公开(公告)号：US20050012100A1

公开(公告)日：2005-01-20

申请号：US10823713

申请日：2004-04-14

申请人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

发明人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/036 ,  H01L29/04 ,  G02F1/133

CPC分类号： G09G3/3275 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696

摘要： The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One of the thin film transistors in the pixel array portion and the thin film transistors in the driving circuit has zigzag shape in its gate region or drain region or has an offset region.

摘要翻译： 本发明公开了一种寿命长的高速平板显示器，其中排列有多个像素的像素阵列部分中的薄膜晶体管和用于驱动像素阵列部分的像素的驱动电路部分具有不同的 电阻值彼此相差或具有彼此不同的几何结构。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。 像素阵列部分中的薄膜晶体管之一和驱动电路中的薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

公开(公告)号：US08890165B2

公开(公告)日：2014-11-18

申请号：US12714154

申请日：2010-02-26

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法，薄膜晶体管（TFT），具有该多晶硅层的有机发光二极管（OLED）显示器件及其制造方法。 形成多晶硅层的方法包括提供衬底，在衬底上形成缓冲层，在缓冲层上形成非晶硅层，在非晶硅层中形成沟槽，在非晶硅层上形成覆盖层， 在所述覆盖层上形成金属催化剂层，对所述基板退火并将所述非晶硅层析出为多晶硅层。

公开(公告)号：US08815663B2

公开(公告)日：2014-08-26

申请号：US13313555

申请日：2011-12-07

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/3262 ,  H01L29/66757

摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

摘要翻译： 一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极 绝缘层和栅电极，其通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状，其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。

公开(公告)号：US08569764B2

公开(公告)日：2013-10-29

申请号：US12045172

申请日：2008-03-10

申请人： Byoung-Keon Park ,  Tae-hoon Yang ,  Jin-Wook Seo ,  Sei-Hwan Jung ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-hoon Yang ,  Jin-Wook Seo ,  Sei-Hwan Jung ,  Ki-Yong Lee

IPC分类号： H01L29/10

CPC分类号： H01L29/78615 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/3244

摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.

公开(公告)号：US20130185321A1

公开(公告)日：2013-07-18

申请号：US13528292

申请日：2012-06-20

申请人： Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

发明人： Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

IPC分类号： G06F17/30

CPC分类号： G06F17/30516

摘要： An apparatus and a method of optimizing queries through scheduling User Defined Operators (UDOs) in a Data Stream Management System (DSMS), are provided. The apparatus includes a query optimizer configured to receive queries, each of the queries including the UDOs and data streams subject to respective operations of the UDOs, and group the data streams and UDOs into scheduling units, each of the scheduling units including one of the data streams and one of the UDOs. The apparatus further includes a scheduler configured to schedule an execution order in which the scheduling units are executed.

摘要翻译： 提供了一种通过调度数据流管理系统（DSMS）中的用户定义运算符（UDO）来优化查询的设备和方法。 该装置包括：查询优化器，被配置为接收查询，每个查询包括UDO和经受UDO各自操作的数据流，并将数据流和UDO分组成调度单元，每个调度单元包括数据之一 流和其中一个UDO。 该装置还包括调度器，其被配置为调度其中执行调度单元的执行顺序。

公开(公告)号：US08334536B2

公开(公告)日：2012-12-18

申请号：US12048662

申请日：2008-03-14

申请人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

发明人： Kyoung-Bo Kim ,  Kil-Won Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Moo-Jin Kim

IPC分类号： H01L29/04

CPC分类号： H01L29/78675 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

摘要： A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.

摘要翻译： 薄膜晶体管及其制造方法包括：具有通过薄射束定向结晶法形成的具有15nm以下的顶面的高度变化的晶体生长方向的晶界的半导体层。 此外，提供了包括薄膜晶体管的有机发光二极管（OLED）显示装置，并且具有通过简单的工艺制造的优异特性。 此外，提供了一种平板显示装置及其制造方法，包括：像素区域中的多晶硅层; 以及通过薄束定向结晶法形成的周边区域中的多晶硅层。 此外，半导体器件及其制造方法包括：通过薄射束定向结晶法形成的光电二极管区域中的半导体层的本征区域。

公开(公告)号：US20120313114A1

公开(公告)日：2012-12-13

申请号：US13200383

申请日：2011-09-23

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L51/50 ,  H01L29/786 ,  H01L51/40 ,  H01L21/336

CPC分类号： H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

摘要： A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.

摘要翻译： 一种制造薄膜晶体管（TFT）的方法，通过该方法制造的TFT，制造包括TFT的有机发光显示装置的方法，包括TFT的显示器。 通过在TFT的下方包含缓冲层和在硅层上方的绝缘层，硅层可以结晶而不暴露于空气，从而可以防止污染。 此外，由于上覆绝缘层，可以将硅层图案化而不直接接触光致抗蚀剂。 结果是具有均匀和改善的电特性的TFT和改进的显示装置。

公开(公告)号：US08125033B2

公开(公告)日：2012-02-28

申请号：US11636962

申请日：2006-12-12

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277

摘要： A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved.

摘要翻译： 提供多晶硅层，使用多晶硅层的平板显示器及其制造方法。 通过使用超晶硅（SGS）结晶技术使非晶硅层的晶种区域结晶来形成多晶硅层。 种子区域的结晶度扩展到晶种区域之外的结晶区域。 结晶区域形成为可以结合以制造薄膜晶体管以驱动平板显示器的半导体层。 通过本发明的方法制成的半导体层提供了晶界的均匀生长，并且改善了由半导体层制成的薄膜晶体管的特性。

公开(公告)号：US20110014755A1

公开(公告)日：2011-01-20

申请号：US12891379

申请日：2010-09-27

申请人： Tae-Hoon YANG ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Kil-Won Lee

发明人： Tae-Hoon YANG ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Kil-Won Lee

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/4908 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02694 ,  H01L27/1277 ,  H01L29/78654

摘要： A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.

摘要翻译： 一种制造多晶硅（poly-Si）层的方法包括提供衬底，在衬底上形成非晶硅（a-Si）层，形成厚度约为10〜 Si层，在所述热氧化物层上形成金属催化剂层，并且使所述基板退火以使用所述金属催化剂层的金属催化剂将所述a-Si层结晶成多晶硅层。 因此，可以通过超晶硅（SGS）结晶法将a-Si层结晶成多晶硅层。 此外，可以在a-Si层的脱氢过程中形成热氧化物层，从而可以省略形成SGS结晶方法所需的另外的形成覆盖层的工艺，从而简化了制造工艺。

公开(公告)号：US07825411B2

公开(公告)日：2010-11-02

申请号：US11017667

申请日：2004-12-22

申请人： Jin-Wook Seo ,  Ki-Yong Lee ,  Tae-Hoon Yang ,  Byoung-Keon Park

发明人： Jin-Wook Seo ,  Ki-Yong Lee ,  Tae-Hoon Yang ,  Byoung-Keon Park

IPC分类号： H01L31/00

CPC分类号： H01L27/1296 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.

摘要翻译： 提供薄膜晶体管及其制造方法。 在薄膜晶体管中，种子或晶界存在于半导体层图案中，但不存在于接合区域中。 该方法包括形成半导体层图案。 形成半导体层图案包括：在非晶硅层上形成和图案化第一覆盖层; 在所述第一覆盖层图案上形成第二覆盖层; 在所述第二盖层上形成金属催化剂层; 扩散金属催化剂; 并使非晶硅层结晶以形成多晶硅层。 因此，可以防止在接合区域中产生阱，从而获得改进且均匀的器件特性。