公开(公告)号：US20240019509A1

公开(公告)日：2024-01-18

申请号：US18251296

申请日：2021-10-28

申请人： CROCUS Technology SA

发明人： Jeffrey Childress ,  Nikita Strelkov ,  Andrey Timopheev

IPC分类号： G01R33/09 ,  G01R33/00 ,  H01F1/00

CPC分类号： G01R33/098 ,  G01R33/093 ,  G01R33/0052 ,  H01F1/0009

摘要： A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

公开(公告)号：US20230134728A1

公开(公告)日：2023-05-04

申请号：US17905278

申请日：2021-02-22

申请人： CROCUS Technology SA

发明人： Robert Zucker ,  Scott Fritz

IPC分类号： G01B7/30 ,  G01D5/14

摘要： Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, including: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd+θ); and an angle extracting unit for measuring the phase delay between the summed signal and a synchronization signal and determining the angle from the phase delay.

公开(公告)号：US20230066027A1

公开(公告)日：2023-03-02

申请号：US17760109

申请日：2021-01-29

申请人： CROCUS Technology SA

发明人： Léa Cuchet ,  Andrey Timopheev ,  Jeffrey Childress

IPC分类号： G01R33/00 ,  G01R33/09

摘要： A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

公开(公告)号：US10914795B2

公开(公告)日：2021-02-09

申请号：US16280480

申请日：2019-02-20

申请人： Crocus Technology Inc.

发明人： Anuraag Mohan

IPC分类号： G01R33/00 ,  G01R33/09

摘要： A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

公开(公告)号：US10460779B2

公开(公告)日：2019-10-29

申请号：US15891233

申请日：2018-02-07

申请人： Crocus Technology Inc.

发明人： Michael Gaidis ,  Thao Tran

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

摘要： An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

公开(公告)号：US10191719B2

公开(公告)日：2019-01-29

申请号：US15552508

申请日：2016-02-22

申请人： CROCUS Technology SA

发明人： Sebastien Bandiera ,  Quentin Stainer

IPC分类号： G06F7/58

摘要： A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US10157652B2

公开(公告)日：2018-12-18

申请号：US15578841

申请日：2016-05-31

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

摘要： A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

公开(公告)号：US10115445B2

公开(公告)日：2018-10-30

申请号：US15741805

申请日：2016-06-27

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02

摘要： A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US10062833B2

公开(公告)日：2018-08-28

申请号：US15516079

申请日：2015-09-24

申请人： CROCUS Technology SA

发明人： Bertrand Cambou

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.

公开(公告)号：US10003014B2

公开(公告)日：2018-06-19

申请号：US14310844

申请日：2014-06-20

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

发明人： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L21/311 ,  H01L43/02 ,  H01L43/10

CPC分类号： H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.