Abstract:
A thin-film electron emitter device is provided with a multilayer structure including upper and lower electrodes with an insulative or dielectric layer being sandwiched therebetween. The upper or "top" electrode is itself formed as a multilayer structure. For example, in one embodiment, the upper electrode is formed as a three layer lamination of an interface layer formed on the insulative layer, an intermediate or "middle" layer stacked on the interface layer and a surface layer stacked on or above the middle layer. The middle layer is made of a chosen material which is greater in sublimation enthalpy than the surface layer and yet less than the interface layer. When appropriate, the surface layer may be omitted providing two-layer structure rather than the three-layer structure.
Abstract:
A cold cathode (3) in the form of a solid thin film component is the basis for electron-optical terminal image devices. The thin-film structure is made up of a base electrode (5), e.g., in the form of a bundle of parallel strips, an insulating film (6), a semiconductor film (7) and a covering electrode (8), e.g., also a bundle of parallel strips but running perpendicularly to the base electrode (5) bundle. This set of layers borne on a substrate plate (4), is in an evacuated casing (2) and is opposite a fluorescent screen (12) or a light emitter (15), the metalized coating (11) of which forms the counter-pole for the electron acceleration chamber (9). The main applications of such electron-optical terminal image devices are embodiments as matrix-addressed flat displays, image converters or write/read lines.
Abstract:
A flat panel display includes a ferroelectric thin film between first and second spaced apart electrodes. The ferroelectric thin film emits electrons upon application of a predetermined voltage between the first and second spaced apart electrodes. The electrons are emitted in an electron emission path and impinge upon a luminescent layer such as a phosphor layer, which produces luminescence upon impingement upon the emitter electrodes. The ferroelectric thin film is preferably about 2 .mu.m or less in thickness and is preferably a polycrystalline ferroelectric thin film. More preferably, the thin ferroelectric film is a highly oriented, polycrystalline thin ferroelectric film. Most preferably, highly oriented ferroelectric thin film has a preferred (001) crystal orientation and is about 2 .mu.m or less in thickness. A flat panel display may be formed of arrays of such display elements. Top and bottom electrodes or side electrodes may be used. The display may be formed using conventional microelectronic fabrication steps.
Abstract:
A gas discharge tube using a tunnel effect type electron emitting device as a cathode is provided. The electron emitting device comprises a conductive metal base and a dielectric film formed preferably of a material containing MgO as a main component on the metal base. The dielectric film faces an anode and is exposed to a gas in the tube. In the cathode of this structure, discharge is effected at a relatively low DC voltage.
Abstract:
An electron beam apparatus for applying an electron beam from an electron source onto a target plane is characterized by comprising one sheet of electrode disposed between said electron source for emitting the electron beam in parallel or substantially parallel and a target arrangement position, and a power source for supplying a desired voltage to said electrode.
Abstract:
An MIM type of electron emission element having a thin insulating film formed below an electron emission region of a metal layer, with that electron emission region of the metal layer consisting of an array of thick and thin portions, distributed throughout the electron emission region. Improved efficiency and uniformity of of emission are obtained, due to the low resistance of the thick portions, which apply a supply voltage to the thin portions of the metal layer, while the thin portions can be made sufficiently thin to maximize the electron emission.
Abstract:
A method of producing a tunnel emitter photocathode consisting of heating aemiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.
Abstract:
An electroemissive component having variable emissivity is made up of a conductive substrate on which at least one continuous thin film of a solid organometallic compound has been formed by electrochemical deposition and of a conductive deposit constituted by at least one thin film and deposited on said organometallic film, the substrate and the conductive deposit being electrically connected respectively to the two poles of a variable-voltage source which controls the emissivity. The component is particularly well suited to the fabrication of electronic or optoelectronic devices such as electron tubes, luminescent cells, display panels, thin television screens, and brightness amplifiers.