Current sense amplifier for RAMs
    5.
    发明授权
    Current sense amplifier for RAMs 失效
    RAM的电流检测放大器

    公开(公告)号:US5856949A

    公开(公告)日:1999-01-05

    申请号:US813731

    申请日:1997-03-07

    Applicant: Chongjun Jiang

    Inventor: Chongjun Jiang

    CPC classification number: H03K3/356139 G11C7/065 G11C2207/063

    Abstract: An improved sense amplifier for RAM arrays is provided which reduces read operation access times, reduces static power consumption and reduces used silicon area. The improved sense amplifier includes an equalizing operation that brings the voltages on the output lines to a midpoint voltage prior to performing a read operation. By providing a midpoint voltage on the output lines, neither output line needs to transition a full rail from Vss to Vcc or vice versa during the amplifying operation, decreasing the amount of time required to read the memory cells.

    Abstract translation: 提供了用于RAM阵列的改进的读出放大器,其减少了读操作访问时间,降低了静态功耗并减少了使用的硅面积。 改进的读出放大器包括在执行读取操作之前使输出线上的电压达到中点电压的均衡操作。 通过在输出线上提供中点电压,在放大操作期间,两条输出线都不需要将完整导轨从Vss转换到Vcc,反之亦然,从而减少读取存储器单元所需的时间。

    Variable capacitor based on frequency of operation
    6.
    发明授权
    Variable capacitor based on frequency of operation 失效
    基于操作频率的可变电容器

    公开(公告)号:US5805016A

    公开(公告)日:1998-09-08

    申请号:US812632

    申请日:1997-03-07

    Applicant: Chongjun Jiang

    Inventor: Chongjun Jiang

    CPC classification number: G05F3/24

    Abstract: A variable capacitor for integrated circuits used as a decoupling capacitor that operates at both low and high frequencies is disclosed. Based upon a programmable input signal, the decoupling capacitance of the circuit varies within a specific range providing a vehicle for testing decoupling capacitance requirements of new integrated circuits and functions and new silicon processes. The programmable input signal switches a transistor from the saturated region of operation to the unsaturated region of operation, varying the decoupling capacitance of the transistor. By providing circuitry to control the switching of the transistor, the circuit operates at both low and high frequencies, reducing the negative impacts of transistor channel resistance during high frequency operation.

    Abstract translation: 公开了一种用于集成电路的可变电容器,用于在低频和高频下工作的去耦电容器。 基于可编程输入信号,电路的去耦电容在特定范围内变化,提供用于测试新集成电路和功能以及新的硅工艺的去耦电容要求的车辆。 可编程输入信号将晶体管从饱和工作区切换到不饱和工作区,改变晶体管的去耦电容。 通过提供控制晶体管开关的电路,电路在低频和高频下工作,减少了高频操作期间晶体管沟道电阻的负面影响。

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