CMOS image sensors
    81.
    发明授权
    CMOS image sensors 有权
    CMOS图像传感器

    公开(公告)号:US08309996B2

    公开(公告)日:2012-11-13

    申请号:US13064289

    申请日:2011-03-16

    IPC分类号: H01L31/113

    摘要: Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.

    摘要翻译: 提供互补金属氧化物半导体(CMOS)图像传感器(CIS)及其制造方法,传感器包括在其中限定了第一,第二,第三和第四区域的基板上的外延层。 可以在第一区域中的外延层的上部形成光电二极管。 可以在第二,第三和第四区域中的外延层上形成多个栅极结构。 可以在栅极结构和第一和第二区域中的外延层上形成第一阻挡层。 可以在与第二区域中的栅极结构相邻的外延层的上部形成第一杂质层,并且在第三和第四区域中与栅极结构相邻的外延层的上部形成第二杂质层。 可以在光电二极管上方形成滤色器层。 可以在滤色器层上形成微透镜。

    Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same
    83.
    发明授权
    Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same 有权
    具有自增强传输晶体管栅极的图像传感器及其操作和制造方法

    公开(公告)号:US07973346B2

    公开(公告)日:2011-07-05

    申请号:US11335925

    申请日:2006-01-18

    IPC分类号: H01L31/062 H01L31/06

    摘要: Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

    摘要翻译: 公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器(例如,CMOS图像传感器),其中至少一个晶体管的栅极具有设置在其上的升压栅极,该升压栅极包括导电膜图案, 插入绝缘膜。 因此,施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。 因此,转移栅极被提供有转印电压和升压栅极耦合电压的总和,并且不需要为图像传感器提供高电压发生器。 如果将这样的耦合电压施加到驱动晶体管的驱动栅极,则可以增强动态动作范围。

    CMOS image sensor and method of fabricating the same
    86.
    发明授权
    CMOS image sensor and method of fabricating the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号:US07517715B2

    公开(公告)日:2009-04-14

    申请号:US11964522

    申请日:2007-12-26

    IPC分类号: H01L21/20

    摘要: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

    摘要翻译: 提供CMOS图像传感器及其制造方法。 图像传感器包括在二极管区域保护光电二极管的阻挡层。 阻挡层被形成为覆盖二极管区域的顶部并且延伸到有源区域以便覆盖传输栅极和浮动扩散层。 因此,在形成各种栅极的侧壁间隔物期间,或者在形成DDD或LDD结构的结区域期间,通过离子注入,浮动扩散层可能不会受到蚀刻的侵蚀,从而减少漏电流和暗电流 浮动扩散层。

    Image sensor and method of fabrication
    87.
    发明授权
    Image sensor and method of fabrication 失效
    图像传感器和制造方法

    公开(公告)号:US07504614B2

    公开(公告)日:2009-03-17

    申请号:US11336906

    申请日:2006-01-23

    IPC分类号: H01L27/00 G01J3/50

    摘要: Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

    摘要翻译: 公开了一种图像传感器及其制造方法。 图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。 层间绝缘膜包含多层互连层。 滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。 钝化层插在滤色器层和层间绝缘膜之间。

    Method of isolating 1,3-propanediol or 1,3-propanediol and 1,2-propanediol from solution containing 1,3-propanediol, 1,2-propanediol, glycerol, and glucose
    88.
    发明授权
    Method of isolating 1,3-propanediol or 1,3-propanediol and 1,2-propanediol from solution containing 1,3-propanediol, 1,2-propanediol, glycerol, and glucose 有权
    从含有1,3-丙二醇,1,2-丙二醇,甘油和葡萄糖的溶液中分离1,3-丙二醇或1,3-丙二醇和1,2-丙二醇的方法

    公开(公告)号:US07488855B2

    公开(公告)日:2009-02-10

    申请号:US11574515

    申请日:2005-09-01

    IPC分类号: C07C29/68

    CPC分类号: C07C29/86 C07C31/205

    摘要: A method of isolating 1,3-propanediol from a solution containing 1,3-propanediol, 1,2-propanediol, glycerol, and glucose is provided. The method includes: obtaining a concentrate by concentrating the solution via reduced pressure evaporation; dissolving the concentrate in a solvent selected from the group consisting of ethyl acetate, methyl ethyl ketone, and a mixture thereof and leaving the solution alone to fractionate the compounds in a solvent layer and a water layer; and loading the solvent layer in a silica-filled column under a low pressure liquid chromatography condition and eluting the solvent layer with a mixed solvent of methanol and at least one solvent which is miscible with methanol and has a polarity lower than methanol.

    摘要翻译: 提供了从含有1,3-丙二醇,1,2-丙二醇,甘油和葡萄糖的溶液中分离1,3-丙二醇的方法。 该方法包括:通过减压蒸发浓缩溶液获得浓缩物; 将浓缩物溶解在选自乙酸乙酯,甲基乙基酮及其混合物的溶剂中,并单独留下溶液以在溶剂层和水层中分离出化合物; 并在低压液相色谱条件下将溶剂层装入二氧化硅填充柱中,并用甲醇和至少一种与甲醇混溶并且极性低于甲醇的溶剂的混合溶剂洗脱溶剂层。

    CMOS image sensor with photo-detector protecting layers
    89.
    发明申请
    CMOS image sensor with photo-detector protecting layers 失效
    具有光电检测器保护层的CMOS图像传感器

    公开(公告)号:US20090014763A1

    公开(公告)日:2009-01-15

    申请号:US12214666

    申请日:2008-06-20

    IPC分类号: H01L27/146

    摘要: An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector is formed to a side of the first gate electrode within the semiconductor substrate. The first protecting layer is formed over the first gate electrode and the photo-detector. The first spacers are formed over the first protecting layer to the sides of the first gate electrode. The second protecting layer is formed over the first protecting layer and the spacers. The first and second protecting layers are for preventing a contaminant from reaching the photo-detector.

    摘要翻译: 图像传感器包括逻辑区域和具有第一栅电极,光检测器,第一保护层,第一间隔物和第二保护层的APS区域。 第一栅电极形成在半导体衬底上。 光检测器形成在半导体衬底内的第一栅电极的一侧。 第一保护层形成在第一栅电极和光检测器之上。 在第一保护层上形成第一间隔物到第一栅电极的侧面。 第二保护层形成在第一保护层和间隔物上。 第一和第二保护层用于防止污染物到达光检测器。

    Methods of fabricating an image sensor
    90.
    发明授权
    Methods of fabricating an image sensor 失效
    制作图像传感器的方法

    公开(公告)号:US07462520B2

    公开(公告)日:2008-12-09

    申请号:US11464244

    申请日:2006-08-14

    IPC分类号: H01L27/146

    摘要: Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.

    摘要翻译: 提供制造图像传感器的方法。 这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层,以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极 在半导体衬底的第二区域中的电极层。 所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案,并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。