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公开(公告)号：US08916480B2
公开(公告)日：2014-12-23
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译： 本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。 一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓 。 组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。
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公开(公告)号：US20130149871A1
公开(公告)日：2013-06-13
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译： 本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。 一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓 。 组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。
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公开(公告)号：US09708706B2
公开(公告)日：2017-07-18
申请号：US13307242
申请日：2011-11-30
申请人： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
发明人： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
CPC分类号： C23C14/352 , H01J37/3405 , H01J37/3417
摘要： A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.
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公开(公告)号：US09234278B2
公开(公告)日：2016-01-12
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译： 本公开涉及一种用于引导室内的气体流动的引导元件。 引导元件包括结构，一个或多个入口，出口和运输区域。 一个或多个入口形成在结构的第一侧上。 入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。 出口位于结构的第二侧，与结构的第一侧相对。 出口具有根据去除率选择的出口尺寸。 运输区域在结构内，并将进口连接或连接到出口。
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公开(公告)号：US20130189851A1
公开(公告)日：2013-07-25
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31 , C23C16/50 , B65D35/38 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译： 本公开涉及一种用于引导室内的气体流动的引导元件。 引导元件包括结构，一个或多个入口，出口和运输区域。 一个或多个入口形成在结构的第一侧上。 入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。 出口位于结构的第二侧，与结构的第一侧相对。 出口具有根据去除率选择的出口尺寸。 运输区域在结构内，并将进口连接或连接到出口。
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公开(公告)号：US20130147046A1
公开(公告)日：2013-06-13
申请号：US13313542
申请日：2011-12-07
IPC分类号： H01L23/48 , H01L23/538
CPC分类号： H01L21/764 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.
摘要翻译： 半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。 低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。 还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层 差距
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公开(公告)号：US08624394B2
公开(公告)日：2014-01-07
申请号：US13313542
申请日：2011-12-07
IPC分类号： H01L23/48
CPC分类号： H01L21/764 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.
摘要翻译： 半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。 低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。 还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层 差距
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公开(公告)号：US08953298B2
公开(公告)日：2015-02-10
申请号：US13307089
申请日：2011-11-30
申请人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
发明人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6831 , H01L21/67742
摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.
摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。
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公开(公告)号：US20130135784A1
公开(公告)日：2013-05-30
申请号：US13307089
申请日：2011-11-30
申请人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
发明人： Chung-En Kao , You-Hua Chou , Chih-Tsung Lee , Ming-Shiou Kuo
IPC分类号： B25J11/00 , H01L21/687 , B25J15/00 , B25J17/00 , B25J18/00
CPC分类号： H01L21/6831 , H01L21/67742
摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.
摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。
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公开(公告)号：US09976215B2
公开(公告)日：2018-05-22
申请号：US13460884
申请日：2012-05-01
申请人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Shu-Fen Wu , Chin-Hsiang Lin
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/5096
摘要： An apparatus and method are disclosed for forming thin films on a semiconductor substrate. The apparatus in one embodiment includes a process chamber configured for supporting the substrate, a gas excitation power source, and first and second gas distribution showerheads fluidly coupled to a reactive process gas supply containing film precursors. The showerheads dispense the gas into two different zones above the substrate, which is excited to generate an inner plasma field and an outer plasma field over the wafer. The apparatus deposits a material on the substrate in a manner that promotes the formation of a film having a substantially uniform thickness across the substrate. In one embodiment, the substrate is a wafer. Various embodiments include first and second independently controllable power sources connected to the first and second showerheads to vary the power level and plasma intensity in each zone.
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