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公开(公告)号：US20120223432A1
公开(公告)日：2012-09-06
申请号：US13037836
申请日：2011-03-01
CPC分类号： H01L24/85 , H01L23/3157 , H01L23/3192 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05 , H01L2224/05556 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48453 , H01L2224/48458 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48599 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/48824 , H01L2224/85205 , H01L2224/85207 , H01L2224/8592 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01327 , H01L2924/181 , H01L2924/20104 , H01L2924/20105 , H01L2924/206 , H01L2924/2064 , H01L2924/00014 , H01L2924/06 , H01L2924/05042 , H01L2924/00 , H01L2924/00015
摘要： An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface
摘要翻译： 一种电子器件，包括在衬底上的接合焊盘和结合到接合焊盘的引线。 该装置还包括位于接合焊盘和导线之间的金属间化合物界面和覆盖金属间化合物界面的氮化硅或硅羰基层
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2.发明授权Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits 有权电磁辐射诱发的硅同轴异质或形态变化，用于集成电路的电阻转向公开(公告)号：US08610215B2
公开(公告)日：2013-12-17
申请号：US13119005
申请日：2008-09-19
IPC分类号： H01L33/16
CPC分类号： H01L28/20 , H01L21/268 , H01L21/76888 , H01L21/76892 , H01L23/5228 , H01L23/5254 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
摘要翻译： 电子器件包括半导体衬底和衬底上的电介质层。 位于衬底上方的电阻链路包括第一电阻区域和第二电阻区域。 第一电阻区具有第一电阻率和第一形态。 第二电阻区具有第二电阻率和不同的第二形态。
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公开(公告)号：US08766436B2
公开(公告)日：2014-07-01
申请号：US13037836
申请日：2011-03-01
IPC分类号： H01L23/485
CPC分类号： H01L24/85 , H01L23/3157 , H01L23/3192 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05 , H01L2224/05556 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48453 , H01L2224/48458 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/48599 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/48824 , H01L2224/85205 , H01L2224/85207 , H01L2224/8592 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01327 , H01L2924/181 , H01L2924/20104 , H01L2924/20105 , H01L2924/206 , H01L2924/2064 , H01L2924/00014 , H01L2924/06 , H01L2924/05042 , H01L2924/00 , H01L2924/00015
摘要： An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface.
摘要翻译： 一种电子器件，包括在衬底上的接合焊盘和结合到接合焊盘的引线。 该装置还包括位于接合焊盘和导线之间的金属间化合物界面和覆盖金属间化合物界面的氮化硅或硅羰基层。
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4.发明申请ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS 有权通过电磁辐射诱发的电感的电化学或形态变化对集成电路的电阻转换公开(公告)号：US20110163419A1
公开(公告)日：2011-07-07
申请号：US13119005
申请日：2008-09-19
CPC分类号： H01L28/20 , H01L21/268 , H01L21/76888 , H01L21/76892 , H01L23/5228 , H01L23/5254 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
摘要翻译： 电子器件包括半导体衬底和衬底上的电介质层。 位于衬底上方的电阻链路包括第一电阻区域和第二电阻区域。 第一电阻区具有第一电阻率和第一形态。 第二电阻区具有第二电阻率和不同的第二形态。
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