公开(公告)号：US10076896B2

公开(公告)日：2018-09-18

申请号：US15191410

申请日：2016-06-23

申请人： Alta Devices, Inc.

发明人： Khurshed Sorabji

IPC分类号： B32B37/10 ,  H01L21/677 ,  H01L31/18 ,  B32B37/06 ,  B32B37/14 ,  B32B38/18

CPC分类号： B32B37/1018 ,  B32B37/06 ,  B32B37/1027 ,  B32B37/14 ,  B32B38/1858 ,  B32B2457/12 ,  H01L21/677 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/6776 ,  H01L31/043 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： A method and system for connecting a plurality of materials using pressure and curing is disclosed. The method provides for: a) receiving the plurality of materials on the vacuum conveyor; b) conveying the received plurality of materials from the first location to a second location along the vacuum conveyor; c) applying a predetermined vacuum pressure; and d) curing the compressed plurality of materials. The system comprises a vacuum conveyor for receiving the plurality of materials at a first location, a moving belt adaptively positioned above the vacuum conveyor at a second location and the vacuum conveyor and the moving belt are arranged to be driven in a predetermined relation to one another, a vacuum pressure source for applying a predetermined vacuum pressure creating a force compressing the plurality of materials; and a curing source at a second location for curing the compressed plurality of materials.

公开(公告)号：US20160079121A1

公开(公告)日：2016-03-17

申请号：US14663683

申请日：2015-03-20

申请人： Alta Devices, Inc.

发明人： Khurshed Sorabji ,  Daniel G. Patterson

IPC分类号： H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for separation of semiconductor device cell units from fabricated large-area cell units, together with a corresponding tile unit structure, are provided in which the tile unit is cut along cell unit boundaries while leaving intact a set of specified tab sections distributed along the cell unit boundaries. The tile unit may be a multi-layer composite of a semiconductor layer with a conductive metallic base supported upon a polymer layer and adhered thereto by an adhesive film, wherein tab sections are cut completely through the semiconductor layer and its metallic base from above and may also be cut partially through the polymer layer from below, leaving at least a portion of the polymer layer in place at tab sections. Tile units can be handled such that component cell units are held together by the tab sections, until a physical final separation of selected cell units.

摘要翻译： 提供了一种用于从制造的大面积单元单元分离半导体器件单元单元的方法以及相应的瓦片单元结构，其中瓦片单元沿着单元单元边界被切割，同时保持一整组沿着 单元格单元边界。 瓦片单元可以是半导体层与支撑在聚合物层上并通过粘合剂膜粘合到其上的导电金属基底的多层复合物，其中突片部分从上方完全切割穿过半导体层及其金属基底，并且可以 也可以从下面部分地通过聚合物层切割，使聚合物层的至少一部分在片段处保持就位。 可以处理瓦片单元，使得元件单元单元由凸片部分保持在一起，直到所选单元单元的物理最终分离。

公开(公告)号：US10718051B2

公开(公告)日：2020-07-21

申请号：US15971571

申请日：2018-05-04

申请人： Alta Devices, Inc.

发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/48

摘要： An example method for chemical vapor deposition (CVD) of thin films includes providing a deposition zone in a reaction chamber having a fixed showerhead assembly that introduces CVD reactive gases under positive pressure into the deposition zone. The example method also includes moving a substrate carrier beneath the showerhead assembly in the reaction chamber, the substrate carrier supports and transports at least one substrate within the reaction chamber so as to be subjected to a CVD process by the CVD reactive gases. The example method also includes providing a liner assembly shrouding the deposition zone and including at least one partial enclosure around the deposition zone isolating the deposition zone and the substrate carrier, whereby solid reaction byproducts are plated onto material in the liner assembly and gaseous reaction byproducts flow radially outward, the liner assembly being mounted on the substrate carrier for motion with the substrate carrier.

公开(公告)号：US09859162B2

公开(公告)日：2018-01-02

申请号：US14663683

申请日：2015-03-20

申请人： Alta Devices, Inc.

发明人： Khurshed Sorabji ,  Daniel G. Patterson

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for separation of semiconductor device cell units from fabricated large-area cell units, together with a corresponding tile unit structure, are provided in which the tile unit is cut along cell unit boundaries while leaving intact a set of specified tab sections distributed along the cell unit boundaries. The tile unit may be a multi-layer composite of a semiconductor layer with a conductive metallic base supported upon a polymer layer and adhered thereto by an adhesive film, wherein tab sections are cut completely through the semiconductor layer and its metallic base from above and may also be cut partially through the polymer layer from below, leaving at least a portion of the polymer layer in place at tab sections. Tile units can be handled such that component cell units are held together by the tab sections, until a physical final separation of selected cell units.

公开(公告)号：US10066297B2

公开(公告)日：2018-09-04

申请号：US14924488

申请日：2015-10-27

申请人： Alta Devices, Inc.

发明人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677

摘要： A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

公开(公告)号：US20160130724A1

公开(公告)日：2016-05-12

申请号：US14997890

申请日：2016-01-18

申请人： Alta Devices, Inc.

发明人： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC分类号： C30B25/10 ,  C23C16/01 ,  H05B3/00 ,  C23C16/48

CPC分类号： C30B25/10 ,  C23C16/01 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/482 ,  C23C16/54 ,  C30B25/025 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784 ,  H05B3/0047

摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.

摘要翻译： 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含第一灯座和第二灯座的灯壳，以及从第一 灯架到第二个灯座。 多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以​​交替地设置在第一和第二灯座之间。 反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。 反射器可以包含金或金合金。

公开(公告)号：US20160047042A1

公开(公告)日：2016-02-18

申请号：US14924488

申请日：2015-10-27

申请人： Alta Devices, Inc.

发明人： Gregg Higashi ,  Alexander Lerner ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/67115 ,  H01L21/6776

摘要： A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

摘要翻译： 一种用于由喷头瓦片阵列形成的半导体处理反应器的喷头。 每个喷头瓦具有多个处理气体孔口，其可以在瓦片的中心区域中，或者可以在整个瓦片上延伸。 每个喷头砖的尺寸可以用于处理相应的基板或多个基板，或者该阵列的尺寸可以用于处理基板。 排气区围绕工艺气体孔。 排气区域具有至少一个排气孔，并且可以包括排气槽，多个连接的排气槽或多个排气孔。 排气区域围绕阵列的喷头瓦片，或者排气区域的相应部分围绕每个喷头瓦片或一组喷头瓦片中的多个处理气体孔。 气幕孔可以在排气区域和淋浴喷头瓦片之一的邻近瓦片的中心区域的处理气体孔之间。