公开(公告)号：US20060114946A1

公开(公告)日：2006-06-01

申请号：US11001486

申请日：2004-11-30

Applicant: Yunlong Sun ,  Richard Harris

Inventor： Yunlong Sun ,  Richard Harris

IPC: H01S3/10

CPC classification number: H01S3/109

Abstract: A wavelength converter (34) such as a nonlinear crystal has an angle cut exit surface (36) to separate a harmonic wavelength from a fundamental or different harmonic wavelength. A solid optical overlay medium (28) has an entrance surface (38) that is angle cut to mate with the converter exit surface (36). The optical overlay medium (28) is substantially transparent to the fundamental and selected harmonic wavelengths, has a refractive index similar to that of the wavelength converter (34), and has damage thresholds at the selected wavelengths that are greater than the respective damage thresholds of the wavelength converter (34).

Abstract translation: 诸如非线性晶体的波长转换器（34）具有将谐波波长与基波或不同谐波波长分离的角度切除出射表面（36）。 固体光学覆盖介质（28）具有与转换器出口表面（36）配合的角度切割的入口表面（38）。 光学覆盖介质（28）对于基本和选定的谐波波长基本上是透明的，具有与波长转换器（34）的折射率类似的折射率，并且在所选择的波长处具有大于相应损伤阈值的损伤阈值 波长转换器（34）。

公开(公告)号：US20050282319A1

公开(公告)日：2005-12-22

申请号：US11051261

申请日：2005-02-04

Applicant: Kelly Bruland ,  Brian Baird ,  Ho Lo ,  Richard Harris ,  Yunlong Sun

Inventor： Kelly Bruland ,  Brian Baird ,  Ho Lo ,  Richard Harris ,  Yunlong Sun

IPC: B23K26/06 ,  B23K26/067 ,  H01L21/00 ,  H01L21/26 ,  H01L21/302 ,  H01L21/324 ,  H01L21/42 ,  H01L21/461 ,  H01L21/477 ,  H01L21/84 ,  H01L23/525

CPC classification number: B23K26/067 ,  B23K26/0604 ,  B23K26/0613 ,  H01L21/76894 ,  H01L23/5258 ,  H01L27/1052 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots. The total region is larger than the first beam spot and also larger than the second beam spot. The method sets respective first and second energy values of the first and second laser beam pulses to cause complete depthwise processing of the selected structure across the width of the structure in at least a portion of the total region.

Abstract translation: 方法和系统使用激光脉冲来处理半导体衬底上或其中的选定结构。 该结构具有表面，宽度和长度。 随着激光脉冲处理所选择的结构，激光脉冲沿着沿扫描光束路径相对于衬底移动的轴传播。 所述方法同时在所选择的结构上产生沿相应的第一和第二激光束轴线在不同的第一和第二位置与所选择的结构相交的第一和第二激光束脉冲。 第一和第二激光束脉冲冲击所选结构的表面上相应的第一和第二光束点。 每个光束点至少包含所选链接的宽度。 第一和第二光束斑点沿着所选择的结构的长度在空间上彼此偏移以限定由第一和第二光束点两者覆盖的重叠区域，以及由第一和第二光束斑点中的一个或两个覆盖的总区域 。 总区域大于第一束斑，并且大于第二束斑。 该方法设置第一和第二激光束脉冲的相应的第一和第二能量值，以便在整个区域的至少一部分中跨结构的宽度对所选结构进行完全深度处理。

公开(公告)号：US20050254530A1

公开(公告)日：2005-11-17

申请号：US10893148

申请日：2004-07-16

Applicant: Yunlong Sun

Inventor： Yunlong Sun

IPC: B23K26/00 ,  H01S3/00 ,  H01S3/06 ,  H01S3/07 ,  H01S3/08 ,  H01S3/081 ,  H01S3/0941 ,  H01S3/109 ,  H01S3/11 ,  H01S3/10

CPC classification number: H01S3/109 ,  H01S3/005 ,  H01S3/07 ,  H01S3/0813 ,  H01S3/09415 ,  H01S3/117

Abstract: A solid-state laser (10) has a laser resonator (20) with output ports (22) at both ends to provide two separate laser micromachining beams (42). A set of wavelength converters (26) can be employed to convert the laser machining beams (42) to harmonic wavelength outputs, thus reducing the risk of damage to the wavelength converters and enabling higher total average harmonic power to be generated from a single laser. The laser machining beams (42) can be different to perform different laser operations independently or can be adapted to have substantially identical parameters to permit simultaneous parallel high-quality laser operations on substantially identical workpieces (54), or the laser machining beams (42) can be combined to provide a single laser system output (42e). The two laser machining beams (42) can be further split or multiplexed to suit particular applications.

Abstract translation: 固体激光器（10）具有在两端具有输出端口（22）的激光谐振器（20），以提供两个单独的激光微加工光束（42）。 可以使用一组波长转换器（26）将激光加工光束（42）转换成谐波波长输出，从而降低损坏波长转换器的风险，并且能够从单个激光器产生更高的总平均谐波功率。 激光加工光束（42）可以不同，以独立地执行不同的激光操作，或者可以适于具有基本上相同的参数，以允许在基本上相同的工件（54）上的同时并行的高质量激光操作或激光加工光束（42） 可以组合提供单个激光系统输出（42e）。 两个激光加工光束（42）可进一步分割或多路复用以适合特定应用。

公开(公告)号：US20050041976A1

公开(公告)日：2005-02-24

申请号：US10921765

申请日：2004-08-18

Applicant: Yunlong Sun ,  Robert Hainsey

Inventor： Yunlong Sun ,  Robert Hainsey

IPC: B23K20060101 ,  B23K26/06 ,  B23K26/38 ,  H01S20060101 ,  H04J14/02

CPC classification number: H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K2101/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a master oscillator power amplifier, a driver (208) of a diode laser (202) is specially controlled to generate a set of two or more injection laser pulses that are injected into a power amplifier (204) operated in an unsaturated state to generate a set (50) of laser pulses (52) that replicate the temporal power profile of the injection laser pulses to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. Each set (50) includes at least one specially tailored pulse (52) and/or two or more pulses (50) having different temporal power profiles. The duration of the set (50) is short enough to be treated as a single “pulse” by conventional positioning systems (380) to perform on-the-fly link removal without stopping.

Abstract translation: 在主振荡器功率放大器中，特别地控制二极管激光器（202）的驱动器（208），以产生注入到以不饱和状态操作的功率放大器（204）中的两个或更多个注入激光脉冲的集合，以产生 一组（50）激光脉冲（52），其复制所述注入激光脉冲的时间功率分布以去除存储器或其它IC芯片中的导电连接（22）和/或其上覆钝化层（44）。 每个组（50）包括具有不同时间功率分布的至少一个特别定制的脉冲（52）和/或两个或更多个脉冲（50）。 集合（50）的持续时间足够短以被常规定位系统（380）视为单个“脉冲”，以在不停止的情况下执行即时链路去除。

公开(公告)号：US06806440B2

公开(公告)日：2004-10-19

申请号：US10096629

申请日：2002-03-12

Applicant: Yunlong Sun ,  Richard S. Harris

Inventor： Yunlong Sun ,  Richard S. Harris

IPC: B23K2638

CPC classification number: H01S3/1022 ,  B23K26/382 ,  B23K26/40 ,  B23K2101/42 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/16 ,  B23K2103/172 ,  B23K2103/26 ,  B23K2103/42 ,  B23K2103/50 ,  B23K2103/52 ,  H01S3/094076 ,  H01S3/0941 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/1024 ,  H01S3/109 ,  H01S3/117 ,  H05K3/0026 ,  H05K3/0038

Abstract: A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.

Abstract translation: 准CW二极管或灯泵浦的AO Q开关固态紫外激光系统（10）使准CW泵浦的定时与定位系统（36）的运动同步，以减少定位系统（36）的泵送 ）从一个目标区域（31）移动到下一个目标区域（31），以在高通量下在衬底中形成多个通孔。 因此，即使通过激光介质（16）的平均泵浦功率和激光泵浦二极管（14）的热负载仍然保持与通过传统CW泵浦现有可用的通常形式的可用UV功率相同 可用的激光泵浦二极管（14）。 可以进一步修改准CW泵浦电流分布，以实现优选的UV脉冲幅度分布。

公开(公告)号：US06297541B1

公开(公告)日：2001-10-02

申请号：US09238171

申请日：1999-01-28

Applicant: Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

Inventor： Taiji Ema ,  Edward J. Swenson ,  Thomas W. Richardson ,  Yunlong Sun

IPC: H01L2358

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.

Abstract translation: 半导体器件包括形成在衬底10上的阻挡层12，形成在阻挡层12上的绝缘膜14和形成在绝缘膜14上的保险丝22。阻挡层12形成在保险丝22的下面，由此熔断器 通过激光烧蚀断开，并且激光烧蚀可以通过阻挡层12以良好的可控性而停止，而不损坏衬底。 要断开的保险丝可以以非常小的间距布置，这可以提高保险丝电路的集成度。

公开(公告)号：US5685995A

公开(公告)日：1997-11-11

申请号：US538073

申请日：1995-10-02

Applicant: Yunlong Sun ,  Edward J. Swenson

Inventor： Yunlong Sun ,  Edward J. Swenson

IPC: B23K26/00 ,  B23K26/06 ,  H01L21/428

CPC classification number: B23K26/032 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0665 ,  B23K26/351

Abstract: A laser system (50) and processing method exploit a wavelength range (40) in which devices, including any semiconductor material-based devices (10) affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing performance drift or malfunctions in the processed devices. True measurement values of operational parameters of the devices can, therefore, be obtained without delay for device recovery, i.e., can be obtained substantially instantaneously with laser impingement. Accordingly, the present invention allows faster functional laser processing, eases geometric restrictions on circuit design, and facilitates production of denser and smaller devices.

Abstract translation: 激光系统（50）和处理方法利用波长范围（40），其中包括受常规激光波长影响的任何基于半导体材料的器件（10）的器件和具有集成到其电路中的光敏或光电子部分的器件 ，可以有效地进行功能修剪，而不会引起处理器件中的性能漂移或故障。 因此，可以无延迟地获得器件的操作参数的真实测量值，用于器件恢复，即可以通过激光冲击基本上瞬间获得。 因此，本发明允许更快的功能激光处理，简化了对电路设计的几何限制，并且便于生产更致密和更小的器件。