摘要:
The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
摘要:
The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
摘要:
An array of non-volatile memory cells arranged in rows and columns is provided. Each memory cell is composed of a transistor made up of a gate, a source, and drain and a capacitance section. Each memory cell is connected to a row decoder through a wordline, to a column decoder through a bitline, and to a source decoder through a sourceline. Arranged in a path extending from a bitline to a sourceline through a transistor is an anisotropic resistance section, e.g., a diode, exhibiting different voltage-current characteristics for different levels of voltages applied thereacross. Because of such arrangement, leakage current occurring to a deselected memory cell in a reading operation can be reduced or can be eliminated. Read errors due to leakage current can be avoided and the power consumption can be reduced.
摘要:
An array of non-volatile memory cells arranged in rows and columns is provided. Each memory cell is composed of a transistor made up of a gate, a source, and drain and a capacitance section. Each memory cell is connected to a row decoder through a wordline, to a column decoder through a bitline, and to a source decoder through a sourceline. Arranged in a path extending from a bitline to a sourceline through a transistor is an anisotropic resistance section, e.g., a diode, exhibiting different voltage-current characteristics for different levels of voltages applied thereacross. Because of such arrangement, leakage current occurring to a deselected memory cell in a reading operation can be reduced or can be eliminated. Read errors due to leakage current can be avoided and the power consumption can be reduced.
摘要:
A column selection circuit of a semiconductor memory includes a plurality of transfer gates each of which is arranged between each sense amplifier and each column select gate for gating each column to an internal bus according to a difference between a potential of each bit line and a precharge potential of each data bus.
摘要:
A random access semiconductor memory having an array of memory cells is provided with an internal test circuit for testing the contents of rows of stored test pattern data which are read from the array in units of data rows, each read from an entire row of cells of the array. The test circuit can be based on a set of transistors which are respectively coupled to the bit lines of the cell array, for detecting coincidence between the states of all of the bits of a data row that is read out, or coincidence between the states of a predetermined set of the row bits.
摘要:
A video memory includes a data storage section having a predetermined bit width of data writing and reading. A data input terminal has a predetermined bit width and is subjected to input data which represents at least a write start position and a write end position. Mask data are generated on the basis of the write start position and the write end position represented by input data. The mask data are fed to the data storage section. Write data are generated. The write data are fed to the data storage section. The bit width of data writing and reading of the data storage section is greater than the bit width of the data input terminal.
摘要:
The invention provide a process for producing vitamin A aldehyde in high yield by oxidizing vitamin A with a aldehyde of the general formula (1) ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and respectively represents a lower alkyl group or a lower alkenyl group in the presence of aluminum alkoxide in a catalytic amount.
摘要:
The present invention provides a novel process for producing .alpha.,.beta.-unsaturated aldehydes including industrial important fragrances such as citral and sinensal, starting materials for preparing pharmaceutical drugs such as senecioaldehyde, farnesal, 8-acetoxy-2,6-dimethyl-2,6-octadienal and the like, directly and in high yield, from formic acid esters of allylic alcohols in the presence of a catalytic amount of aluminum alkoxide by the oxidation of the corresponding alehyde.
摘要:
To extend the function of a bipolar type RAM, a register function is added to the RAM function. The register function is such that the contents stored in a memory cell is inputted to a differential switch, and the output to the differential switch is derived out to constantly read out the stored content of a desired bit with a simple circuit construction.