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    METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS
    2.
    发明公开
    METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开

    公开(公告)号：US20240175135A1

    公开(公告)日：2024-05-30

    申请号：US18283810

    申请日：2022-03-27

    申请人： TES CO., LTD

    发明人： Sung-Chul CHOI ,  Kwang-Il CHO

    IPC分类号： C23C16/458 ,  C23C16/18 ,  C23C16/46

    CPC分类号： C23C16/4586 ,  C23C16/18 ,  C23C16/463

    摘要： The present disclosure relates to a metal organic chemical vapor deposition apparatus, and more particularly to a metal organic chemical vapor deposition apparatus in which a coil connector through which a coil extension of a heating coil passes is provided in a chamber to improve assemblability and ease of maintenance by disposing, outside the chamber, a connector connecting a feedthrough and the heating coil for heating a substrate.

    PLASMA PROCESSING APPARATUS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号：US20090250443A1

    公开(公告)日：2009-10-08

    申请号：US12143465

    申请日：2008-06-20

    申请人： Sung Ryul KIM

    发明人： Sung Ryul KIM

    IPC分类号： B23K9/00

    CPC分类号： H01L21/67069 ,  H01L21/67265

    摘要： Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.

    摘要翻译： 提供了一种包括室，下电极，上电极和基板传感器的等离子体处理装置。 腔室被配置成提供反应空间。 下电极设置在腔室中的下部区域以在其上安装衬底。 上部电极设置在室中的与下部电极相对的上部区域。 衬底传感器设置在腔室上以感测衬底。 这里，上电极包括安装在电极板的底部的电极板和绝缘板，并且在上电极中形成至少一个引导孔，以将从基板传感器输出的光引向基板。