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    Method for producing carbon fiber
    1.
    发明授权
    Method for producing carbon fiber 有权
    生产碳纤维的方法

    公开(公告)号：US08404208B2

    公开(公告)日：2013-03-26

    申请号：US12997834

    申请日：2009-06-16

    申请人： Eiji Kambara ,  Akihiro Kitazaki

    发明人： Eiji Kambara ,  Akihiro Kitazaki

    IPC分类号： D01F9/12

    CPC分类号： D01F9/127 ,  B01J21/063 ,  B01J21/185 ,  B01J23/882 ,  B01J23/888 ,  B01J23/8892 ,  B01J37/0201 ,  B01J37/04 ,  B01J37/082 ,  B82Y30/00

    摘要： A method for producing a carbon fiber, comprising a step of dissolving or dispersing [I] a compound containing Co element; [II] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [III] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or a fluid dispersion, a step of impregnating a particulate carrier with the solution or the fluid dispersion to prepare a catalyst, and a step of bringing a carbon source into contact with the catalyst in a vapor phase.

    摘要翻译： 一种碳纤维的制造方法，其特征在于，包括使[I]含有Co元素的化合物溶解或分散的工序; [II]含有选自Ti，V，Cr和Mn中的至少一种元素的化合物; 和[III]在溶剂中含有选自W和Mo中的至少一种元素的化合物以获得溶液或流体分散体，用溶液或流体分散体浸渍颗粒载体以制备催化剂的步骤 以及使气相中的碳源与催化剂接触的工序。

    CARBON FIBER AND CATALYST FOR PRODUCTION OF CARBON FIBER
    2.
    发明申请
    CARBON FIBER AND CATALYST FOR PRODUCTION OF CARBON FIBER 审中-公开
    用于生产碳纤维的碳纤维和催化剂

    公开(公告)号：US20110104490A1

    公开(公告)日：2011-05-05

    申请号：US12997780

    申请日：2009-06-16

    申请人： Eiji Kambara ,  Akihiro Kitazaki

    发明人： Eiji Kambara ,  Akihiro Kitazaki

    IPC分类号： D01F9/12 ,  B01J21/06 ,  B01J23/887 ,  B01J23/888 ,  B01J21/04 ,  B01J27/232 ,  B01J37/02

    CPC分类号： D01F9/127 ,  B01J21/185 ,  B01J23/882 ,  B01J23/888 ,  B01J35/0013 ,  B01J37/0211 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/36 ,  H01M4/383 ,  H01M4/583 ,  H01M4/96 ,  Y10T428/292

    摘要： A catalyst for production of a carbon fiber is obtained by dissolving or dispersing [I] a compound containing Fe element; [II] a compound containing Co element; [III] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [IV] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or a fluid dispersion, and then by impregnating a particulate carrier with the solution or the fluid dispersion. By means of a step of bringing a carbon source into contact with the catalyst in a vapor phase, the carbon fiber is obtained which is tubular and in which a graphite layer is approximately parallel with the carbon fiber axis, and a shell is in a multi-walled structure.

    摘要翻译： 通过将[I]含有Fe元素的化合物溶解或分散而得到碳纤维生产用催化剂。 [II]含有Co元素的化合物; [III]含有选自Ti，V，Cr和Mn中的至少一种元素的化合物; 和[IV]在溶剂中含有选自W和Mo的至少一种元素的化合物，以获得溶液或流体分散体，然后通过用溶液或流体分散体浸渍颗粒载体。 通过在气相中使碳源与催化剂接触的步骤，获得了碳纤维，其是管状的，其中石墨层与碳纤维轴线近似平行，壳体处于多重状态 墙结构。

    METHOD FOR PRODUCING CARBON FIBER
    3.
    发明申请
    METHOD FOR PRODUCING CARBON FIBER 有权
    生产碳纤维的方法

    公开(公告)号：US20110105685A1

    公开(公告)日：2011-05-05

    申请号：US12997834

    申请日：2009-06-16

    申请人： Eiji Kambara ,  Akihiro Kitazaki

    发明人： Eiji Kambara ,  Akihiro Kitazaki

    IPC分类号： C08K3/04 ,  D01F9/12 ,  C08L69/00

    CPC分类号： D01F9/127 ,  B01J21/063 ,  B01J21/185 ,  B01J23/882 ,  B01J23/888 ,  B01J23/8892 ,  B01J37/0201 ,  B01J37/04 ,  B01J37/082 ,  B82Y30/00

    摘要： A method for producing a carbon fiber, comprising a step of dissolving or dispersing [I] a compound containing Co element; [II] a compound containing at least one element selected from the group consisting of Ti, V, Cr, and Mn; and [III] a compound containing at least one element selected from the group consisting of W and Mo in a solvent to obtain a solution or a fluid dispersion, a step of impregnating a particulate carrier with the solution or the fluid dispersion to prepare a catalyst, and a step of bringing a carbon source into contact with the catalyst in a vapor phase.

    摘要翻译： 一种碳纤维的制造方法，其特征在于，包括使[I]含有Co元素的化合物溶解或分散的工序; [II]含有选自Ti，V，Cr和Mn中的至少一种元素的化合物; 和[III]在溶剂中含有选自W和Mo中的至少一种元素的化合物以获得溶液或流体分散体，用溶液或流体分散体浸渍颗粒载体以制备催化剂的步骤 以及使气相中的碳源与催化剂接触的工序。

    Epitaxial wafer for infrared light-emitting device and light-emitting device using the same
    4.
    发明授权
    Epitaxial wafer for infrared light-emitting device and light-emitting device using the same 有权
    用于红外发光装置的外延晶片和使用其的发光装置

    公开(公告)号：US06388274B1

    公开(公告)日：2002-05-14

    申请号：US09594735

    申请日：2000-06-16

    申请人： Atsushi Yoshinaga ,  Junichi Yamamoto ,  Akihiro Kitazaki

    发明人： Atsushi Yoshinaga ,  Junichi Yamamoto ,  Akihiro Kitazaki

    IPC分类号： H01L2715

    CPC分类号： H01L33/30 ,  H01L33/0079 ,  H01L33/305

    摘要： The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type GaAlAs layer; a second n-type GaAlAs layer; an n-type GaAlAs cladding layer; a p-type GaAlAs active layer which has an emission wavelength of 850-900 nm; and a p-type GaAlAs cladding layer, through liquid phase epitaxy, and, subsequently, removing the n-type GaAs substrate. In the epitaxial wafer, the p-type GaAlAs cladding layer has a thickness of 5-30 &mgr;m; the p-type GaAlAs cladding layer has an oxygen concentration of 3×1016 atoms/cm3 or less; the p-type GaAlAs cladding layer has a carrier concentration of 1×1017 cm−3 to 1×1018 cm−3; the p-type GaAlAs active layer has a thickness of 0.05-0.4 &mgr;m; the peak carbon concentration of the portion in the second n-type GaAlAs layer within 2 &mgr;m of the interface between the second n-type GaAlAs layer and the first n-type GaAlAs layer is less than 1×1017 atoms/cm3; the p-type GaAlAs active layer contains germanium as a predominant dopant; the n-type GaAlAs cladding layer has a Ge concentration of 3×1016 atoms/cm3 or less; and the second n-type GaAlAs layer has a Ge concentration of 3×1016 atoms/cm3 or less. The invention provides an epitaxial wafer of double-hetero structure for producing high-intensity GaAlAs infrared LEDs.

    摘要翻译： 本发明提供了通过在n型GaAs衬底上依次形成第一n型GaAlAs层而获得的外延晶片; 第二n型GaAlAs层; n型GaAlAs覆层; 具有发射波长850-900nm的p型GaAlAs有源层; 和p型GaAlAs覆层，通过液相外延，随后除去n型GaAs衬底。 在外延晶片中，p型GaAlAs覆层的厚度为5-30μm; p型GaAlAs包层的氧浓度为3×1016原子/ cm3以下; p型GaAlAs覆层的载流子浓度为1×10 17 cm -3至1×10 18 cm -3; p型GaAlAs活性层的厚度为0.05-0.4μm; 在第二n型GaAlAs层和第一n型GaAlAs层之间的界面的2μm内的第二n型GaAlAs层中的部分的峰值碳浓度小于1×10 17原子/ cm 3; p型GaAlAs活性层含有锗作为主要掺杂剂; n型GaAlAs覆盖层的Ge浓度为3×1016原子/ cm3以下， 第二n型GaAlAs层的Ge浓度为3×1016原子/ cm3以下。 本发明提供了一种用于生产高强度GaAlAs红外LED的双异质结构的外延晶片。