Abstract:
A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.
Abstract:
A microelectromechanical (“MEMS”) load sensor device for measuring a force applied by a human user is described herein. In one aspect, the load sensor device has a contact surface in communication with a touch surface which communicates forces originating on the touch surface to a deformable membrane, on which load sensor elements are arranged, such that the load sensor device produces a signal proportional to forces imparted by a human user along the touch surface. In another aspect, the load sensor device has an overload protection ring to protect the load sensor device from excessive forces. In another aspect, the load sensor device has embedded logic circuitry to allow a microcontroller to individually address load sensor devices organized into an array. In another aspect, the load sensor device has electrical and mechanical connectors such as solder bumps designed to minimize cost of final component manufacturing.
Abstract:
A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.
Abstract:
Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.
Abstract:
A force sensor package includes the following main parts: a MEMS force sensor, an interface circuit converting a change of capacitance into an analog or digital sensor output signal, and a substrate on which the MEMS force sensor and the IC are attached. The interface circuit is a die in order to minimize the size of the force sensor. The MEMS force sensor and the interface circuit are attached to the substrate by an adhesive, e.g. glue. Electrical contacts are then realized by wire-bonding. Alternatively, the two parts may also be attached to the substrate by a flip-chip process using solder. A protective cover may be placed over the assembly.
Abstract:
A triaxial force sensor including: a deformable membrane; a detector detecting a deformation of the membrane configured to carry out a triaxial detection of the force to be detected; and an adhesion mechanism disposed at least at one of the principal faces of the deformable membrane, configured to secure the one of the principal faces of the deformable membrane to at least one elastomer material to be acted upon by the force to be detected, and distributed uniformly at a whole of the surface of the one of the principal faces of the deformable membrane, the deformable membrane being disposed between a cavity and the elastomer material.
Abstract:
The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.
Abstract:
A strain sensor comprises a capacitor formed on a substrate, the capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on the substrate, the capacitor being adapted to be mounted upon a specimen, and a measuring circuit that measures a leakage current flowing through the capacitor between the upper electrode and the lower electrode.
Abstract:
A three-dimensional micro-electro-mechanical-systems (MEMS) capacitive bending and axial strain sensor capacitor is described. Two independent comb structures, incorporating suspended polysilicon interdigitated fingers, are fabricated simultaneously on a substrate that can displace independently of each other while attached to a substrate undergoing bending or axial deformation. A change in spacing between the interdigitated fingers will output a change in capacitance of the sensor and is the primary mode of operation of the device. On the bottom and to the end of each comb structure, a glass pad is attached to the comb structure to allow for ample surface area for affixing the sensor to a substrate. During fabrication, tethers are used to connect each comb structure to maintain equal spacing between the fingers before attachment to the substrate. After attachment, the tethers are broken to allow independent movement of each comb structure.
Abstract:
A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.