Photoresist composition
    2.
    发明授权
    Photoresist composition 有权
    光刻胶组成

    公开(公告)号:US09507259B2

    公开(公告)日:2016-11-29

    申请号:US13482595

    申请日:2012-05-29

    CPC classification number: G03F7/004 G03F7/0045 G03F7/0397

    Abstract: A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

    PHOTORESIST COMPOSITION
    4.
    发明申请
    PHOTORESIST COMPOSITION 有权
    光电组合物

    公开(公告)号:US20130137038A1

    公开(公告)日:2013-05-30

    申请号:US13482595

    申请日:2012-05-29

    CPC classification number: G03F7/004 G03F7/0045 G03F7/0397

    Abstract: A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.

    Abstract translation: 光致抗蚀剂组合物包含酸敏感性聚合物和具有下式的环状锍化合物:(Ra)1-(Ar)-S +( - CH2-)m·-O3S-(CRb2)n-(L) R a独立地是取代或未取代的C 1-30烷基,C 6-30芳基,C 3-30芳烷基或包含至少一个前述的组合,Ar是单环,多环或稠合多环C 6-30芳基 ,每个R b独立地是H,F,直链或支链C 1-10氟代烷基或含有直链或支链含杂原子的C 1-10氟代烷基,L是任选地包含O,S,N,F 或包含至少一个前述杂原子的组合,X是取代或未取代的C5或更大单环,多环或稠合的多环脂环族基团,任选地包含包含O,S,N,F的杂原子,或包含在 上述中的至少一个,1为0〜4的整数,m为3〜20的整数,n为In 0〜4的整数,p为0〜2的整数。

    NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS
    6.
    发明申请
    NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS 审中-公开
    新型聚合物和光电组合物

    公开(公告)号:US20110269074A1

    公开(公告)日:2011-11-03

    申请号:US13077947

    申请日:2011-03-31

    Abstract: New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

    Abstract translation: 提供新的聚合物,其包含(i)一种或多种共价连接的光酸产生剂部分和(ii)一种或多种光致酸不稳定基团,其中所述一种或多种光酸产生剂部分是一种或多种光酸不稳定基团的组分。 本发明优选的聚合物适用于在短波长例如亚200nm,特别是193nm下成像的光致抗蚀剂。

    Photoresist systems
    10.
    发明授权
    Photoresist systems 有权
    光刻胶系统

    公开(公告)号:US08012670B2

    公开(公告)日:2011-09-06

    申请号:US10412640

    申请日:2003-04-11

    CPC classification number: G03F7/105

    Abstract: New photoresist systems are provided that comprise an underlying processing (or barrier) layer composition and an overcoated photoresist layer. Systems of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.

    Abstract translation: 提供了新的光致抗蚀剂系统,其包括下面的处理(或阻挡)层组合物和外涂光致抗蚀剂层。 本发明的系统可以显示出对SiON和其它无机表面层的显着粘着。

Patent Agency Ranking