利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

66 条记录 (耗时 0.042 秒)

    APPARATUS AND METHOD FOR COMPENSATION OF VARIABILITY IN CHEMICAL MECHANICAL POLISHING CONSUMABLES
    6.
    发明申请
    APPARATUS AND METHOD FOR COMPENSATION OF VARIABILITY IN CHEMICAL MECHANICAL POLISHING CONSUMABLES 有权
    用于补偿化学机械抛光消耗品的可变性的装置和方法

    公开(公告)号：US20120100779A1

    公开(公告)日：2012-04-26

    申请号：US13178126

    申请日：2011-07-07

    申请人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

    发明人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

    IPC分类号： B24B49/00

    CPC分类号： B24B53/007 ,  B24B37/005

    摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

    摘要翻译： 提供了用于调节CMP系统中抛光垫的装置和方法。 在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时 监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光 使用调整后的抛光配方的一个或多个基材。

    Method for compensation of variability in chemical mechanical polishing consumables
    7.
    发明授权
    Method for compensation of variability in chemical mechanical polishing consumables 有权
    化学机械抛光耗材的变异性补偿方法

    公开(公告)号：US08758085B2

    公开(公告)日：2014-06-24

    申请号：US13178126

    申请日：2011-07-07

    申请人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

    发明人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

    IPC分类号： B24B49/00 ,  B24B51/00

    CPC分类号： B24B53/007 ,  B24B37/005

    摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

    摘要翻译： 提供了用于调节CMP系统中抛光垫的装置和方法。 在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时 监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光 使用调整后的抛光配方的一个或多个基材。

    IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING
    8.
    发明申请
    IN-SITU PERFORMANCE PREDICTION OF PAD CONDITIONING DISK BY CLOSED LOOP TORQUE MONITORING 有权
    通过闭环控制扭矩监测进行调节盘的现场性能预测

    公开(公告)号：US20100035525A1

    公开(公告)日：2010-02-11

    申请号：US12187637

    申请日：2008-08-07

    申请人： SAMEER Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C. Nangoy ,  Stan D. Tsai

    发明人： SAMEER Deshpande ,  Shou-Sung Chang ,  Hung Chih Chen ,  Roy C. Nangoy ,  Stan D. Tsai

    IPC分类号： B24B53/02

    CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B49/16 ,  B24B53/017

    摘要： Polishing pads used in CMP machines are consumable components that are typically replaced after a specific number of wafers have been processed. The life of a polishing pad is optimized by controlling the rate of material removal from the polishing pad by the conditioning disk. The conditioning disk removes enough material so the polishing surface can properly process the wafers but does not remove any excess material. Preventing excess material removal extends the life of the polishing pad. During CMP processing, the controller receives data concerning the torque applied to the conditioning disk and the torque applied to the arm to sweep the conditioning disk across the polishing pad. Based upon the detected operating conditions, the system can predict the rate of material removal and adjust the forces applied to the conditioning disk so that the life of the polishing pad is optimized.

    摘要翻译： 在CMP机器中使用的抛光垫是可消耗的部件，通常在处理特定数量的晶片之后被替换。 抛光垫的寿命通过控制由调节盘从抛光垫去除的材料的速率被优化。 调节盘移除足够的材料，因此抛光表面可以适当地处理晶片，但不会去除任何多余的材料。 防止多余的材料去除延长了抛光垫的寿命。 在CMP处理期间，控制器接收关于施加到调节盘的扭矩和施加到臂上的扭矩以扫掠经过抛光垫的调节盘的数据。 基于检测到的操作条件，系统可以预测材料去除速率并调节施加到调节盘的力，以便抛光垫的寿命被优化。

    CLOSED-LOOP CONTROL OF CMP SLURRY FLOW
    9.
    发明申请
    CLOSED-LOOP CONTROL OF CMP SLURRY FLOW 审中-公开
    CMP浆液流动的封闭环控制

    公开(公告)号：US20120009847A1

    公开(公告)日：2012-01-12

    申请号：US12831153

    申请日：2010-07-06

    申请人： Gregory E. Menk ,  Stan D. Tsai ,  Sang J. Cho ,  Sivakumar Dhandapani

    发明人： Gregory E. Menk ,  Stan D. Tsai ,  Sang J. Cho ,  Sivakumar Dhandapani

    IPC分类号： B24B49/10

    CPC分类号： B24B37/26 ,  B24B37/005 ,  B24B37/042 ,  B24B57/02

    摘要： Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated.

    摘要翻译： 本发明的实施方案通常涉及用于化学机械抛光衬底的方法。 所述方法通常包括在抛光表面上测量具有凹槽或其它浆料输送特征的抛光垫的厚度。 一旦确定了抛光表面上的凹槽的深度，则根据所确定的凹槽深度来调整研磨浆料的流速。 在抛光表面上抛光预定数量的基板。 然后可以可选地重复该方法。

    CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK
    10.
    发明申请
    CLOSED LOOP CONTROL OF PAD PROFILE BASED ON METROLOGY FEEDBACK 有权
    基于计量反馈的扁平轮廓闭环控制

    公开(公告)号：US20100035518A1

    公开(公告)日：2010-02-11

    申请号：US12187675

    申请日：2008-08-07

    申请人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

    发明人： Shou-Sung Chang ,  Hung Chih Chen ,  Stan D. Tsai ,  Yuchun Wang

    IPC分类号： B24B49/12 ,  B24B1/00 ,  B24B7/00

    CPC分类号： B24B37/042 ,  B24B49/02 ,  B24B53/017

    摘要： A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

    摘要翻译： 化学机械抛光装置包括测量系统，其在半导体晶片被处理时检测抛光垫的厚度，并且抛光垫的厚度减小。 化学机械抛光装置包括控制器，当检测到比抛光垫的相邻区域更高或更低的区域时，调节调节盘的材料去除速率。