巡逻路线中的适当点，用于与操作控制个人计算机的无线通信。 个人计算机通过无线收发器和网络来控制工厂设备，并通过其中的工厂设备的现场操作的信息信号进行传输，以使得能够在中央控制室中提供的显示设备和声音/语音输出设备。

公开(公告)号：US20060199731A1

公开(公告)日：2006-09-07

申请号：US10546776

申请日：2003-02-25

申请人： Naomi Noda ,  Shigekazu Takagi ,  Junichi Suzuki

发明人： Naomi Noda ,  Shigekazu Takagi ,  Junichi Suzuki

IPC分类号： B01J23/58

CPC分类号： B01J23/58 ,  B01D53/9422 ,  B01D2255/1021 ,  B01D2255/1023 ,  B01D2255/1025 ,  B01D2255/2022 ,  B01D2255/2025 ,  B01D2255/2027 ,  B01D2255/91 ,  B01D2255/9205 ,  B01J23/02 ,  B01J23/04 ,  B01J35/04 ,  B01J35/10 ,  B01J37/0215 ,  B01J37/0248 ,  F01N3/0814

摘要： A catalyst body includes a catalytic layer containing an alkali metal and/or an alkaline earth metal and a carrier carrying the catalytic layer, characterized in that the carrier has a porosity of 40% or below. According to this catalyst body, the invasion of the alkali metal and/or the alkaline earth metal contained in the catalytic layer into the inside of the carrier is inhibited and thus the carrier can sustain the strength and NOx absorptivity required as a carrier over a long period of time even upon exposure to a high temperature.

摘要翻译： 催化剂体包括含有碱金属和/或碱土金属的催化剂层和承载催化剂层的载体，其特征在于载体的孔隙率为40％以下。 根据该催化剂体，催化剂层中含有的碱金属和/或碱土金属向载体内部的侵入被抑制，因此载体能够维持强度和NO x 即使暴露在高温下，长时间作为载体所需的吸收率。

公开(公告)号：US20060153750A1

公开(公告)日：2006-07-13

申请号：US10561841

申请日：2004-06-25

申请人： Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Takeshi Sakuma ,  Tatsuhiko Hatano ,  Yoshihiro Sato ,  Junichi Suzuki

发明人： Yukio Miyairi ,  Yasumasa Fujioka ,  Masaaki Masuda ,  Takeshi Sakuma ,  Tatsuhiko Hatano ,  Yoshihiro Sato ,  Junichi Suzuki

IPC分类号： B01J19/08

CPC分类号： F01N3/0892 ,  B01D53/32 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0835 ,  B01J2219/0875 ,  B01J2219/0894 ,  B01J2219/2453 ,  B01J2219/2487 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2437

摘要： A plasma generating electrode of the present invention includes a pair of unit electrodes 2, each of the pair of unit electrodes 2 including a plate-like ceramic body 19 and a conductive film 12 disposed inside the ceramic body 19 and including a plurality of protrusions 13 on a front surface, the pair of unit electrodes 2 constituting a basic unit 1 by being hierarchically layered at intervals corresponding to thickness of the protrusion 13 in a state that a plurality of spaces which are open on each end in the arrangement direction of the protrusion are formed, the basic units 1 constituting an electrode unit in which the basic units 1 are hierarchically layered at intervals corresponding to the thickness of the protrusion 13, and the plasma generating electrode being capable of generating plasma in the three-dimensionally arranged spaces V upon application of voltage between the unit electrodes 2 constituting the electrode unit. Therefore, the plasma generating electrode is capable of generating uniform and stable plasma and exhibiting excellent heat resistance.

摘要翻译： 本发明的等离子体产生电极包括一对单位电极2，每对单元电极2包括板状陶瓷体19和布置在陶瓷体19内部的导电膜12，并且包括多个突起13 在前表面上，构成基本单元1的一对单元电极2通过以与突起13的厚度相对应的间隔对应于在突起的排列方向上的每个端部开口的多个空间的状态而分层地层叠 构成电极单元的基本单元1，其中基本单元1以对应于突起13的厚度的间隔分层地层叠，并且等离子体产生电极能够在三维布置的空间V中产生等离子体 在构成电极单元的单位电极2之间施加电压。 因此，等离子体产生电极能够产生均匀且稳定的等离子体并且表现出优异的耐热性。

公开(公告)号：US20060146975A1

公开(公告)日：2006-07-06

申请号：US11296438

申请日：2005-12-08

申请人： Masato Okamura ,  Tetsuo Oosato ,  Seiji Yamamoto ,  Tadasu Yotsuyanagi ,  Nagayoshi Ichikawa ,  Kenji Yamazaki ,  Junichi Takagi ,  Hidehiro Urata ,  Shunichi Suzuki ,  Kenro Takamori ,  Junichi Suzuki

发明人： Masato Okamura ,  Tetsuo Oosato ,  Seiji Yamamoto ,  Tadasu Yotsuyanagi ,  Nagayoshi Ichikawa ,  Kenji Yamazaki ,  Junichi Takagi ,  Hidehiro Urata ,  Shunichi Suzuki ,  Kenro Takamori ,  Junichi Suzuki

IPC分类号： G21C9/00

CPC分类号： G21C17/0225 ,  G21C13/08 ,  G21C17/022 ,  G21Y2002/103 ,  G21Y2004/10 ,  Y02E30/40

摘要： In a nuclear power plant, a corrosion-resistant oxide film on a surface of the metal component of a reactor structure is exposed to a high-temperature water, the corrosion-resistant oxide film containing an oxide having a property of a P-type semiconductor, and a catalytic substance having a property of an N-type semiconductor is deposited on the oxide film. The oxide film maintains the property of the P-type semiconductor.

摘要翻译： 在核电站中，将反应器结构体的金属成分表面的耐腐蚀氧化膜暴露于高温水中，含有具有P型半导体的性质的氧化物的耐腐蚀性氧化物膜 ，并且在氧化物膜上沉积具有N型半导体性质的催化物质。 氧化膜保持P型半导体的性质。

公开(公告)号：US07064900B2

公开(公告)日：2006-06-20

申请号：US10492657

申请日：2002-11-19

申请人： Norio Fukasawa ,  Junichi Suzuki ,  Kiyoshi Toyota ,  Tetsu Tanaka ,  Takeshi Kubo ,  Masahiro Saito ,  Satoru Ishii

发明人： Norio Fukasawa ,  Junichi Suzuki ,  Kiyoshi Toyota ,  Tetsu Tanaka ,  Takeshi Kubo ,  Masahiro Saito ,  Satoru Ishii

IPC分类号： G02B27/10 ,  G11B7/00 ,  G11B7/135

CPC分类号： G11B7/0908 ,  G11B7/00 ,  G11B7/0901 ,  G11B7/0909 ,  G11B7/0916 ,  G11B7/1356 ,  G11B7/1381

摘要： An optical pickup device is provided which includes a first diffraction grating (45) that splits a light beam emitted from a light-emitting/-detecting element (31) into a zero-order light beam and positive and negative first-order light beams, a second diffraction grating (46) that diffracts return light from an optical disk (2) for traveling along a light path separate from that of the outgoing light, and a third diffraction grating (47) that corrects the deviation of the light path by diffracting the positive first-order light beam diffracted by the second diffraction grating (46). The light-emitting/-detecting element (31) provides a focusing error signal FE by detecting the negative first-order light beam, and a tracking error signal by detecting return portions of the positive and negative first-order light beams from the first diffraction grating (45).

摘要翻译： 提供了一种光学拾取装置，其包括将从发光/检测元件（31）发射的光束分成零级光束和正和负一级光束的第一衍射光栅（45） 第二衍射光栅（46），衍射来自光盘（2）的返回光，用于沿着与出射光分离的光路行进;以及第三衍射光栅（47），其通过衍射来校正光路的偏差 由第二衍射光栅（46）衍射的正一级光束。 发光/检测元件（31）通过检测负一阶光束提供聚焦误差信号FE，并且通过检测来自第一衍射的正和负一级光束的返回部分来提供跟踪误差信号 光栅（45）。

公开(公告)号：US07064382B2

公开(公告)日：2006-06-20

申请号：US11074064

申请日：2005-03-08

申请人： Noriaki Kodama ,  Kohji Kanamori ,  Junichi Suzuki ,  Teiichirou Nishizaka ,  Yasuhide Den ,  Shinji Fujieda ,  Akio Toda

发明人： Noriaki Kodama ,  Kohji Kanamori ,  Junichi Suzuki ,  Teiichirou Nishizaka ,  Yasuhide Den ,  Shinji Fujieda ,  Akio Toda

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L29/1033 ,  H01L29/7845 ,  H01L29/7846 ,  H01L29/7881

摘要： A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.

摘要翻译： 非易失性存储器件包括形成在半导体衬底中的源区和漏区，以及形成在半导体衬底中的源区和漏区之间的沟道区上的绝缘膜。 非易失性存储器件还包括形成在通道区域上方以存储电荷的电介质膜，以及形成在电介质膜上的控制栅极。 通道区域的压缩应力为50MPa以下。

公开(公告)号：US07045483B2

公开(公告)日：2006-05-16

申请号：US10257211

申请日：2002-01-18

申请人： Naomi Noda ,  Junichi Suzuki ,  Kanji Yamada

发明人： Naomi Noda ,  Junichi Suzuki ,  Kanji Yamada

IPC分类号： B01J23/00

CPC分类号： B01D53/9422 ,  B01D53/945 ,  B01D2255/1021 ,  B01D2255/2022 ,  B01D2255/2042 ,  B01D2255/2047 ,  B01D2255/91 ,  B01J23/02 ,  B01J23/58 ,  B01J37/0244 ,  B01J37/0248 ,  Y02T10/22

摘要： A catalyst body is obtained by loading, on a carrier, a catalyst layer containing an alkali metal and/or an alkaline earth metal, wherein at least one kind of alkali metal and/or alkaline earth metal is allowed to be present in the carrier and/or between the carrier and the catalyst layer. With this catalyst body, the deterioration of the carrier caused by the alkali metal, etc. is prevented effectively and the long-term use has been made possible.

公开(公告)号：US20050239026A1

公开(公告)日：2005-10-27

申请号：US10889098

申请日：2004-07-13

申请人： Junichi Suzuki ,  Yutaka Sato

发明人： Junichi Suzuki ,  Yutaka Sato

IPC分类号： A63B69/36 ,  A63B69/00

CPC分类号： A63B24/0003 ,  A63B69/36 ,  A63B2024/0012 ,  A63B2220/806 ,  A63B2225/20

摘要： It is sought to provide a form evaluation system, which permits clear visual comparison of an ideal form and the own form on an image and accurately understanding points to be improved. A database is formed with check points of the form in golf, for instance, as reference data of form evaluation. A predetermined division number of still images are produced from motion picture image data of subscriber, these still images are displayed on a personal computer display screen, the form of the subscriber's still images is evaluated with the database as reference, and on the basis of the evaluation a form evaluation sheet is produced, which contains a predetermined division number of serially changing still images and form guide comments each provided for each of these still images.

摘要翻译： 旨在提供一种形式评估系统，其允许对图像上的理想形式和自己的形式进行清晰的视觉比较，并准确地理解要改进的点。 以高尔夫形式的检查点形成数据库，例如作为表格评估的参考数据。 根据用户的动态图像图像数据生成预定的静止图像分割数，将这些静止图像显示在个人计算机显示画面上，以数据库为参考，以用户静止图像的形式为基础， 产生评估表格评估表，该表格评估表包含每个为这些静止图像提供的每个静态图像的预定分割数和形式指导注释。

公开(公告)号：US20050218922A1

公开(公告)日：2005-10-06

申请号：US11088833

申请日：2005-03-25

申请人： Junichi Suzuki ,  Kohji Kanamori

发明人： Junichi Suzuki ,  Kohji Kanamori

IPC分类号： G01R31/28 ,  G01R31/26 ,  G11C16/06 ,  G11C29/00 ,  G11C29/06 ,  H01L21/66 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G01R31/2621

摘要： An apparatus for testing a defect, includes a semiconductor element. In the semiconductor element, a conductive film is formed on an STI (shallow trench isolation) insulating film, which fills a shallow trench extending into a semiconductor region, through an insulating film in an ordinary state, and the shallow trench is not completely or sufficiently filled with the STI insulating film in a defective state. Also, the apparatus includes a control circuit configured to set a test mode in response to a test mode designation signal, a first voltage applying circuit configured to output a first voltage to the conductive film in the test mode, and a second voltage applying circuit configured to output a second voltage to the semiconductor region in the test mode. The first voltage is higher than the second voltage, and a voltage difference between the first voltage and the second voltage is sufficient to cause breakdown between the conductive film and the semiconductor region in the defective state.

摘要翻译： 用于测试缺陷的装置包括半导体元件。 在半导体元件中，在通常通过绝缘膜的STI（浅沟槽隔离）绝缘膜上形成导电膜，其通过绝缘膜填充延伸到半导体区域中的浅沟槽，并且浅沟槽不完全或充分 填充有缺陷状态的STI绝缘膜。 此外，该装置包括：控制电路，被配置为响应于测试模式指定信号设置测试模式;第一电压施加电路，被配置为在测试模式下向导电膜输出第一电压;以及第二电压施加电路， 以在测试模式中向半导体区域输出第二电压。 第一电压高于第二电压，并且第一电压和第二电压之间的电压差足以导致在缺陷状态下导电膜和半导体区域之间的击穿。

公开(公告)号：US20050199945A1

公开(公告)日：2005-09-15

申请号：US11074064

申请日：2005-03-08

申请人： Noriaki Kodama ,  Kohji Kanamori ,  Junichi Suzuki ,  Teiichirou Nishizaka ,  Yasuhide Den ,  Shinji Fujieda ,  Akio Toda

发明人： Noriaki Kodama ,  Kohji Kanamori ,  Junichi Suzuki ,  Teiichirou Nishizaka ,  Yasuhide Den ,  Shinji Fujieda ,  Akio Toda

IPC分类号： H01L21/8247 ,  H01L21/8239 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/10 ,  H01L29/745 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L29/1033 ,  H01L29/7845 ,  H01L29/7846 ,  H01L29/7881

摘要： A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.

摘要翻译： 非易失性存储器件包括形成在半导体衬底中的源区和漏区，以及形成在半导体衬底中的源区和漏区之间的沟道区上的绝缘膜。 非易失性存储器件还包括形成在通道区域上方以存储电荷的电介质膜，以及形成在电介质膜上的控制栅极。 通道区域的压缩应力为50MPa以下。