Solventless, resistless direct dielectric patterning
    1.
    发明授权
    Solventless, resistless direct dielectric patterning 有权
    无溶剂,无阻抗的直接电介质图案化

    公开(公告)号:US06509138B2

    公开(公告)日:2003-01-21

    申请号:US09482193

    申请日:2000-01-12

    IPC分类号: G03F726

    CPC分类号: G03F7/32 G03F7/167 G03F7/36

    摘要: Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).

    摘要翻译: 公开了用于图案化辐射敏感层的方法。 在一个实施例中,该方法包括通过化学气相沉积将辐射敏感材料沉积在基底上。 将辐射敏感材料暴露于辐射以形成图案,并且使用超临界流体(SCF)显影图案。

    Patterning of Biomaterials Using Fluorinated Materials and Fluorinated Solvents
    3.
    发明申请
    Patterning of Biomaterials Using Fluorinated Materials and Fluorinated Solvents 有权
    使用氟化材料和氟化溶剂的生物材料图案化

    公开(公告)号:US20130115430A1

    公开(公告)日:2013-05-09

    申请号:US13582082

    申请日:2011-03-01

    IPC分类号: B05D1/32 G03F7/20

    摘要: A method for patterning biomaterials is presented. The biomaterials exhibit biological activity after patterning. The use of bio-compatible imaging materials and solvents allows conventional lithographic patterning methods to be applied to patterning biomolecules. The method allows deposition of multiple layers without subsequent layers affecting earlier laid deposits and can pattern multiple different biomolecules on a single surface.

    摘要翻译: 提出了生物材料图案的方法。 生物材料在图案化后表现出生物活性。 使用生物相容的成像材料和溶剂允许将常规的平版印刷图案化方法应用于图案化生物分子。 该方法允许沉积多层而没有后续层影响较早沉积的沉积物,并且可以在单个表面上图案化多个不同的生物分子。

    Electrical device including dielectric layer formed by direct patterning process
    10.
    发明授权
    Electrical device including dielectric layer formed by direct patterning process 失效
    电气设备包括通过直接图案化工艺形成的电介质层

    公开(公告)号:US06946736B2

    公开(公告)日:2005-09-20

    申请号:US10279304

    申请日:2002-10-23

    CPC分类号: G03F7/32 G03F7/167 G03F7/36

    摘要: Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%. Also disclosed is a microelectronic structure comprising a substrate; a plurality of transistors formed on the substrate; and a plurality of conductive features formed within a dielectric pattern, wherein the plurality of conductive features include at least one two-dimensional feature having a dimensional tolerance more precise than 7%.

    摘要翻译: 提供了一种用于在衬底上光刻图案化材料的方法,包括以下步骤:(a)通过化学气相沉积在衬底上沉积辐射敏感材料; (b)将辐射敏感材料选择性地暴露于辐射以形成图案; 和(c)使用超临界流体(SCF)作为显影剂显影图案。 还公开了通过上述方法形成的微结构。 还公开了一种用于光刻图案化衬底上的材料的方法,其中在上述步骤(a)和(b)之后,使用干等离子体蚀刻显影图案。 还公开了一种包含基底的微结构; 以及图案化的介电层,其中所述图案化的介电层包括具有比7%更精确的尺寸公差的至少一个二维特征。 还公开了包括基底的微电子结构; 形成在所述基板上的多个晶体管; 以及形成在电介质图案内的多个导电特征,其中所述多个导电特征包括具有比7%更精确的尺寸公差的至少一个二维特征。