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公开(公告)号:US20060268059A1
公开(公告)日:2006-11-30
申请号:US11138775
申请日:2005-05-26
申请人: Carl Wu , Erik Torniainen , Mark Taylor
发明人: Carl Wu , Erik Torniainen , Mark Taylor
IPC分类号: B41J2/135
CPC分类号: B41J2/1433 , B41J2/1606
摘要: A fluid delivery system includes a plurality of nozzles having an outer surface and a bore. A hydrophobic layer is applied to a portion of the outer surface of the nozzle and extends into the nozzle bore a determined distance.
摘要翻译: 流体输送系统包括具有外表面和孔的多个喷嘴。 将疏水层施加到喷嘴的外表面的一部分并且以确定的距离延伸到喷嘴孔中。
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公开(公告)号:US6162589A
公开(公告)日:2000-12-19
申请号:US33987
申请日:1998-03-02
申请人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
发明人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
CPC分类号: B41J2/1639 , B41J2/1404 , B41J2/14072 , B41J2/1408 , B41J2/14129 , B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/164 , B41J2/1645 , B41J2002/14387 , B41J2002/14475
摘要: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.
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公开(公告)号:US20060274116A1
公开(公告)日:2006-12-07
申请号:US11142225
申请日:2005-06-01
申请人: Carl Wu
发明人: Carl Wu
IPC分类号: B41J2/135
CPC分类号: B41J2/1606
摘要: A method for coating select portions of a liquid jetting assembly with a hydrophobic coating comprises the steps of establishing a first pressure inside of an ink chamber of the jetting assembly; establishing a second pressure outside of the ink chamber of the jetting assembly, the inside and the outside being fluidly communicable with one another by an ink delivery channel; and introducing a composition capable of forming a hydrophobic coating outside of the ink chamber. The second pressure can facilitate formation of the hydrophobic coating on an outer surface of the liquid jetting assembly, and the first pressure can restrict the hydrophobic coating from being formed within the ink chamber.
摘要翻译: 用疏水涂层涂覆液体喷射组件的选择部分的方法包括以下步骤:在喷射组件的墨水室内建立第一压力; 在喷射组件的墨室外部建立第二压力,内部和外部通过油墨输送通道彼此流体连通; 并引入能够在墨水室外形成疏水涂层的组合物。 第二压力可以有助于在液体喷射组件的外表面上形成疏水涂层,并且第一压力可以限制在油墨室内形成疏水涂层。
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公开(公告)号:US06902259B2
公开(公告)日:2005-06-07
申请号:US10165508
申请日:2002-06-06
申请人: Chien-Hua Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Colby Van Vooren , Colin C Davis , Richard W Seaver , Carl Wu , Jeffery S Hess
发明人: Chien-Hua Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Colby Van Vooren , Colin C Davis , Richard W Seaver , Carl Wu , Jeffery S Hess
CPC分类号: B41J2/1639 , B41J2/1404 , B41J2/14072 , B41J2/1408 , B41J2/14129 , B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/164 , B41J2/1645 , B41J2002/14387 , B41J2002/14475
摘要: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.
摘要翻译: 一种在半导体衬底中产生和使用成形孔的装置的方法。 将第一层材料施加在半导体衬底上,然后将第二层材料施加在第一层材料上。 然后将孔口图像转移到第一层材料,并将流体井图像转移到第二层材料。 孔口图像所在的第二层材料的那部分然后与位于流体井的第一材料层的那部分一起显影,以在衬底中限定孔口。
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公开(公告)号:US06520627B2
公开(公告)日:2003-02-18
申请号:US10062807
申请日:2002-02-01
申请人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
发明人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
IPC分类号: B41J205
CPC分类号: B41J2/1639 , B41J2/1603 , B41J2/162 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1645
摘要: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.
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公开(公告)号:US06447102B1
公开(公告)日:2002-09-10
申请号:US09605081
申请日:2000-06-26
申请人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
发明人: Chien-Hau Chen , Donald E. Wenzel , Qin Liu , Naoto Kawamura , Richard W. Seaver , Carl Wu , Colby Van Vooren , Jeffery S. Hess , Colin C. Davis
IPC分类号: B41J205
CPC分类号: B41J2/1639 , B41J2/1404 , B41J2/14072 , B41J2/1408 , B41J2/14129 , B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/164 , B41J2/1645 , B41J2002/14387 , B41J2002/14475
摘要: A process for creating and an apparatus employing shaped orifices in a semiconductor substrate. A first layer of material is applied on the semiconductor substrate then a second layer of material is then applied upon the first layer of material. An orifice image is then transferred to the first layer of material and a fluid-well image is transferred to the second layer of material. That portion of the second layer of material where the orifice image is located is then developed along with that portion of the first layer of material where the fluid well is located to define an orifice in the substrate.
摘要翻译: 一种在半导体衬底中产生和使用成形孔的装置的方法。 将第一层材料施加在半导体衬底上,然后将第二层材料施加在第一层材料上。 然后将孔口图像转移到第一层材料,并将流体井图像转移到第二层材料。 孔口图像所在的第二层材料的那部分然后与位于流体井的第一材料层的那部分一起显影,以在衬底中限定孔口。
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公开(公告)号:US5756343A
公开(公告)日:1998-05-26
申请号:US178477
申请日:1994-01-07
申请人: Carl Wu , Joachim Clos , J. Timothy Westwood , Sridhar Rabindran
发明人: Carl Wu , Joachim Clos , J. Timothy Westwood , Sridhar Rabindran
IPC分类号: A61K39/395 , C07K7/06 , C07K7/08 , C07K14/00 , C07K14/435 , C07K14/47 , C07K16/00 , C07K16/18 , C07K19/00 , C12N1/21 , C12N15/09 , C12N15/67 , C12P21/02 , C12P21/08 , C12Q1/68 , C12R1/19 , G01N33/53 , G01N33/577 , C12N15/12 , C12N15/63
CPC分类号: C12Q1/6876 , C07K14/43581 , C07K14/47 , C07K16/18 , C12N15/67
摘要: The present invention relates to DNA sequence coding for part or all of the heat shock transcription factor or heat shock factor (HSF) proteins derived from humans and Drosophila, and the proteins encoded by these sequences. The present invention also includes methods for detecting HSF in a biological sample. The presence of HSF in the nucleus of a cell can be detected with specific anti-HSF antibody reagents. The presence of such HSF proteins in the nucleus indicates a stressed condition including diseases. Furthermore, the presence of multimeric HSF in the crude or fractionated cell extract is indicative of a stressed state.
摘要翻译: 本发明涉及编码部分或全部来自人和果蝇的热休克转录因子或热休克因子(HSF)蛋白的DNA序列和由这些序列编码的蛋白质。 本发明还包括用于检测生物样品中HSF的方法。 可以用特异性抗-HSF抗体试剂检测HSF在细胞核中的存在。 核中存在这样的HSF蛋白表示包括疾病在内的应激状态。 此外,粗制或分级细胞提取物中多聚体HSF的存在表示应激状态。
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