ELECTRONIC ASSEMBLY WITH RFI SHIELDING
    1.
    发明申请

    公开(公告)号:US20180310441A1

    公开(公告)日:2018-10-25

    申请号:US15847947

    申请日:2017-12-20

    IPC分类号: H05K9/00 H05K1/02

    摘要: An electronic assembly with RFI shielding including a circuit board, a high frequency electromagnetic radiation device, and a shielding cover is provided. The circuit board includes a connector. The high frequency electromagnetic radiation device is detachably inserted to the connector of the circuit board to be electrically connected with the circuit board. The shielding cover is detachably assembled to the connector to be opened or closed relative to the circuit board. The shielding cover shields high frequency radiation generated by the high frequency electromagnetic radiation device when the shielding cover is in a closed state, and at least a portion of the shielding cover contacts the circuit board in the closed state, and the shielding cover is electrically connected to a grounding portion of the circuit board via the connector.

    Metal-Insulator-Metal Capacitor and Method of Fabricating
    3.
    发明申请
    Metal-Insulator-Metal Capacitor and Method of Fabricating 有权
    金属绝缘体 - 金属电容器和制造方法

    公开(公告)号:US20140042590A1

    公开(公告)日:2014-02-13

    申请号:US13571441

    申请日:2012-08-10

    IPC分类号: H01L29/92

    CPC分类号: H01L28/60 H01L28/75 H01L29/92

    摘要: Methods and apparatus are disclosed for manufacturing metal-insulator-metal (MIM) capacitors. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, which has a bottle neck. The MIM capacitors may comprise an electrode, which may be a top or bottom electrode, in contact with a sidewall of a via. The sidewall contact or the bottle neck of the electrode may burn out to form a high impedance path when the leakage current exceeds a specification, while the sidewall contact or the bottle neck of the electrode has no impact for normal MIM operations. The MIM capacitors may be used as decoupling capacitors.

    摘要翻译: 公开了用于制造金属 - 绝缘体 - 金属(MIM)电容器的方法和装置。 MIM电容器可以包括电极,其可以是具有瓶颈的顶部或底部电极。 MIM电容器可以包括与通孔的侧壁接触的电极,其可以是顶部或底部电极。 当泄漏电流超过规格时,电极的侧壁接触或瓶颈可燃烧形成高阻抗路径,而电极的侧壁接触或瓶颈对于正常的MIM操作没有影响。 MIM电容器可用作去耦电容器。

    Metal oxide semiconductor transistor
    4.
    发明授权
    Metal oxide semiconductor transistor 有权
    金属氧化物半导体晶体管

    公开(公告)号:US08536653B2

    公开(公告)日:2013-09-17

    申请号:US12904166

    申请日:2010-10-14

    IPC分类号: H01L21/70

    摘要: A metal oxide semiconductor transistor includes a substrate including a first well, a second well, and an insulation between the first well and the second well, a first gate structure disposed on the first well, a second gate structure disposed on the second well, four first dopant regions disposed in the substrate at two sides of the first gate structure, and in the substrate at two sides of the second gate structure respectively, two second dopant regions disposed in the substrate at two sides of the first gate structure respectively, two first epitaxial layers disposed in the substrate at two sides of the first gate structure respectively and two first source/drain regions disposed in the substrate at two sides of the first gate structure respectively, wherein each of the first source/drain regions overlaps with one of the first epitaxial layers and one of the second dopant regions simultaneously.

    摘要翻译: 一种金属氧化物半导体晶体管包括:基板,包括第一阱,第二阱以及第一阱和第二阱之间的绝缘,设置在第一阱上的第一栅极结构,设置在第二阱上的第二栅极结构, 分别在第一栅极结构的两侧设置在基板中的第一掺杂区域和分别在第二栅极结构的两侧的基板中,分别在第一栅极结构的两侧设置在基板中的两个第二掺杂区域, 分别在第一栅极结构的两侧设置在基板中的外延层和分别在第一栅极结构的两侧设置在基板中的两个第一源极/漏极区域,其中每个第一源极/漏极区域与 第一外延层和第二掺杂区之一同时。

    Force-sensing modules for light sensitive screens
    5.
    发明授权
    Force-sensing modules for light sensitive screens 有权
    用于光敏屏幕的力传感模块

    公开(公告)号:US08405631B2

    公开(公告)日:2013-03-26

    申请号:US13589182

    申请日:2012-08-20

    IPC分类号: G06F3/041

    摘要: A light sensitive screen includes at least one sensing element each being configured to detect a force applied to a position of the light sensitive screen and generate an electrical signal when a force is detected, and a sensor module configured to receive and process the electrical signal from the at least one sensing element. The sensor module may amplify the electrical signal from one of the at least one sensing element and generate an amplified signal, compare the amplified signal with a threshold and generate a comparing result, and generate a digital signal based on the comparing result, the digital signal including information as to whether the position of the light sensitive screen is touched.

    摘要翻译: 光敏屏幕包括至少一个感测元件,每个感测元件被配置为检测施加到光敏屏幕的位置的力并且当检测到力时产生电信号;以及传感器模块,被配置为接收并处理来自 所述至少一个感测元件。 传感器模块可以放大来自至少一个感测元件之一的电信号并产生放大信号,将放大的信号与阈值进行比较并产生比较结果,并且基于比较结果产生数字信号,数字信号 包括关于感光屏幕的位置是否被触摸的信息。

    Facilitating the creation and use of collections on an electronic device
    6.
    发明授权
    Facilitating the creation and use of collections on an electronic device 有权
    促进在电子设备上创建和使用收藏

    公开(公告)号:US08301586B1

    公开(公告)日:2012-10-30

    申请号:US12242457

    申请日:2008-09-30

    IPC分类号: G06F7/00 G06F17/00

    CPC分类号: G06Q50/10

    摘要: A method for facilitating the creation and use of collections on an electronic device may include receiving user input related to the creation of collections of items that are stored on the electronic device. The method may also include creating the collections of items. The method may also include storing the collections of items on the electronic device. The method may also include backing up the collections to a backup server.

    摘要翻译: 用于促进电子设备上的集合的创建和使用的方法可以包括接收与创建存储在电子设备上的项目集合相关的用户输入。 该方法还可以包括创建项目的集合。 该方法还可以包括将物品的集合存储在电子设备上。 该方法还可以包括将集合备份到备份服务器。

    ANTI-FUSSE STRUCTURE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    ANTI-FUSSE STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    抗融合结构及其制造方法

    公开(公告)号:US20090294903A1

    公开(公告)日:2009-12-03

    申请号:US12132111

    申请日:2008-06-03

    IPC分类号: H01L23/525 H01L21/02

    摘要: An anti-fuse structure and a method of fabricating the same are described. The anti-fuse structure is disposed over a substrate having at least one device and a copper layer therein. The anti-fuse structure includes a bottom conductive layer, an insulating layer and a top conductive layer. The bottom conductive layer is disposed over and electrically connected with the copper layer. The insulating layer is conformally disposed over the bottom conductive layer covering a corner or a downward turning portion of the bottom conductive layer to form a turning portion of the insulating layer. The top conductive layer is conformally disposed over the insulting layer covering the turning portion of the insulating layer.

    摘要翻译: 描述了一种抗熔丝结构及其制造方法。 反熔丝结构设置在其中具有至少一个器件和铜层的衬底上。 反熔丝结构包括底部导电层,绝缘层和顶部导电层。 底部导电层设置在铜层上并与铜层电连接。 绝缘层保形地设置在覆盖底部导电层的拐角或向下转动部分的底部导电层上,以形成绝缘层的转动部分。 顶部导电层保形地设置在覆盖绝缘层的转向部分的绝缘层上。