MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME
    2.
    发明申请
    MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME 有权
    MICROBOLOMETER INFRARED DETECTOR元素及其形成方法

    公开(公告)号:US20100133536A1

    公开(公告)日:2010-06-03

    申请号:US11498939

    申请日:2006-08-03

    摘要: Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

    摘要翻译: 可以通过改变类型的用于形成非晶硅基微热辐射计膜材料的前体和/或通过改变最终的非晶硅基微热辐照仪膜材料的组成来形成和实现微辐射热计红外探测器元件(例如, 通过调节合金组成)以改变材料性质如活化能和载流子迁移率。 无定形硅基微测辐射热计薄膜材料可以包括不同量的一种或多种附加和任选的材料,包括氢,氟,锗,n型掺杂剂和p型掺杂剂。

    Vacuum package fabrication of integrated circuit components
    4.
    发明授权
    Vacuum package fabrication of integrated circuit components 有权
    集成电路元件的真空封装制造

    公开(公告)号:US06586831B2

    公开(公告)日:2003-07-01

    申请号:US09928031

    申请日:2001-08-10

    IPC分类号: H01L2312

    摘要: A vacuum package for integrated circuit devices includes a sealing ring having multiple control spacers of uniform thickness distributed around the sealing ring. The sealing ring is in a designated area on a substrate, material and surrounds one or more integrated circuit devices. The vacuum package also includes a sealing layer on the sealing ring. A vacuum package lid is sealed to the sealing ring by the sealing layer on the sealing ring. The vacuum package lid provides a vacuum cell for the one or more integrated circuit devices.

    摘要翻译: 用于集成电路器件的真空封装包括具有分布在密封环周围的均匀厚度的多个控制间隔物的密封环。 密封圈位于衬底上的指定区域中,并且包围一个或多个集成电路器件。 真空包装还包括密封环上的密封层。 真空包装盖通过密封环上的密封层密封到密封环。 真空包装盖为一个或多个集成电路装置提供真空室。

    Compact noncontact excess carrier lifetime characterization apparatus
    5.
    发明授权
    Compact noncontact excess carrier lifetime characterization apparatus 失效
    紧凑型非接触式超载体寿命表征装置

    公开(公告)号:US5477158A

    公开(公告)日:1995-12-19

    申请号:US130908

    申请日:1993-10-04

    CPC分类号: G01R31/2656 H01L22/14

    摘要: An apparatus (10) is provided for measuring the excess carrier lifetime in a semiconductor material, such as an HgCdTe wafer (MCT). The apparatus includes a computer controller (56) which automates the functions of the apparatus, including the operation of the shutter (28) to control the time the testing samples are exposed to the excitation energy from a laser (14), the laser energy intensity on the sample, the position of the wafer controlled by the computer controller operating a motorized sample positioner (39) and maintaining the temperature of the sample. Multiple samples are taken by the apparatus which are averaged and analyzed to result in a characterization of the carrier lifetime.

    摘要翻译: 提供了一种用于测量诸如HgCdTe晶片(MCT)的半导体材料中的过量载流子寿命的装置(10)。 该装置包括一个计算机控制器(56),其使装置的功能自动化,包括快门(28)的操作,以控制测试样本暴露于来自激光器(14)的激发能量的时间,激光能量强度 在样品上,由操作电动样品定位器(39)的计算机控制器控制的晶片的位置并保持样品的温度。 多个样品由装置取出,其被平均和分析以导致载流子寿命的表征。

    Pixel-level optical elements for uncooled infrared detector devices
    6.
    发明授权
    Pixel-level optical elements for uncooled infrared detector devices 有权
    用于非制冷红外探测器的像素级光学元件

    公开(公告)号:US08610070B2

    公开(公告)日:2013-12-17

    申请号:US12799626

    申请日:2010-04-28

    IPC分类号: H01L27/14 G01J5/20 H01L31/00

    摘要: Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

    摘要翻译: 用于非制冷红外探测器和焦平面阵列的像素级单片光学元件配置,其中单片集成或制造的光学元件可以悬挂在非制冷红外探测器元件的微测辐射热计像素膜结构上。单片光学元件可以是例如 偏振或光谱滤光器元件,光学有源滤光器元件或微透镜元件,其通过绝缘互连结构地附接到现有金属互连,使得光学元件的安装基本上不影响光学元件的热质量或热时间常数 微照度计像素结构,并且使得其需要很少的额外的设备房地产区域超出由微测热计像素结构原始消耗的区域互连。

    Pixel-level optical elements for uncooled infrared detector devices
    7.
    发明申请
    Pixel-level optical elements for uncooled infrared detector devices 有权
    用于非制冷红外探测器的像素级光学元件

    公开(公告)号:US20110266443A1

    公开(公告)日:2011-11-03

    申请号:US12799626

    申请日:2010-04-28

    摘要: Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

    摘要翻译: 用于非制冷红外探测器和焦平面阵列的像素级单片光学元件配置,其中单片集成或制造的光学元件可以悬挂在非制冷红外探测器元件的微测辐射热计像素膜结构上。单片光学元件可以是例如 偏振或光谱滤光器元件,光学有源滤光器元件或微透镜元件,其通过绝缘互连结构地附接到现有金属互连,使得光学元件的安装基本上不影响光学元件的热质量或热时间常数 微照度计像素结构,并且使得其需要很少的额外的设备房地产区域超出由微测热计像素结构原始消耗的区域互连。

    Microbolometer and method for forming
    10.
    发明授权
    Microbolometer and method for forming 有权
    微电热计及其成型方法

    公开(公告)号:US06690014B1

    公开(公告)日:2004-02-10

    申请号:US09557748

    申请日:2000-04-25

    IPC分类号: H01L310376

    CPC分类号: H01L27/14649 G01J5/20

    摘要: A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and is suspended above a silicon substrate at a height of one-quarter wavelength of the infrared radiation to be detected. The amorphous silicon detector changes electrical resistance in response to the absorber element changing temperature. The microbolometer also includes electrode arms coupled to the silicon substrate to provide structural support for the amorphous silicon detector above the surface of the silicon substrate. The electrode arms further provide electrical connectivity for the microbolometer.

    摘要翻译: 提供了一种微测热计,其包括具有响应于吸收红外辐射而改变温度的材料性质的吸收体元件。 非晶硅检测器热耦合到吸收体元件,并且在待检测的红外辐射的四分之一波长的高度上悬挂在硅衬底上。 非晶硅检测器响应于吸收体元件的变化温度而改变电阻。 微热辐射计还包括耦合到硅衬底的电极臂,以为硅衬底的表面上的非晶硅检测器提供结构支撑。 电极臂还提供用于微热辐射计的电连接。