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    IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING
    3.
    发明申请
    IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING 有权
    通过闭环控制扭矩监测进行调节盘的现场性能预测

    公开(公告)号：US20100035525A1

    公开(公告)日：2010-02-11

    申请号：US12187637

    申请日：2008-08-07

    申请人： SAMEER Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C. Nangoy ,  Stan D. Tsai

    发明人： SAMEER Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C. Nangoy ,  Stan D. Tsai

    IPC分类号： B24B53/02

    CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B49/16 ,  B24B53/017

    摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.

    摘要翻译： 在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。 抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。 调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。 防止多余的材料去除延长了抛光垫的寿命。 在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。 基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘的力，以便抛光垫的寿命被优化。

    In-situ performance prediction of pad conditioning disk by closed loop torque monitoring
    4.
    发明授权
    In-situ performance prediction of pad conditioning disk by closed loop torque monitoring 有权
    通过闭环力矩监测对垫片调节盘的现场性能预测

    公开(公告)号：US08096852B2

    公开(公告)日：2012-01-17

    申请号：US12187637

    申请日：2008-08-07

    申请人： Sameer Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C Nangoy ,  Stan D Tsai

    发明人： Sameer Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C Nangoy ,  Stan D Tsai

    IPC分类号： B24B49/18

    CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B49/16 ,  B24B53/017

    摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.

    摘要翻译： 在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。 抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。 调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。 防止多余的材料去除延长了抛光垫的寿命。 在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。 基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘的力，以便抛光垫的寿命被优化。

    RETAINING RING MONITORING AND CONTROL OF PRESSURE
    5.
    发明申请
    RETAINING RING MONITORING AND CONTROL OF PRESSURE 有权
    保持环的监测和压力控制

    公开(公告)号：US20130203321A1

    公开(公告)日：2013-08-08

    申请号：US13749554

    申请日：2013-01-24

    申请人： Hung Chih Chen ,  Thomas H. Osterheld ,  Charles C. Garretson ,  Jason Garcheung Fung

    发明人： Hung Chih Chen ,  Thomas H. Osterheld ,  Charles C. Garretson ,  Jason Garcheung Fung

    IPC分类号： B24B37/005 ,  B24B37/32 ,  B24B37/34

    CPC分类号： B24B37/005 ,  B24B37/32 ,  B24B37/345

    摘要： A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

    摘要翻译： 用于在处理系统中传送衬底的装载杯装置包括具有衬底支撑件，致动器和控制器的基座组件。 致动器构造成将基座组件移动到与承载头的保持环接触的装载位置，并且基于由基座组件行进的距离产生保持环厚度信号。 控制器被配置为从致动器接收保持环厚度信号。

    CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK
    6.
    发明申请
    CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK 有权
    基于计量反馈的扁平轮廓闭环控制

    公开(公告)号：US20100035518A1

    公开(公告)日：2010-02-11

    申请号：US12187675

    申请日：2008-08-07

    申请人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

    发明人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

    IPC分类号： B24B49/12 ,  B24B1/00 ,  B24B7/00

    CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B53/017

    摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

    摘要翻译： 化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。 化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。

    Closed loop control of pad profile based on metrology feedback
    7.
    发明授权
    Closed loop control of pad profile based on metrology feedback 有权
    基于计量反馈的焊盘轮廓闭环控制

    公开(公告)号：US08221193B2

    公开(公告)日：2012-07-17

    申请号：US12187675

    申请日：2008-08-07

    申请人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D Tsai ,  Yuchun Wang

    发明人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D Tsai ,  Yuchun Wang

    IPC分类号： B24B49/12 ,  B24B49/18

    CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B53/017

    摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

    摘要翻译： 化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。 化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。

    MEASUREMENT OF PAD THICKNESS AND CONTROL OF CONDITIONING
    8.
    发明申请
    MEASUREMENT OF PAD THICKNESS AND CONTROL OF CONDITIONING 审中-公开
    垫厚度的测量和调节控制

    公开(公告)号：US20120270477A1

    公开(公告)日：2012-10-25

    申请号：US13092628

    申请日：2011-04-22

    申请人： Roy C. Nangoy ,  Hung Chih Chen ,  Shou-Sung Chang ,  Erik S. Rondum ,  Sameer Deshpande

    发明人： Roy C. Nangoy ,  Hung Chih Chen ,  Shou-Sung Chang ,  Erik S. Rondum ,  Sameer Deshpande

    IPC分类号： B24B53/02 ,  B24B1/00

    CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B49/105 ,  B24B49/18 ,  G01B7/107

    摘要： A conditioning process includes rotating a polishing pad about an axis of rotation, conditioning the polishing pad by sweeping an abrasive disk in a path across a surface of the polishing pad between an inner radial distance from the axis of rotation and an outer radial distance from the axis of rotation, sweeping a sensor across the polishing pad while conditioning the polishing pad, measuring a thickness of the polishing pad at a plurality of positions between the inner radial distance and the outer radial distance with the sensor, and adjusting at least one of a dwell time or a pressure of the abrasive disk against the polishing pad for a portion of the path based on measurements of the thickness by the sensor such that the polishing pad wears to a more uniform thickness than without such adjustment.

    摘要翻译： 调节过程包括围绕旋转轴线旋转抛光垫，通过在距离旋转轴线的内径向距离和与旋转轴线的外径向距离之间的抛光垫的表面上的路径中扫掠研磨盘来调节抛光垫 旋转轴线，在调整抛光垫的同时扫过传感器，在传感器的内径向距离和外径向距离之间的多个位置处测量抛光垫的厚度，并调整至少一个 基于通过传感器的厚度的测量，研磨盘对于抛光垫的一部分的停留时间或压力抵达抛光垫，使得抛光垫比没有这种调节的磨损更均匀。

    Temperature control in a chemical mechanical polishing system
    10.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号：US07153188B1

    公开(公告)日：2006-12-26

    申请号：US11245558

    申请日：2005-10-07

    申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015

    摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。