Semiconductor device with protecting film and method of fabricating the semiconductor device with protecting film
    3.
    发明授权
    Semiconductor device with protecting film and method of fabricating the semiconductor device with protecting film 有权
    具有保护膜的半导体器件和制造具有保护膜的半导体器件的方法

    公开(公告)号:US08410600B2

    公开(公告)日:2013-04-02

    申请号:US12876614

    申请日:2010-09-07

    IPC分类号: H01L29/41

    摘要: Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.

    摘要翻译: 提供半导体器件和制造半导体器件的方法,该半导体器件包括:源极迹线,漏极迹线和置于衬底上的栅极迹线; 放置在漏极迹线上并包括源极焊盘和栅极焊盘的晶体管; 绝缘膜放置在漏极和源极之间以及衬底上的漏极和栅极迹线之间,以覆盖晶体管的侧壁表面; 源极喷射电极,放置在源极和漏极迹线之间的绝缘膜上,并连接晶体管的源极焊盘和源极迹线; 以及栅极喷射电极,其放置在栅极和漏极迹线之间的绝缘膜上,并连接晶体管的栅极焊盘和栅极迹线。