公开(公告)号：US07435668B2

公开(公告)日：2008-10-14

申请号：US11039996

申请日：2005-01-24

申请人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

发明人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

IPC分类号： H01L21/225

CPC分类号： H01L29/66757 ,  H01L27/1292 ,  H01L29/78618

摘要： A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.

摘要翻译： 将含有杂质离子的溶液施加到硅膜的表面上以形成溶液层，然后干燥成含有杂质的化合物层。 通过用能量束的照射进行热处理，以使化合物层中的杂质原子朝向硅膜扩散到源区和漏区。 随后，除去化合物层。

公开(公告)号：US20080241981A1

公开(公告)日：2008-10-02

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20070212860A1

公开(公告)日：2007-09-13

申请号：US11684908

申请日：2007-03-12

申请人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

发明人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed, wherein the semiconductor thin film is completely melted and the irradiation conditions of the energy beam are so set that the semiconductor thin film at a central position of the energy beam is finally crystallized in association with the scanning with the energy beam.

摘要翻译： 提供了一种使半导体薄膜结晶的方法。 该方法包括在以给定速度扫描的同时在半导体薄膜上连续照射能量束，其中半导体薄膜完全熔化，能量束的照射条件如此设定，使得半导体薄膜位于 能量束最终与能量束的扫描相结合。

公开(公告)号：US06953754B2

公开(公告)日：2005-10-11

申请号：US10478888

申请日：2002-06-04

申请人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Akio Machida ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： B32B7/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/822 ,  H01L27/04 ,  H01L29/786 ,  H01L31/04 ,  H01L21/31

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： The invention provides a functional device having no cracks and capable of delivering good functional characteristics and a method of manufacturing the same. A functional layer (14) is formed by crystallizing an amorphous silicon layer as a precursor layer by laser beam irradiation. A laser beam irradiation conducts heat up to a substrate (11) to cause it to try to expand; a stress to be produced by the difference in thermal expansion coefficient between the substrate (11) and the functional layer (14) is shut off by an organic polymer layer (12) lower in thermal expansion coefficient than the substrate (11), thereby causing no cracks nor separations in the functional layer (14). The organic polymer layer (12) is preferably made of an acrylic resin, an epoxy resin, or a polymer material containing these that is deformed by an optical or thermal process to undergo a three-dimensional condensation polymerization, for higher compactness and hardness. Inserting a metal layer and an inorganic heat resistant layer between the substrate (11) and the functional layer (14) will permit a more powerful laser irradiation.

摘要翻译： 本发明提供了一种没有裂纹并且能够提供良好的功能特性的功能装置及其制造方法。 通过激光束照射使非晶硅层作为前体层结晶而形成功能层（14）。 激光束照射将热量传导到衬底（11）以使其试图膨胀; 由基板（11）和功能层（14）之间的热膨胀系数的差异产生的应力由热膨胀系数低于基板（11）的有机聚合物层（12）切断，从而导致 在功能层（14）中没有裂纹或分离。 有机聚合物层（12）优选由丙烯酸树脂，环氧树脂或包含它们的聚合物材料制成，这些材料通过光学或热过程变形以进行三维缩聚，以获得更高的紧凑性和硬度。 在基板（11）和功能层（14）之间插入金属层和无机耐热层将允许更强大的激光照射。

公开(公告)号：US20050181566A1

公开(公告)日：2005-08-18

申请号：US11039996

申请日：2005-01-24

申请人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

发明人： Akio Machida ,  Takahiro Kamei ,  Yoshiyuki Kawana

IPC分类号： H01L21/225 ,  H01L21/20 ,  H01L21/22 ,  H01L21/336 ,  H01L21/38 ,  H01L21/77 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L27/1292 ,  H01L29/78618

摘要： A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.

摘要翻译： 将含有杂质离子的溶液施加到硅膜的表面上以形成溶液层，然后干燥成含有杂质的化合物层。 通过用能量束的照射进行热处理，以使化合物层中的杂质原子朝向硅膜扩散到源区和漏区。 随后，除去化合物层。

公开(公告)号：US20050092358A1

公开(公告)日：2005-05-05

申请号：US10999049

申请日：2004-11-29

申请人： Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

发明人： Akio Machida ,  Setsuo Usui ,  Kazumasa Nomoto

IPC分类号： H01L31/00 ,  H01L31/0368

CPC分类号： H01L31/03682 ,  Y02E10/546

摘要： An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5, formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6, formed on the first impurity doped semiconductor layer 5, and which is of a hydrogen-containing amorphous semiconductor material, and a second impurity doped semiconductor layer 7, admixed with a second impurity and formed on the optically active semiconductor layer 6. The second impurity doped semiconductor layer is of a polycrystallized semiconductor material lower in hydrogen concentration than the material of the optically active semiconductor layer 6. The average crystal grain size in the depth-wise direction in an interfacing structure between the optically active semiconductor layer 6 and the second impurity doped semiconductor layer 7 is decreased stepwise in a direction proceeding from the surface of the second impurity doped semiconductor layer towards the substrate 1. By controlling the hydrogen concentration of the second impurity doped semiconductor layer 7, the number of dangling bonds in the second impurity doped semiconductor layer 7 is significantly decreased to exhibit superior crystallinity to improve the conversion efficiency of the apparatus 10.

摘要翻译： 光能转换装置10包括形成在基板上的第一杂质掺杂半导体层5，其是与第一杂质混合的半导体材料，形成在第一杂质掺杂半导体层5上的光学活性层6，以及 其是含氢非晶半导体材料，和第二杂质掺杂半导体层7，与第二杂质混合并形成在光学活性半导体层6上。 第二杂质掺杂半导体层是多晶半导体材料，其氢浓度低于光学活性半导体层6的材料。 在光学活性半导体层6和第二杂质掺杂半导体层7之间的界面结构中的深度方向上的平均晶粒尺寸在从第二杂质掺杂半导体层的表面朝向衬底的方向上逐步降低 1。 通过控制第二杂质掺杂半导体层7的氢浓度，第二杂质掺杂半导体层7中的悬挂键数量显着降低，以显示出优异的结晶度，从而提高了装置10的转换效率。

公开(公告)号：US06794277B2

公开(公告)日：2004-09-21

申请号：US10204167

申请日：2002-10-23

申请人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

发明人： Akio Machida ,  Setsuo Usui ,  Dharam Pal Gosain

IPC分类号： H01L2126

CPC分类号： H01L29/66757 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/268 ,  H01L29/78621 ,  Y10S438/914 ,  Y10S438/923

摘要： A lower concentration impurity diffusion region can be formed under excellent control, even when a low heat-resistant substrate is used. At the time of doping a semiconductor layer, a mask such as sidewalls (24) where an energy beam passes through, is formed on a part of a surface of a semiconductor layer (21), dopant ions (25) are adsorbed on the surface of the semiconductor layer (21) except a region in which the mask is formed, and an energy beam EBL is irradiated onto the semiconductor layer (21) having the formed mask to introduce the dopant ions into the semiconductor layer (21). In the lower part of the mask such sidewalls (24), diffusion in transverse direction occurs and lower concentration impurity diffusion regions can be formed in excellent reproducibility under excellent control.

摘要翻译： 即使使用低耐热性基板，也可以在优异的控制下形成浓度较低的杂质扩散区域。 在掺杂半导体层时，在半导体层（21）的表面的一部分上形成诸如能量束通过的侧壁（24）的掩模，掺杂离子（25）被吸附在表面 除了形成有掩模的区域之外的半导体层（21）和能量束EBL被照射到具有形成的掩模的半导体层（21）上以将掺杂剂离子引入到半导体层（21）中。 在掩模的下部，这样的侧壁（24）发生横向扩散，并且在优异的控制下可以以优异的再现性形成较低浓度的杂质扩散区域。

公开(公告)号：US06174463B1

公开(公告)日：2001-01-16

申请号：US09048050

申请日：1998-03-26

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： H01B108

CPC分类号： C30B25/22 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

摘要： A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2±0.17)/(m−1) including the stoichiometric composition ratio 2/(m−1), where m is an integer from, and including, 2 to 5.

摘要翻译： 包含铋（Bi），第一元素，第二元素和氧（O）的层结晶氧化物和包含它的记忆元件，其中第一元素是选自由钠（Na）， 钾（K），钙（Ca），钡（Ba），锶（Sr），铅（Pb）和铋（Bi）中的至少一种，第二元素是选自铁（Fe） （Ti），铌（Nb），钽（Ta）和钨（W），铋相对于第二元素的组成比大于化学计量组成比，其中，铋与 相对于第一元素在包括化学计量组成比2 /（m-1）的（2±0.17）/（m-1）的范围内，其中m是从2到5的整数。

公开(公告)号：US6106616A

公开(公告)日：2000-08-22

申请号：US149712

申请日：1998-09-09

申请人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

发明人： Akio Machida ,  Naomi Nagasawa ,  Takaaki Ami ,  Masayuki Suzuki

IPC分类号： C30B23/02 ,  C30B25/22 ,  C30B23/06

CPC分类号： C30B25/22 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225

摘要： A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.

摘要翻译： 一种晶体结构氧化物的制造方法，包括以下步骤：通过加热材料来蒸发材料以产生气相，并在沉淀部分从气相析出晶体，从而产生层状结晶氧化物。 在大于或等于约10mm至约30mm的范围内远离材料提供沉淀部分。

公开(公告)号：US5777977A

公开(公告)日：1998-07-07

申请号：US701687

申请日：1996-08-22

申请人： Ichiro Fujiwara ,  Akio Machida ,  Shigeru Kojima

发明人： Ichiro Fujiwara ,  Akio Machida ,  Shigeru Kojima

IPC分类号： G01Q60/10 ,  G01Q60/30 ,  G01Q80/00 ,  G11B9/00 ,  G11B9/02 ,  G11B9/06 ,  G11B9/08 ,  G11B9/14 ,  G11B11/08 ,  G11B7/00

CPC分类号： B82Y10/00 ,  G11B11/08 ,  G11B9/02 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  Y10S977/947

摘要： A recording and reproducing apparatus has a recording and/or reading head having a tip for recording and/or reproducing information on and/or from a recording medium. Information is recorded and/or erased by way of a polarization reversal or transport of electric charges in a predetermined area of the recording medium in response to application of a pulse voltage from the head. The information recorded in the predetermined area is detected as a change in the electric charges or an electrostatic capacitance or a surface potential or their differential in the predetermined area for reproducing the information.

摘要翻译： 记录和再现设备具有记录和/或读取头，其具有用于在和/或从记录介质记录和/或再现信息的提示。 响应于来自头部的脉冲电压的应用，通过在记录介质的预定区域中的电荷的极化反转或传输来记录和/或擦除信息。 记录在预定区域中的信息被检测为用于再现信息的电荷或静电电容或表面电位或其在预定区域中的差异的变化。