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    Materials for chemical mechanical polishing
    2.
    发明授权
    Materials for chemical mechanical polishing 有权
    化学机械抛光材料

    公开(公告)号：US07429210B2

    公开(公告)日：2008-09-30

    申请号：US11626014

    申请日：2007-01-23

    申请人： Benjamin A. Bonner ,  Peter McReynolds ,  Gregory E. Menk ,  Anand N. Iyer ,  Gopalakrishna B. Prabhu ,  Erik S. Rondum ,  Robert L. Jackson ,  Garlen Leung

    发明人： Benjamin A. Bonner ,  Peter McReynolds ,  Gregory E. Menk ,  Anand N. Iyer ,  Gopalakrishna B. Prabhu ,  Erik S. Rondum ,  Robert L. Jackson ,  Garlen Leung

    IPC分类号： B24D11/00

    CPC分类号： B24D11/00 ,  B24B7/228 ,  B24D2203/00

    摘要： A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

    摘要翻译： 公开了一种用于制造用于化学机械抛光工艺的抛光制品的抛光制品和方法。 抛光制品具有由在抛光材料中或通过抛光材料形成的凹槽分开的多个抛光材料砖，并且可以粘合地结合到基膜上。 抛光制品可以包括在抛光材料中形成的各种多边形瓦片和椭圆形形状，其允许增强的浆料保持性并且容易地从研磨材料供给辊滚动到卷筒纸型压板组件中的卷取辊上。 抛光制品还可以包括适于最小化抛光制品的不适于抛光的区域中的分层应力的上载体薄膜。 还公开了用于制造抛光制品和替换供应辊的各种实施例的方法和装置。

    SELECTIVE CHEMISTRY FOR FIXED ABRASIVE CMP
    7.
    发明申请
    SELECTIVE CHEMISTRY FOR FIXED ABRASIVE CMP 审中-公开
    固定磨料CMP的选择性化学

    公开(公告)号：US20080182413A1

    公开(公告)日：2008-07-31

    申请号：US11839048

    申请日：2007-08-15

    申请人： GREGORY E. MENK ,  Robert L. Jackson ,  Garlen C. Leung ,  Gopalakrishna B. Prabhu ,  Peter McReynolds ,  Anand N. Iyer

    发明人： GREGORY E. MENK ,  Robert L. Jackson ,  Garlen C. Leung ,  Gopalakrishna B. Prabhu ,  Peter McReynolds ,  Anand N. Iyer

    IPC分类号： H01L21/461 ,  C09K13/00

    CPC分类号： H01L21/31053 ,  C09G1/04

    摘要： Methods and compositions for planarizing a substrate surface with selective removal rates and low dishing are provided. One embodiment provides a method for selectively removing a dielectric disposed on a substrate having at least a first and a second dielectric material disposed thereon. The method generally includes positioning the substrate in proximity with a fixed abrasive polishing pad, dispensing an abrasive free polishing composition having at least one organic compound and a surfactant therein between the substrate and the polishing pad, and selectively polishing the second dielectric material relative to the first dielectric material.

    摘要翻译： 提供了具有选择性去除速率和低凹陷来平坦化衬底表面的方法和组合物。 一个实施例提供一种用于选择性地去除布置在其上布置有至少第一和第二介电材料的基板上的电介质的方法。 该方法通常包括将基板定位在固定的研磨抛光垫附近，在衬底和抛光垫之间分配具有至少一种有机化合物和表面活性剂的无研磨抛光组合物，并相对于该抛光垫选择性抛光第二介电材料 第一介电材料。

    Materials for chemical mechanical polishing
    8.
    发明授权
    Materials for chemical mechanical polishing 有权
    化学机械抛光材料

    公开(公告)号：US07179159B2

    公开(公告)日：2007-02-20

    申请号：US11119682

    申请日：2005-05-02

    申请人： Benjamin A. Bonner ,  Peter McReynolds ,  Gregory E. Menk ,  Anand N. Iyer ,  Gopalakrishna B. Prabhu ,  Erik S. Rondum ,  Robert L. Jackson ,  Garlen Leung

    发明人： Benjamin A. Bonner ,  Peter McReynolds ,  Gregory E. Menk ,  Anand N. Iyer ,  Gopalakrishna B. Prabhu ,  Erik S. Rondum ,  Robert L. Jackson ,  Garlen Leung

    IPC分类号： B24D11/00

    CPC分类号： B24D11/00 ,  B24B7/228 ,  B24D2203/00

    摘要： A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

    摘要翻译： 公开了一种用于制造用于化学机械抛光工艺的抛光制品的抛光制品和方法。 抛光制品具有由在抛光材料中或通过抛光材料形成的凹槽分开的多个抛光材料砖，并且可以粘合地结合到基膜上。 抛光制品可以包括在抛光材料中形成的各种多边形瓦片和椭圆形形状，其允许增强的浆料保持性并且容易地从研磨材料供给辊滚动到卷筒纸型压板组件中的卷取辊上。 抛光制品还可以包括适于最小化抛光制品的不适于抛光的区域中的分层应力的上载体薄膜。 还公开了用于制造抛光制品和替换供应辊的各种实施例的方法和装置。

    Method and etchant to join ag-clad BSSCO superconducting tape
    9.
    发明授权
    Method and etchant to join ag-clad BSSCO superconducting tape 失效
    方法和蚀刻剂加入包覆的BSSCO超导胶带

    公开(公告)号：US5882536A

    公开(公告)日：1999-03-16

    申请号：US541210

    申请日：1995-10-12

    申请人： Uthamalingam Balachandran ,  Anand N. Iyer ,  Jiann Yuan Huang

    发明人： Uthamalingam Balachandran ,  Anand N. Iyer ,  Jiann Yuan Huang

    IPC分类号： H01L39/02 ,  H01L21/302

    CPC分类号： H01L39/02

    摘要： A method of removing a silver cladding from high temperature superconducting material clad in silver (HTS) is disclosed. The silver clad HTS is contacted with an aqueous solution of HNO.sub.3 followed by an aqueous solution of NH.sub.4 OH and H.sub.2 O.sub.2 for a time sufficient to remove the silver cladding from the superconducting material without adversely affecting the superconducting properties of the superconducting material. A portion of the silver cladding may be masked with a material chemically impervious to HNO.sub.3 and to a combination of NH.sub.4 OH and H.sub.2 O.sub.2 to preserve the Ag coating. A silver clad superconductor is disclosed, made in accordance with the method discussed.

    摘要翻译： 公开了一种从包覆银（HTS）的高温超导材料中去除银包层的方法。 银包覆HTS与HNO 3的水溶液接触，然后与NH 4 OH和H 2 O 2的水溶液接触足以从超导材料中除去银包层的时间，而不会不利地影响超导材料的超导性质。 银包层的一部分可以用化学上不透HNO 3的材料和NH 4 OH和H 2 O 2的组合来掩蔽以保护Ag涂层。 公开了根据所讨论的方法制成的银包覆超导体。