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95 条记录 (耗时 0.039 秒)

    Printable electronic features on non-uniform substrate and processes for making same
    81.
    发明授权
    Printable electronic features on non-uniform substrate and processes for making same 失效
    不均匀基材上的可印刷电子特征及其制备方法

    公开(公告)号：US08167393B2

    公开(公告)日：2012-05-01

    申请号：US11331190

    申请日：2006-01-13

    申请人： Karel Vanheusden ,  Chuck Edwards

    发明人： Karel Vanheusden ,  Chuck Edwards

    IPC分类号： B41J25/308 ,  B41J29/38 ,  B41J29/393 ,  B41J2/01

    CPC分类号： B41J3/4073 ,  B41J25/308 ,  H05K1/0284 ,  H05K3/125 ,  H05K2203/013 ,  H05K2203/163

    摘要： A system and process for compensating for non-uniform surfaces of a substrate when direct printing traces is provided. The system and process provided herein measures the surface of a substrate and can determine whether the surface is substantially flat, rises or falls, or whether a mesa or valley is encountered. Depending on the surface feature (i.e., mesa, valley, falling or rising surface), the direct printing system can change the frequency of the printing timing signal, advance or retard the print timing signal, advance or retard the print data, or make repeated passes over certain areas. In addition, the process disclosed herein can determine whether two, three or all of the aforementioned steps for compensating for non-uniform substrates should be combined to most effectively and efficiently print on the non-uniform surface of the substrate as intended.

    摘要翻译： 当提供直接印刷迹线时，用于补偿基板的不均匀表面的系统和工艺。 本文提供的系统和过程测量衬底的表面并且可以确定表面是基本上平坦的，上升还是下降的，或者是否遇到台面或谷。 根据表面特征（即台面，谷底，下降或上升表面），直接打印系统可以改变打印定时信号的频率，提前或延迟打印定时信号，提前或延迟打印数据，或重复 经过某些地区。 此外，本文公开的方法可以确定用于补偿不均匀衬底的上述两个，三个或全部步骤是否应当被组合以最有效地和有效地在预定的基板的非均匀表面上打印。

    Printable electronic features on non-uniform substrate and processes for making same
    85.
    发明申请
    Printable electronic features on non-uniform substrate and processes for making same 失效
    不均匀基材上的可印刷电子特征及其制备方法

    公开(公告)号：US20060158470A1

    公开(公告)日：2006-07-20

    申请号：US11331190

    申请日：2006-01-13

    申请人： Karel Vanheusden ,  Chuck Edwards

    发明人： Karel Vanheusden ,  Chuck Edwards

    IPC分类号： B41J25/308

    CPC分类号： B41J3/4073 ,  B41J25/308 ,  H05K1/0284 ,  H05K3/125 ,  H05K2203/013 ,  H05K2203/163

    摘要： A system and process for compensating for non-uniform surfaces of a substrate when direct printing traces is provided. The system and process provided herein measures the surface of a substrate and can determine whether the surface is substantially flat, rises or falls, or whether a mesa or valley is encountered. Depending on the surface feature (i.e., mesa, valley, falling or rising surface), the direct printing system can change the frequency of the printing timing signal, advance or retard the print timing signal, advance or retard the print data, or make repeated passes over certain areas. In addition, the process disclosed herein can determine whether two, three or all of the aforementioned steps for compensating for non-uniform substrates should be combined to most effectively and efficiently print on the non-uniform surface of the substrate as intended.

    摘要翻译： 当提供直接印刷迹线时，用于补偿基板的不均匀表面的系统和工艺。 本文提供的系统和过程测量衬底的表面并且可以确定表面是基本上平坦的，上升还是下降的，或者是否遇到台面或谷。 根据表面特征（即台面，谷底，下降或上升表面），直接打印系统可以改变打印定时信号的频率，提前或延迟打印定时信号，提前或延迟打印数据，或重复 经过某些地区。 此外，本文公开的方法可以确定用于补偿不均匀衬底的上述两个，三个或全部步骤是否应当被组合以最有效地和有效地在预定的基板的非均匀表面上打印。

    Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
    86.
    发明授权
    Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor 有权
    用于在流通式等离子体反应器中生产IV族纳米颗粒的方法和装置

    公开(公告)号：US08471170B2

    公开(公告)日：2013-06-25

    申请号：US12113451

    申请日：2008-05-01

    申请人： Xuegeng Li ,  Christopher Alcantara ,  Maxim Kelman ,  Elena Rogojina ,  Eric Schiff ,  Mason Terry ,  Karel Vanheusden

    发明人： Xuegeng Li ,  Christopher Alcantara ,  Maxim Kelman ,  Elena Rogojina ,  Eric Schiff ,  Mason Terry ,  Karel Vanheusden

    IPC分类号： B23K10/00 ,  H01J7/24

    CPC分类号： B82Y30/00 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/083 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0875 ,  B01J2219/0883 ,  B01J2219/0894 ,  C01B33/029 ,  H01J37/32541 ,  H01J37/32568

    摘要： A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

    摘要翻译： 公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。 所述装置包括外电介质管，所述外管包括外管内表面和外管外表面，其中所述外管内表面具有外管内表面蚀刻速率。 所述装置还包括内部介电管，所述内部介电管包括内管外表面，其中所述外管内表面和所述内管外表面限定环形通道，并且其中所述内管外表面具有内管外表面 表面蚀刻速率。 该装置还包括第一外电极，第一外电极具有设置在外管外表面上的第一外电极内表面。 所述装置还包括第一中心电极，所述第一中心电极设置在所述内部电介质管内，所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极 和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。

    Methods for forming composite nanoparticle-metal metallization contacts on a substrate
    89.
    发明授权
    Methods for forming composite nanoparticle-metal metallization contacts on a substrate 失效
    在基板上形成复合纳米颗粒金属化接触的方法

    公开(公告)号：US07704866B2

    公开(公告)日：2010-04-27

    申请号：US12050635

    申请日：2008-03-18

    申请人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

    发明人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

    IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/265

    CPC分类号： H01L31/022425 ,  Y02E10/50 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/778 ,  Y10S977/939

    摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.

    摘要翻译： 公开了一种用于形成与基板的接触的方法。 所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。 该方法还包括在基板的第一侧上形成介电层。 该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。 该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。