High purity sputter targets with target end-of-life indication and method of manufacture
    1.
    发明授权
    High purity sputter targets with target end-of-life indication and method of manufacture 有权
    具有目标寿命终止指示和制造方法的高纯度溅射靶

    公开(公告)号:US07063773B2

    公开(公告)日:2006-06-20

    申请号:US10344783

    申请日:2001-08-17

    IPC分类号: C23C14/34

    摘要: A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26). A preferred method for sputtering in accordance with the invention comprises the steps of applying electrical power to the sputter target (50, 160); causing the sputter target assembly (50, 160) to produce an electromagnetic signal (not shown) when a target end-of-life condition exists; and monitoring the sputter target assembly (50, 160) to detect the electromagnetic signal.

    摘要翻译: 优选的溅射靶组件(10,10')包括靶(12,12'),沿着界面(22,22')结合到靶(12,12')的背板(14,14')和 在目标(12,12')和背板(14,14')之间的介电颗粒(20,20')。 用于制造溅射靶组件(10,10')的优选方法包括提供靶(12,12')和背板(14,14')的步骤。 在所述靶(12,12')的配合表面(24,26)和所述背板(14,14')之间分布所述电介质颗粒(20,20'),最优选地沿着所述匹配中的一个上的溅射轨迹图案 表面 以及沿所述配合表面(24,26)将所述目标(12,12')结合到所述背板(14,14')。 根据本发明的优选溅射方法包括以下步骤:向溅射靶(50,160)施加电力; 当存在目标寿命终止状态时,使溅射靶组件(50,160)产生电磁信号(未示出); 以及监测溅射靶组件(50,160)以检测电磁信号。

    Method of bonding a titanium containing sputter target to a backing
plate and bonded target/backing plate assemblies produced thereby
    4.
    发明授权
    Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby 失效
    将含钛溅射靶接合到由其制造的背板和结合的目标/背板组件的方法

    公开(公告)号:US5282943A

    公开(公告)日:1994-02-01

    申请号:US896170

    申请日:1992-06-10

    IPC分类号: B23K35/00 C23C14/16 C23C14/34

    摘要: Methods of bonding a titanium containing sputter target member to a heat conductive backing member, such as a copper backing plate, and bonded target/backing plate assemblies are disclosed. Due to the poor wettability of titanium based materials, a uniform, thin film of aluminum is coated thereover and acts as an anchor layer for application of tin and/or indium based solder layers thereover to securely solder bond the target and backing plate. The aluminum coating is sputter coated onto the target. Then, the coated target is heated in an oxygen containing atmosphere. The thus treated titanium target is then ready for conventional solder joining to a copper backing plate or the like by use of tin, lead, and/or indium based solder metals.

    摘要翻译: 公开了将含钛溅射靶构件粘合到导热背衬构件(例如铜背衬板)和结合的靶/背板组件的方法。 由于钛基材料的润湿性差,因此在其上涂覆均匀的铝薄膜,作为其上的锡和/或铟基焊料层的锚定层,以牢固地焊接目标板和背板。 铝涂层溅射涂覆在目标上。 然后,在含氧气氛中加热涂覆的靶。 然后通过使用锡,铅和/或铟基焊料金属,将如此处理的钛靶准备好用于常规焊料连接到铜背衬板等。

    Sputtering target assemblies using resistance welding
    10.
    发明授权
    Sputtering target assemblies using resistance welding 有权
    使用电阻焊的溅射靶组件

    公开(公告)号:US06992261B2

    公开(公告)日:2006-01-31

    申请号:US10620314

    申请日:2003-07-15

    IPC分类号: B23K11/14

    CPC分类号: H01J37/3435 C23C14/3407

    摘要: A method of forming a sputtering target assembly and other metal articles is described. Sputtering target assemblies and metal articles are also described. The method includes bonding a sputter target to a backing plate using resistance heating or welding to bond assembly members that respectively include mating projections and grooves formed in bonding surfaces thereof.

    摘要翻译: 描述了形成溅射靶组件和其它金属制品的方法。 还描述了溅射靶组件和金属制品。 该方法包括使用电阻加热或焊接将溅射靶结合到背板上,以将组装构件分别包括配合突起和形成在其接合表面中的槽。