公开(公告)号：US20050133798A1

公开(公告)日：2005-06-23

申请号：US11017516

申请日：2004-12-20

申请人： Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

发明人： Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/00

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.

摘要翻译： 可以通过在衬底的压花表面上的氮化物半导体层的氢化物气相外延（HVPE）生长来快速制备具有在具有一个压花表面的衬底与氮化物半导体层之间的界面处的纳米空隙的氮化物半导体模板。

公开(公告)号：US20090020771A1

公开(公告)日：2009-01-22

申请号：US12196000

申请日：2008-08-21

申请人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

发明人： Chang-Tae Kim ,  Hyun-Min Jung ,  Eui-Gue Jeon ,  Hyun-Suk Kim ,  Gi-Yeon Nam ,  Byeong-Kyun Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382

摘要： The present disclosure relates to an III-nitride compound semiconductor light emitting device and a method of manufacturing the same. The III-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.

摘要翻译： 本公开涉及III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有沟槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口 沿着多个氮化物化合物半导体层的凹槽。

公开(公告)号：US20080315240A1

公开(公告)日：2008-12-25

申请号：US12196066

申请日：2008-08-21

申请人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

发明人： Chang Tae Kim ,  Hyun-Min Jung ,  Tae Hee Lee ,  Byeong Kyun Choi ,  Hyun Suk Kim ,  Gi Yeon Nam

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46

摘要： The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.

摘要翻译： 本公开涉及III族氮化物半导体发光器件，特别是其电极结构。 III族氮化物半导体发光器件包括衬底，在衬底上生长的多个III族氮化物半导体层，由具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层组成 以及位于第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过衬底的多个III- 氮化物半导体层。