MICROELECTROMECHANICAL LOAD SENSOR AND METHODS OF MANUFACTURING THE SAME
    82.
    发明申请
    MICROELECTROMECHANICAL LOAD SENSOR AND METHODS OF MANUFACTURING THE SAME 有权
    微电子负载传感器及其制造方法

    公开(公告)号:US20140007705A1

    公开(公告)日:2014-01-09

    申请号:US13934900

    申请日:2013-07-03

    Abstract: A microelectromechanical (“MEMS”) load sensor device for measuring a force applied by a human user is described herein. In one aspect, the load sensor device has a contact surface in communication with a touch surface which communicates forces originating on the touch surface to a deformable membrane, on which load sensor elements are arranged, such that the load sensor device produces a signal proportional to forces imparted by a human user along the touch surface. In another aspect, the load sensor device has an overload protection ring to protect the load sensor device from excessive forces. In another aspect, the load sensor device has embedded logic circuitry to allow a microcontroller to individually address load sensor devices organized into an array. In another aspect, the load sensor device has electrical and mechanical connectors such as solder bumps designed to minimize cost of final component manufacturing.

    Abstract translation: 本文描述了用于测量人类用户施加的力的微机电(“MEMS”)负载传感器装置。 在一个方面,负载传感器装置具有与触摸表面连通的接触表面,该接触表面将起始于触摸表面的力连接到可变形的膜上,负载传感器元件布置在其上,使得负载传感器装置产生与 由人类使用者沿着触摸表面施加的力。 在另一方面,负载传感器装置具有过载保护环以保护负载传感器装置免受过大的力。 在另一方面,负载传感器装置具有嵌入式逻辑电路,以允许微控制器分别地组织成阵列的负载传感器装置。 在另一方面,负载传感器装置具有电气和机械连接器,例如设计成最小化最终部件制造成本的焊料凸块。

    CAPACITIVE PRESSURE SENSING SEMICONDUCTOR DEVICE
    83.
    发明申请
    CAPACITIVE PRESSURE SENSING SEMICONDUCTOR DEVICE 有权
    电容式压力传感半导体器件

    公开(公告)号:US20130193532A1

    公开(公告)日:2013-08-01

    申请号:US13728699

    申请日:2012-12-27

    CPC classification number: H01L29/84 G01L1/148 G01L9/0073 G01L9/12 G06F3/03545

    Abstract: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.

    Abstract translation: 提供一种电容式压力感测半导体器件,其具有抵抗由加压构件施加的压力的耐压性,并且可以有效地检测压力。 压力感测半导体器件包括:压力检测部,其检测作为电容变化的压力;以及接收压力检测部的封装。 压力检测部分包括第一电极和与第一电极相对设置的第二电极,其间具有确定的距离。 在第一电极和第二电极之间形成电容,并且根据通过按压部件传递到第一电极的压力引起的所述距离的变化而变化。 该包装还包括压力传递部件,其将压力检测部件的第一电极传递到由按压部件施加的压力。

    MICRO FORCE SENSOR PACKAGE FOR SUB-MILLINEWTON ELECTROMECHANICAL MEASUREMENTS
    85.
    发明申请
    MICRO FORCE SENSOR PACKAGE FOR SUB-MILLINEWTON ELECTROMECHANICAL MEASUREMENTS 审中-公开
    微型力传感器包装用于亚美尼电子电气测量

    公开(公告)号:US20120018821A1

    公开(公告)日:2012-01-26

    申请号:US13262295

    申请日:2010-01-04

    Applicant: Felix Beyeler

    Inventor: Felix Beyeler

    CPC classification number: G01L1/148

    Abstract: A force sensor package includes the following main parts: a MEMS force sensor, an interface circuit converting a change of capacitance into an analog or digital sensor output signal, and a substrate on which the MEMS force sensor and the IC are attached. The interface circuit is a die in order to minimize the size of the force sensor. The MEMS force sensor and the interface circuit are attached to the substrate by an adhesive, e.g. glue. Electrical contacts are then realized by wire-bonding. Alternatively, the two parts may also be attached to the substrate by a flip-chip process using solder. A protective cover may be placed over the assembly.

    Abstract translation: 力传感器封装包括以下主要部分:MEMS力传感器,将电容变化转换为模拟或数字传感器输出信号的接口电路,以及附接有MEMS力传感器和IC的基板。 接口电路是模具,以便最小化力传感器的尺寸。 MEMS力传感器和界面电路通过粘合剂例如粘合剂附着到基底上。 胶。 然后通过引线接合实现电接触。 或者,两个部分也可以通过使用焊料的倒装工艺附着到基板上。 保护盖可以放置在组件上。

    CONTACT FORCE SENSOR
    86.
    发明申请
    CONTACT FORCE SENSOR 有权
    联系力传感器

    公开(公告)号:US20110290037A1

    公开(公告)日:2011-12-01

    申请号:US13147935

    申请日:2010-02-11

    Abstract: A triaxial force sensor including: a deformable membrane; a detector detecting a deformation of the membrane configured to carry out a triaxial detection of the force to be detected; and an adhesion mechanism disposed at least at one of the principal faces of the deformable membrane, configured to secure the one of the principal faces of the deformable membrane to at least one elastomer material to be acted upon by the force to be detected, and distributed uniformly at a whole of the surface of the one of the principal faces of the deformable membrane, the deformable membrane being disposed between a cavity and the elastomer material.

    Abstract translation: 一种三轴力传感器,包括:可变形膜; 检测器,检测被配置为执行待检测的力的三轴检测的膜的变形; 以及粘附机构,其至少设置在所述可变形膜的至少一个所述主面上,所述粘合机构构造成将所述可变形膜的所述主面中的所述一个面固定到待被检测的力作用的至少一种弹性体材料上,并且分布 在可变形膜的一个主面的整个表面上均匀地形成可变形膜,该可变形膜设置在空腔和弹性体材料之间。

    SUB-THRESHOLD ELASTIC DEFLECTION FET SENSOR FOR SENSING PRESSURE/FORCE, A METHOD AND SYSTEM THEREOF
    87.
    发明申请
    SUB-THRESHOLD ELASTIC DEFLECTION FET SENSOR FOR SENSING PRESSURE/FORCE, A METHOD AND SYSTEM THEREOF 失效
    用于传感压力/力的亚阈值弹性偏转场敏感器,其方法和系统

    公开(公告)号:US20110023632A1

    公开(公告)日:2011-02-03

    申请号:US12937638

    申请日:2008-06-19

    CPC classification number: G01L9/0098 B81B3/0072 G01L1/005 G01L1/148 G01L9/0073

    Abstract: The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

    Abstract translation: 本发明涉及高灵敏度弹性偏转传感器,更具体地涉及基于电容耦合FET的弹性偏转传感器。 用于感测压力/力的亚阈值弹性偏转FET传感器包括形成传感器的移动栅极的弹性构件,FET的衬底上的固定电介质,以及弹性构件和固定电介质之间的流体电介质,其中, 由于弹性构件上的压力/力引起的流体介质(TSENS)的高度改变传感器栅极电容。

    Strain sensor
    88.
    发明授权
    Strain sensor 有权
    应变传感器

    公开(公告)号:US07726198B2

    公开(公告)日:2010-06-01

    申请号:US11852608

    申请日:2007-09-10

    CPC classification number: G01B7/22 G01L1/148

    Abstract: A strain sensor comprises a capacitor formed on a substrate, the capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on the substrate, the capacitor being adapted to be mounted upon a specimen, and a measuring circuit that measures a leakage current flowing through the capacitor between the upper electrode and the lower electrode.

    Abstract translation: 应变传感器包括形成在基板上的电容器,所述电容器具有层状结构,其中下电极,钙钛矿结构的金属氧化物膜和上电极在基板上连续层压,电容器适于安装在基板上 试样和测量在上电极和下电极之间流过电容器的漏电流的测量电路。

    MEMS Capacitive Bending and Axial Strain Sensor
    89.
    发明申请
    MEMS Capacitive Bending and Axial Strain Sensor 有权
    MEMS电容弯曲和轴向应变传感器

    公开(公告)号:US20090188325A1

    公开(公告)日:2009-07-30

    申请号:US12393294

    申请日:2009-02-26

    CPC classification number: G01L1/148

    Abstract: A three-dimensional micro-electro-mechanical-systems (MEMS) capacitive bending and axial strain sensor capacitor is described. Two independent comb structures, incorporating suspended polysilicon interdigitated fingers, are fabricated simultaneously on a substrate that can displace independently of each other while attached to a substrate undergoing bending or axial deformation. A change in spacing between the interdigitated fingers will output a change in capacitance of the sensor and is the primary mode of operation of the device. On the bottom and to the end of each comb structure, a glass pad is attached to the comb structure to allow for ample surface area for affixing the sensor to a substrate. During fabrication, tethers are used to connect each comb structure to maintain equal spacing between the fingers before attachment to the substrate. After attachment, the tethers are broken to allow independent movement of each comb structure.

    Abstract translation: 描述了三维微电子机械系统(MEMS)电容弯曲和轴向应变传感器电容器。 两个独立的梳形结构,并入悬浮的多晶硅叉指,同时被制造在基板上,该基板可以在连接到经历弯曲或轴向变形的基板上时彼此独立地移位。 交叉指状物之间的间距变化将输出传感器的电容变化,并且是器件的主要操作模式。 在每个梳结构的底部和末端,玻璃垫连接到梳状结构以允许足够的表面积将传感器固定到基底上。 在制造过程中,系绳用于连接每个梳状结构,以在连接到基底之前在指状物之间保持相等的间隔。 连接后,系绳被破坏以允许每个梳结构的独立移动。

    Micro-electromechanical capacitive strain sensor
    90.
    发明授权
    Micro-electromechanical capacitive strain sensor 有权
    微机电容应变传感器

    公开(公告)号:US07380461B2

    公开(公告)日:2008-06-03

    申请号:US11684592

    申请日:2007-03-09

    Inventor: Suryakala Majeti

    CPC classification number: G01B7/22 G01L1/148 Y10T29/49103 Y10T29/49147

    Abstract: A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.

    Abstract translation: 微机电容应变传感器。 微机电容应变传感器包括第一弯曲梁,第二弯曲梁和直线中心梁。 第一弯曲梁,第二弯曲梁和直线中心梁在X轴上对齐,直线中心梁位于第一和第二弯曲梁之间。 第一弯梁,第二弯梁和直中心梁设置在两个锚之间。 两个锚点在Y轴上对齐。 第一弯曲光束从中心光束弯曲并且第二弯曲光束朝向中心光束弯曲,以相对于中心光束提供一组差分电容器,其中中心光束用作相对于第一光束的共同参考 和第二弯梁。

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