公开(公告)号：US20110259387A1

公开(公告)日：2011-10-27

申请号：US13092122

申请日：2011-04-21

申请人： Chan Shin WU ,  Tsung-Pei CHIN ,  Yung-Yi TU

发明人： Chan Shin WU ,  Tsung-Pei CHIN ,  Yung-Yi TU

IPC分类号： H01L31/042 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/0725 ,  H01L31/068 ,  H01L31/0735 ,  H01L31/1804 ,  H01L31/1852 ,  H01L31/1896 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A multi-junction solar cell structure includes a supporting substrate, a Group IV element-based thin film, and a Group III-V element-based thin film sequentially stacked on the supporting substrate. When the multi-junction solar cell structure is active, the Group III-V element-based thin film contacts the light before the Group IV element-based thin film does. The Group IV element-based thin film includes a first solar cell and the Group III-V element-based thin film includes a second solar cell, wherein the band gap of the first solar cell is lower than the band gap of the second solar cell.

摘要翻译： 多结太阳能电池结构包括依次堆叠在支撑基板上的支撑基板，IV族元件基薄膜和III-V族元素基薄膜。 当多结太阳能电池结构有效时，III-V族元素基薄膜在IV族元素基薄膜之前与光接触。 IV族元素类薄膜包括第一太阳能电池，第III-V族元素基薄膜包括第二太阳能电池，其中第一太阳能电池的带隙低于第二太阳能电池的带隙 。

公开(公告)号：US06534783B1

公开(公告)日：2003-03-18

申请号：US09819186

申请日：1993-11-15

申请人： Chan-Shin Wu ,  Cheng P. Wen

发明人： Chan-Shin Wu ,  Cheng P. Wen

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01L31/035236

摘要： A radiation detector, particularly suited for the detection of long wavelength infrared radiation, employs a plurality of multiple quantum well (MQW) superlattices in a unitary stack. The superlattices are electrically connected in parallel, and current outputs are obtained from the parallel connection as an indication of the incident radiation. Electrical contact layers are provided on the opposite sides of each superlattice, with adjacent superlattices sharing a common contact layer. The number of quantum well/barrier layer periods per superlattice is preferably reduced to about 20-30 divided by the number of superlattices in the stack, as compared to a single-superlattice detector with about 20-30 periods. This allows a common bias voltage applied to the superlattices to be similarly reduced by a factor approximately equal to the number of superlattices in the stack. The reduction in superlattice thickness and bias voltage yields a higher external quantum efficiency, improved signal-to-noise ratio and lower power consumption. The detector can be implemented either as a single color system with similar superlattices, or as a multi-color system in which each superlattice is tuned to a different radiation waveband.

摘要翻译： 特别适用于长波长红外辐射检测的辐射探测器在整体叠层中采用多个多量子阱（MQW）超晶格。 超晶格并联电连接，电流输出作为入射辐射的指示从并联获得。 电接触层设置在每个超晶格的相对侧上，相邻的超晶格共享共同的接触层。 与具有约20-30个周期的单超晶格检测器相比，每个超晶格的量子阱/势垒层周期的数量优选地减小到约20-30除以堆叠中的超晶格数。 这允许施加到超晶格的公共偏置电压类似地减小大约等于堆叠中的超晶格数量的因子。 超晶格厚度和偏置电压的降低产生更高的外部量子效率，改善的信噪比和更低的功耗。 检测器可以被实现为具有类似超晶格的单色系统，或者作为多色系统，其中每个超晶格被调谐到不同的辐射波段。

公开(公告)号：US5272356A

公开(公告)日：1993-12-21

申请号：US792519

申请日：1991-11-12

申请人： Cheng P. Wen ,  Chan-Shin Wu

发明人： Cheng P. Wen ,  Chan-Shin Wu

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L31/00

CPC分类号： B82Y20/00 ,  H01L27/146

摘要： A multiple quantum well (MQW) superlattice photodetector, is surmounted by a slab of transparent material having an angled surface that extends upward and away from the photodetector, such that incident radiation which is initially normal to the superlattice undergoes total internal reflection at the angled surface and is reflected onto the detector at a substantially non-normal angle. This off-normal angle allows the radiation to be partially absorbed by the detector. A reflection grating is preferably formed on the opposite side of the detector to redirect received radiation back through the MQW superlattice at an altered angle, such that remaining radiation can be absorbed by the detector during the second pass. The detector is formed upon a substrate, with the slab, substrate and quantum wells all preferably formed from the same type of material. Multiple detectors may be formed in an array upon a common substrate, with a slab providing a common reflective surface for the overall array.

摘要翻译： 多量子阱（MQW）超晶格光电探测器由具有向上和远离光电检测器的倾斜表面的透明材料板覆盖，使得最初垂直于超晶格的入射辐射在成角度的表面处经历全内反射 并以基本上非正常角度反射到检测器上。 该偏离角度允许辐射被检测器部分地吸收。 优选地，在检测器的相对侧上形成反射光栅，以将接收到的辐射以改变的角度重新通过MQW超晶格反射，使得在第二次通过期间可以由检测器吸收剩余的辐射。 检测器形成在衬底上，板，衬底和量子阱都优选由相同类型的材料形成。 多个检测器可以阵列形成在公共基底上，其中平板为整个阵列提供共同的反射表面。

公开(公告)号：US5026148A

公开(公告)日：1991-06-25

申请号：US457207

申请日：1989-12-26

申请人： Cheng P. Wen ,  Chan-Shin Wu ,  Robert N. Sato

发明人： Cheng P. Wen ,  Chan-Shin Wu ,  Robert N. Sato

IPC分类号： H01L31/0232 ,  H01L31/0236 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/035236 ,  Y02E10/50

摘要： A multiple quantum well photodetector structure has superlattice which absorbs radiation polarized non-parallel to the superlattice during a first pass. Non-absorbed radiation polarized parallel to the superlattice is reflected back into the superlattice at a cross-angle to its incident angle, with its polarization shifted to a substantially non-parallel angle to the superlattice. At least part of this radiation is absorbed during its second pass through the superlattice, thereby increasing the efficiency of the device. An optical back grating is used to perform the cross-angle reflection, and a front grating may also be used to shift an incoming beam which is initially normal to the superlattice to an angle at which part of the beam is absorbed. The front grating is at a cross-angle to the back grating to enable a cross-angular shift by the back grating.

摘要翻译： 多量子阱光电探测器结构具有超晶格，其在第一次通过期间吸收在超晶格上非平行偏振的辐射。 与超晶格平行偏振的非吸收辐射被反射回超晶格，与其入射角成十角角，其偏振偏移到与超晶格基本不平行的角度。 这种辐射的至少一部分在其穿过超晶格的第二次通过期间被吸收，从而提高了器件的效率。 光学背光栅用于执行交叉角反射，并且前光栅也可以用于将最初正常于超晶格的入射光束移动到波束的一部分被吸收的角度。 前光栅与后光栅交叉成角度，以便通过后光栅进行交叉角移动。

公开(公告)号：US20120012174A1

公开(公告)日：2012-01-19

申请号：US13037202

申请日：2011-02-28

申请人： CHAN SHIN WU

发明人： CHAN SHIN WU

IPC分类号： H01L31/0224

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  Y02E10/50

摘要： A solar cell device having an airbridge type contact and the method of forming the same are provided. The solar cell device includes a semiconductor layer for turning light into electric current; at least two conductive line sections for transmitting the electric current from the semiconductor layer and formed on the semiconductor layer; and an airbridge type contact interposing between the two conductive line sections and connecting thereto, wherein a space under the airbridge type contact and between the two conductive line sections is formed, and light is allowed to enter the semiconductor layer by passing through the space.

摘要翻译： 提供了具有空中桥接型接触的太阳能电池装置及其形成方法。 太阳能电池装置包括用于将光转换为电流的半导体层; 至少两个导线部分，用于传输来自半导体层并形成在半导体层上的电流; 以及布置在两个导线部分之间并连接到其上的空中桥型接触件，其中形成了空中桥接类型下的空间和两个导线部分之间的空间，并且允许光通过该空间进入半导体层。

公开(公告)号：US20110284983A1

公开(公告)日：2011-11-24

申请号：US13019194

申请日：2011-02-01

申请人： Chan Shin WU ,  Yung-Yi TU ,  Shan Hua WU

发明人： Chan Shin WU ,  Yung-Yi TU ,  Shan Hua WU

IPC分类号： H01L31/0203 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/035281 ,  H01L31/0725 ,  H01L31/0735 ,  Y02E10/544

摘要： A photodiode device and the manufacturing method of the same are provided. The photodiode device includes a substrate; an epitaxy layer on the substrate, the epitaxy layer including a window layer and a cap layer on the window layer, the cap layer covering a portion of the window layer; and a patterned conductive layer on the cap layer, the patterned conductive layer being formed with a bottom area and a top area wherein the bottom area is greater than the top area.

摘要翻译： 提供一种光电二极管装置及其制造方法。 光电二极管装置包括基板; 所述外延层在所述窗口层上包括窗口层和覆盖层，所述覆盖层覆盖所述窗口层的一部分; 以及在盖层上的图案化导电层，所述图案化导电层形成有底部区域和顶部区域，其中底部区域大于顶部区域。

公开(公告)号：US5563423A

公开(公告)日：1996-10-08

申请号：US431382

申请日：1995-04-28

申请人： Chan-Shin Wu ,  Robert N. Sato ,  Cheng P. Wen

发明人： Chan-Shin Wu ,  Robert N. Sato ,  Cheng P. Wen

IPC分类号： H01L31/0352 ,  H01L31/0304 ,  H01L31/101

CPC分类号： B82Y20/00 ,  H01L31/035236

摘要： An improved multiquantum well superlattice photodetector (10) for detecting long wavelength infrared radiation. Electron transport in a first excited energy state is enhanced in barrier layers (20) of the superlattice (16) by lowering the potential energy barriers of the barrier layers (20) to a predetermined level below the first excited energy state. The tunneling component of the dark current in a multiquantum well photodetector (10) may be substantially eliminated by placing a blocking layer (22) at one end of the superlattice (16). The thickness of the blocking layer (22) is also substantially greater than that of the barrier layers (20) of the superlattice (16) to prevent charge carriers which tunnel through the superlattice (16) from reaching the collector contact. The blocking layer (22) also has a potential energy barrier having a height at a level higher than that of the barrier layers (20) of the superlattice (16).

摘要翻译： 一种用于检测长波长红外辐射的改进的多量子阱超晶格光电探测器（10）。 通过将阻挡层（20）的势能垒降低到低于第一激发能量状态的预定水平，在超晶格（16）的势垒层（20）中增强了第一激发能态的电子传输。 通过在超晶格（16）的一端放置阻挡层（22），可以基本上消除多量子阱光电探测器（10）中的暗电流的隧穿分量。 阻挡层（22）的厚度也基本上大于超晶格（16）的阻挡层（20）的厚度，以防止穿过超晶格（16）的电荷载体到达集电极触点。 阻挡层（22）还具有高度高于超晶格（16）的阻挡层（20）的高度的势垒。

公开(公告)号：US5296720A

公开(公告)日：1994-03-22

申请号：US792535

申请日：1991-11-17

申请人： Cheng P. Wen ,  Chan-Shin Wu

发明人： Cheng P. Wen ,  Chan-Shin Wu

IPC分类号： H01L31/0352 ,  H01L27/14 ,  H01L31/00

CPC分类号： B82Y20/00 ,  H01L31/035236

摘要： A multiple quantum well (MQW) radiation sensor distinguishes radiation within a desired bandwidth, particularly long wavelength infrared radiation (LWIR), from background high intensity noise radiation that excites majority-minority charge carrier pairs. A minority charge carrier collector is provided at one end of the MQW, and the flow of minority charge carriers to the collector is sensed. The minority charge carrier flow provides an indication of the majority charge carrier flow that is attributable to the noise radiation rather than to radiation within the desired bandwidth, and can thus be used to provide a corrected indication of the desired bandwidth radiation.

摘要翻译： 多量子阱（MQW）辐射传感器将辐射从背景高强度噪声辐射中区分出期望带宽，特别是长波长红外辐射（LWIR），激发多数少数电荷载体对。 在MQW的一端设置少数电荷载流子收集器，并且感测到少数电荷载流子到集电器的流动。 少数电荷载流子提供可归因于噪声辐射的多数电荷载流子流的指示，而不是期望带宽内的辐射，并且因此可用于提供所需带宽辐射的校正指示。

公开(公告)号：US20110018081A1

公开(公告)日：2011-01-27

申请号：US12842792

申请日：2010-07-23

申请人： Chan Shin Wu ,  Tai-Hui Liu

发明人： Chan Shin Wu ,  Tai-Hui Liu

IPC分类号： H01L31/0232

CPC分类号： H01L31/022408 ,  H01L31/1035 ,  H01L31/1892 ,  Y02E10/50

摘要： A photodiode device and methods of manufacturing the same are provided. The photodiode device comprises a light adsorption layer defining a light-facing side and a back-light side; a via passing through the adsorption layer, the via defining a side wall and a bottom surface; a conformal isolation layer covering the side wall and the bottom surface; a first patterned conductive layer disposed on the back-light side, the first patterned conductive layer having a first portion covering a first portion of the conformation isolation layer; a second patterned conductive layer disposed on the light-facing side of the adsorption layer; and an opening through the conformal isolation layer, wherein the opening is filled with the second patterned conductive layer such that the second patterned conductive layer is connected with the first portion of the first patterned conductive layer.

摘要翻译： 提供光电二极管装置及其制造方法。 光电二极管装置包括限定面向光的侧面和背光侧的光吸收层; 穿过吸附层的通孔，通孔限定侧壁和底表面; 覆盖侧壁和底面的保形隔离层; 设置在背光侧的第一图案化导电层，第一图案化导电层具有覆盖构象隔离层的第一部分的第一部分; 布置在吸附层的面向光侧的第二图案化导电层; 以及通过共形隔离层的开口，其中开口填充有第二图案化导电层，使得第二图案化导电层与第一图案化导电层的第一部分连接。

公开(公告)号：US5077593A

公开(公告)日：1991-12-31

申请号：US457613

申请日：1989-12-27

申请人： Robert N. Sato ,  Chan-Shin Wu ,  Cheng P. Wen

发明人： Robert N. Sato ,  Chan-Shin Wu ,  Cheng P. Wen

IPC分类号： H01L31/0352

CPC分类号： B82Y20/00 ,  H01L31/035236

摘要： A multiquantum well superlattice photodetector for detecting long wavelength infrared radiation in which dark current is reduced by a blocking layer. The tunneling component of the dark current in a multiquantum well photodetector is substantially eliminated by placing a blocking layer at one end of the superlattice. The blocking layer has a potential energy barrier having a height at the same level of the barrier layers of the superlattice. The thickness of the blocking layer is substantially greater than the barrier layers of the superlattice to prevent charge carriers which tunnel through the superlattice from reaching the ohmic contact.

摘要翻译： 一种用于检测长波长红外辐射的多量子阱超晶格光电探测器，其中暗电流被阻挡层减小。 通过在超晶格的一端放置阻挡层，基本上消除了多量子阱光电探测器中的暗电流的隧穿分量。 阻挡层具有在超晶格的阻挡层的相同水平处具有高度的势垒。 阻挡层的厚度基本上大于超晶格的阻挡层，以防止穿过超晶格的电荷载体达到欧姆接触。