公开(公告)号：US08741311B2

公开(公告)日：2014-06-03

申请号：US12748265

申请日：2010-03-26

Applicant: Chi-Huey Wong ,  Che Ma ,  Cheng-Chi Wang ,  Juine-Ruey Chen

Inventor： Chi-Huey Wong ,  Che Ma ,  Cheng-Chi Wang ,  Juine-Ruey Chen

IPC: A61K39/145

CPC classification number: A61K39/145 ,  A61K39/12 ,  A61K2039/55505 ,  C07K16/1018 ,  C07K2317/76 ,  C12N7/00 ,  C12N2740/11034 ,  C12N2740/16034 ,  C12N2760/16122 ,  C12N2760/16134 ,  C12N2760/16171 ,  C12N2770/24134 ,  Y02A50/386

Abstract: Immunogenic compositions comprising partially glycosylated viral glycoproteins for use as vaccines against viruses are provided. Vaccines formulated using mono-, di-, or tri-glycosylated viral surface glycoproteins and polypeptides provide potent and broad protection against viruses, even across strains. Pharmaceutical compositions comprising monoglycosylated hemagglutinin polypeptides and vaccines generated therefrom and methods of their use for prophylaxis or treatment of viral infections are disclosed. Methods and compositions are disclosed for influenza virus HA, NA and M2, RSV proteins F, G and SH, Dengue virus glycoproteins M or E, hepatitis C virus glycoprotein E1 or E2 and HIV glycoproteins gp120 and gp41.

Abstract translation: 提供了包含部分糖基化的病毒糖蛋白的免疫原性组合物，其用作抗病毒疫苗。 使用单糖，二糖或三糖基化的病毒表面糖蛋白和多肽配制的疫苗甚至可以跨毒株提供有效和广泛的防病毒保护。 公开了包含单糖基化血凝素多肽和由其产生的疫苗的药物组合物及其用于预防或治疗病毒感染的方法。 公开了用于流感病毒HA，NA和M2，RSV蛋白F，G和SH，登革病毒糖蛋白M或E，丙型肝炎病毒糖蛋白E1或E2和HIV糖蛋白gp120和gp41的方法和组合物。

公开(公告)号：US08139175B2

公开(公告)日：2012-03-20

申请号：US12197416

申请日：2008-08-25

Applicant: Chin-Lung Ting ,  Cheng-Chi Wang

Inventor： Chin-Lung Ting ,  Cheng-Chi Wang

IPC: G02F1/136

CPC classification number: H01L29/78696 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.

Abstract translation: 薄膜晶体管包括特定形状的沟道层，热梯度诱导体，栅极绝缘膜，栅电极和层间绝缘膜，源电极和漏电极。 沟道层形成在基板上。 沟道层具有成核区域和晶体端部。 热梯度诱导体主体部分地界定通道层。 栅极绝缘膜形成在基板上，沟道层至少部分地被栅极绝缘膜覆盖。 栅电极形成在栅极绝缘膜上。 层间绝缘膜形成在栅极绝缘膜上，并且栅电极至少部分被层间绝缘膜覆盖。 源电极和漏极形成在层间绝缘膜上，通过栅极绝缘膜和层间绝缘膜，并与沟道层电连接。

公开(公告)号：US20090225032A1

公开(公告)日：2009-09-10

申请号：US12073509

申请日：2008-03-06

Applicant: Cheng-Chi Wang

Inventor： Cheng-Chi Wang

IPC: G06F3/033

CPC classification number: G06F3/03549

Abstract: An overload regulating structure for trackball device includes a base, a top cover, a ball, a circuit board, a plurality of rotatable shafts and disks, and an overload regulator. The ball is three-point supported in the base between the rotatable shafts and the overload regulator. When the ball is subject to an overload, springs in the overload regulator are compressed, allowing the ball to sink into a locating recess in the base and be restricted from rotating freely and thereby protected against the overload. When the ball is released from the overload, the springs in the overload regulator elastically push the ball to the original three-point supported position again.

Abstract translation: 用于轨迹球装置的过载调节结构包括基座，顶盖，球，电路板，多个可旋转的轴和盘，以及过载调节器。 该球在可旋转轴和过载调节器之间的基座中三点支撑。 当球受到过载时，过载调节器中的弹簧被压缩，允许球沉入基座中的定位凹槽中并被限制自由旋转，从而防止过载。 当球从过载中释放时，过载调节器中的弹簧将球弹性地推动到原来的三点支撑位置。

公开(公告)号：USD507486S1

公开(公告)日：2005-07-19

申请号：US29187202

申请日：2003-07-30

Applicant: Cheng Chi Wang

Designer： Cheng Chi Wang

公开(公告)号：US4315477A

公开(公告)日：1982-02-16

申请号：US214548

申请日：1980-12-09

Applicant: Cheng-Chi Wang ,  August H. B. Vanderwyck

Inventor： Cheng-Chi Wang ,  August H. B. Vanderwyck

IPC: C30B19/04 ,  C30B19/06 ,  H01L7/00

CPC classification number: C30B19/061 ,  C30B19/04 ,  C30B29/48 ,  Y10S117/907 ,  Y10S438/909 ,  Y10S438/971

Abstract: Disclosed is a semi-open method of growing an epitaxial HgCdTe layer on a CdTe substrate, including the steps of placing the CdTe substrate and a growth solution of Hg, Cd, and Te within a pressure and temperature controlled container, flowing an inert gas under pressure through the container to reduce the vaporization of Hg from the solution, establishing a cooling zone within the container to condense Hg vaporized from the solution, increasing the temperature of the solution for a time sufficient to react the Hg and Cd with the Te in the solution, reducing the temperature of the solution, establishing contact between the solution and the substrate, maintaining the solution at a temperature sufficient to melt the substrate for a time sufficient to eliminate a Hg vapor diffused layer, reducing the temperature of the solution to near the saturation temperature, and reducing the temperature of the solution at a rate sufficient to cause the solution to crystallize in an HgCdTe layer on the CdTe substrate.

Abstract translation: 公开了一种在CdTe基板上生长外延HgCdTe层的半开放方法，包括以下步骤：将CdTe基板和Hg，Cd和Te的生长溶液放置在压力和温度受控的容器内，使惰性气体流过 压力通过容器以减少Hg从溶液的蒸发，在容器内建立冷却区以冷凝从溶液蒸发的Hg，使溶液的温度升高足以使Hg和Cd与Te反应的时间 溶液，降低溶液的温度，建立溶液与基底之间的接触，将溶液保持在足以熔化基底的温度足以消除Hg蒸气扩散层的时间，将溶液的温度降低到接近 饱和温度，并以足以使溶液在第二次HgCdTe层中结晶的速率降低溶液的温度 e CdTe基板。

公开(公告)号：US07432140B2

公开(公告)日：2008-10-07

申请号：US11623214

申请日：2007-01-15

Applicant: Chin-Lung Ting ,  Cheng-Chi Wang

Inventor： Chin-Lung Ting ,  Cheng-Chi Wang

IPC: H01L21/00

CPC classification number: H01L29/78696 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

Abstract: A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. The channel layer has a nucleation region and a crystal end. The thermal gradient inducer body partially circumscribes the channel layer. The gate insulating film is formed on the substrate, and the channel layer is at least partially covered with the gate insulating film. The gate electrode is formed on the gate insulating film. The interlayer insulating film is formed on the gate insulating film, and the gate electrode is at least partially covered with the interlayer insulating film. The source electrode and the drain electrode are formed on the interlayer insulating film, passed through the gate insulating film and the interlayer insulating film, and electrically connected to the channel layer.

Abstract translation: 薄膜晶体管包括特定形状的沟道层，热梯度诱导体，栅极绝缘膜，栅电极和层间绝缘膜，源电极和漏电极。 沟道层形成在基板上。 沟道层具有成核区域和晶体端部。 热梯度诱导体主体部分地界定通道层。 栅极绝缘膜形成在基板上，沟道层至少部分地被栅极绝缘膜覆盖。 栅电极形成在栅极绝缘膜上。 层间绝缘膜形成在栅极绝缘膜上，并且栅电极至少部分被层间绝缘膜覆盖。 源电极和漏极形成在层间绝缘膜上，通过栅极绝缘膜和层间绝缘膜，并与沟道层电连接。

公开(公告)号：US06998640B2

公开(公告)日：2006-02-14

申请号：US10659117

申请日：2003-09-10

Applicant: Cheng-Chi Wang ,  Chin-Lung Ting

Inventor： Cheng-Chi Wang ,  Chin-Lung Ting

IPC: H01L29/04

CPC classification number: H01L29/66765

Abstract: The invention provides a method of manufacturing a thin film transistor capable of reducing the induced photo-electric current and thus improving the quality of the liquid crystal display, and reducing the number of required photo masks saving on the cost of fabrication. A stack structure is formed first, by successively depositing a gate electrode, a first insulation layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer. Subsequently, a second insulation layer is deposited on the substrate, and the photoresist layer and the second insulation layer on the photoresist layer are removed in a lift-off process. Last, a source electrode, a drain electrode, a passivation layer, and a transparent electrode layer, are formed to complete the thin film transistor process.

Abstract translation: 本发明提供了一种能够减少感应光电流并因此提高液晶显示器质量的薄膜晶体管的制造方法，并且减少了所需的照相掩模的数量，从而节省了制造成本。 首先通过依次沉积栅电极，第一绝缘层，半导体层，欧姆接触层和光致抗蚀剂层来形成堆叠结构。 随后，在衬底上沉积第二绝缘层，并且在剥离过程中去除光致抗蚀剂层上的光致抗蚀剂层和第二绝缘层。 最后，形成源电极，漏电极，钝化层和透明电极层，以完成薄膜晶体管工艺。

公开(公告)号：US20050101071A1

公开(公告)日：2005-05-12

申请号：US10980954

申请日：2004-11-04

Applicant: Cheng-Chi Wang

Inventor： Cheng-Chi Wang

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/66765 ,  H01L29/78669

Abstract: The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.

Abstract translation: 本发明通过避免光感应电流来改善TFT结构的质量，并且通过减少该工艺中所需的掩模数目来降低制造成本，其中前者通过包括栅极层，绝缘层， 非晶硅层和欧姆接触层，后者通过使用层叠结构作为掩模并通过使基板从背面曝光来实现。

公开(公告)号：US06771338B2

公开(公告)日：2004-08-03

申请号：US09981839

申请日：2001-10-19

Applicant: Cheng Chi Wang

Inventor： Cheng Chi Wang

IPC: G02F11335

CPC classification number: G02F1/133555 ,  G02F2203/09

Abstract: A transflective liquid crystal display comprises a top plate comprising a transparent electrode; a bottom plate bonded to the bottom plate, the bottom plate comprising transflective electrodes of aluminum nitride; a liquid crystal layer interposed between the top plate and the bottom plate; and a light source behind the bottom plate. The transflective electrodes reflect incident ambient light and transmit light emitted by the light source. In the liquid crystal display according to the present invention, the transflective electrodes of aluminum nitride replace conventional transparent pixel electrodes such that an image is generated by the transflective liquid crystal display when either ambient light is incident on the surface of the top plate or when light is generated by the light source.

Abstract translation: 半透射型液晶显示器包括：顶板，包括透明电极; 底板结合到底板，底板包括氮化铝的半透反射电极; 插入在所述顶板和所述底板之间的液晶层; 和底板后面的光源。 半透反射电极反射入射的环境光并透射由光源发射的光。 在根据本发明的液晶显示器中，氮化铝的半透反射电极取代传统的透明像素电极，使得当环境光入射到顶板的表面上或当光线时，透射型液晶显示器产生图像 由光源产生。

公开(公告)号：US5192695A

公开(公告)日：1993-03-09

申请号：US727402

申请日：1991-07-09

Applicant: Cheng-Chi Wang ,  Yet-Zen Liu ,  Muren Chu

Inventor： Cheng-Chi Wang ,  Yet-Zen Liu ,  Muren Chu

IPC: H01L31/109 ,  H01L31/18

CPC classification number: H01L31/1832 ,  H01L31/109 ,  Y10S148/031 ,  Y10S438/936

Abstract: HgCdTe semiconductor material having an n-type epitaxial layer is grown on a substrate. A graded p-type epitaxial layer is grown on the n-type layer. The p-type layer is graded such that the large bandgap region is adjacent the heterojunction with the narrow bandgap region at the surface of this layer. The periphery of the p-type layer is then etched to expose the large bandgap material. A HgCdTe passivation layer may then be formed on the p-type layer. A resultant structure is then mesa etched. A metal, such as indium, is formed along the walls of the mesa structure. Indium is selected to form a good ohmic contact with the n-type layer and a Schottky barrier with the large bandgap exposed edge of the p-type layer. In this way, the PN junction is passivated at the large bandgap material. The remaining narrow bandgap material in the p-type will form a good ohmic contact to a metal contact formed on this layer.

Abstract translation: 具有n型外延层的HgCdTe半导体材料生长在基板上。 渐变的p型外延层生长在n型层上。 p型层被分级，使得大的带隙区域与该层表面处的窄带隙区域的异质结相邻。 然后蚀刻p型层的周边以暴露大的带隙材料。 然后可以在p型层上形成HgCdTe钝化层。 然后将得到的结构台面蚀刻。 沿着台面结构的壁形成诸如铟的金属。 选择铟以与n型层形成良好的欧姆接触，并且形成具有p型层的大带隙暴露边缘的肖特基势垒。 以这种方式，PN结在大的带隙材料上被钝化。 p型中剩余的窄带隙材料将与形成在该层上的金属接触形成良好的欧姆接触。