公开(公告)号：US12031232B2

公开(公告)日：2024-07-09

申请号：US17928604

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong Lee ,  Won Sun Baick ,  Dong Ho Kim ,  Moon Chan Kim

IPC分类号： C30B29/32 ,  C01G33/00 ,  C08K3/22 ,  C30B1/12 ,  C30B29/30 ,  H10N30/097 ,  H10N30/85 ,  H10N30/853

CPC分类号： C30B29/32 ,  C01G33/006 ,  C08K3/22 ,  C30B1/12 ,  C30B29/30 ,  H10N30/097 ,  H10N30/8536 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  C08K2003/2244 ,  C08K2201/001

摘要： Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

公开(公告)号：US20230088567A1

公开(公告)日：2023-03-23

申请号：US18071535

申请日：2022-11-29

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Moon Chan KIM

IPC分类号： A61H23/02 ,  B06B1/06

摘要： Provided is an electric field-vibration generating transducer having a piezoelectric material of a high degree of displacement, and a manufacturing method thereof. The electric field-vibration generating transducer lowers the cost of production through miniaturization simultaneously with realizing excellent generating characteristics of the electric field-vibration generating transducer based on high efficiency and low voltage driving because the piezoelectric material of the high degree of displacement (high strain piezoelectrics) having a high piezoelectric constant (d33=1,000 to 6,000 pC/N), a high dielectric constant (K3T=6,000 to 15,000) as well as a low dielectric loss (tan δ

公开(公告)号：US20050150446A1

公开(公告)日：2005-07-14

申请号：US10507819

申请日：2003-10-09

申请人： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

发明人： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

IPC分类号： C30B1/02 ,  C30B1/04 ,  C30B29/32 ,  C30B19/00

CPC分类号： C30B1/02 ,  C30B29/30 ,  C30B29/32

摘要： The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.

摘要翻译： 本发明涉及一种在晶体生长异常的多晶体中生长单晶的方法。 该方法的特征在于控制发生异常晶粒生长的多晶体的基体晶粒的平均尺寸，从而减少异常晶粒的数量密度（异常晶粒数/单位体积），仅产生非常有限数量的异常晶粒或 在保证异常谷物生长的驱动力的程度内抑制异常谷物的产生。 因此，本发明连续生长极限数量的异常晶粒或只将晶种单晶生长到多晶体中，以获得尺寸大于50mm的大单晶。

公开(公告)号：US20230247908A1

公开(公告)日：2023-08-03

申请号：US18007965

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Hyun Jae JOO

IPC分类号： H10N30/85 ,  H10N30/092 ,  C04B35/488 ,  C04B35/626 ,  C04B35/64

CPC分类号： H10N30/852 ,  H10N30/092 ,  C04B35/488 ,  C04B35/6261 ,  C04B35/64 ,  C04B2235/3249 ,  C04B2235/3206 ,  C04B2235/768 ,  C04B2235/786 ,  C04B2235/783 ,  C04B2235/9607 ,  C04B2235/6567 ,  C04B2235/6562

摘要： Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

公开(公告)号：US20080290315A1

公开(公告)日：2008-11-27

申请号：US12092664

申请日：2006-11-06

申请人： Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

发明人： Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

IPC分类号： H01L41/187 ,  C30B15/14

CPC分类号： C30B29/22 ,  C30B1/02 ,  C30B29/30 ,  C30B29/32 ,  H01L41/18

摘要： A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.

摘要翻译： 提供了具有高介电常数K3T，高压电常数（d33和k33），高相变温度（Tc和TRT），高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件， 改进的机械性能，因此可以在高温范围和高电压条件下使用。 此外，压电单晶通过适合大量生产单晶的固态单晶生长产生，并且单晶组合物被开发成不含有昂贵的原料，使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件，可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。

公开(公告)号：US20030015130A1

公开(公告)日：2003-01-23

申请号：US10163526

申请日：2002-06-07

申请人： CERACOMP CO. LTD.

发明人： Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

IPC分类号： C30B001/00

CPC分类号： C30B11/00 ,  C30B29/32

摘要： The invention relates to a method for growing single crystals of barium titanate nullBaTiO3null and barium titanate solid solutions null(BaxM1-x)(TiyN1-y)O3null. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention is also applicable to other material systems showing abnormal grain growth behavior.

摘要翻译： 本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。 本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤 在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。 根据本发明的用于生长钛酸钡或钛酸钡固溶体的单晶的方法具有通过使用常规热处理工艺而不需要特殊设备来提供单晶制造工艺的有效低成本的优点。 根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也适用于显示异常晶粒生长行为的其它材料体系。

公开(公告)号：US20230399769A1

公开(公告)日：2023-12-14

申请号：US17928604

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Moon Chan KIM

IPC分类号： C30B29/32 ,  C01G33/00 ,  C08K3/22 ,  H10N30/853 ,  H10N30/097 ,  C30B29/30 ,  C30B1/12

CPC分类号： C30B29/32 ,  C01G33/006 ,  C08K3/22 ,  H10N30/8536 ,  H10N30/097 ,  C30B29/30 ,  C30B1/12 ,  C01P2002/52 ,  C01P2002/34 ,  C01P2006/40 ,  C08K2003/2244 ,  C08K2201/001

摘要： Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

公开(公告)号：US08202364B2

公开(公告)日：2012-06-19

申请号：US12389117

申请日：2009-02-19

申请人： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

发明人： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Dong-Ho Kim

IPC分类号： C30B15/14 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC分类号： C30B29/30 ,  C30B1/04 ,  C30B29/32

摘要： By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.

摘要翻译： 通过将多晶体的基体晶粒的平均尺寸控制到异常，夸张或不连续晶粒生长结束的临界尺寸，并且小于临界尺寸的两倍，即使没有发生，也可以进行足够实用的大的单晶 仅通过热处理工艺而不使用熔融工艺和特殊装置的多晶体晶粒生长异常，从而允许以低成本大量生产大量单晶，具有高再现可能性。

公开(公告)号：US08119022B2

公开(公告)日：2012-02-21

申请号：US12092664

申请日：2006-11-06

申请人： Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

发明人： Ho-Yong Lee ,  Sung-Min Lee ,  Dong-Ho Kim

IPC分类号： H01L41/18 ,  H01L41/00 ,  C04B35/00

CPC分类号： C30B29/22 ,  C30B1/02 ,  C30B29/30 ,  C30B29/32 ,  H01L41/18

摘要： A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.

摘要翻译： 提供了具有高介电常数K3T，高压电常数（d33和k33），高相变温度（Tc和TRT），高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件， 改进的机械性能，因此可以在高温范围和高电压条件下使用。 此外，压电单晶通过适合大量生产单晶的固态单晶生长产生，并且单晶组合物被开发成不含有昂贵的原料，使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件，可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。

公开(公告)号：US20230329120A1

公开(公告)日：2023-10-12

申请号：US17928608

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Moon Chan KIM ,  Hyun Taek OH ,  Hyun Jae JOO

IPC分类号： H10N30/853 ,  H10N30/074 ,  H10N30/097

CPC分类号： H10N30/8548 ,  H10N30/074 ,  H10N30/097 ,  H10N30/8561

摘要： Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.