SYNCHRONOUS PRE-TENSIONABLE SENSING SCREW WITH FIBER BRAGG GRATING DEVICES
    1.
    发明申请
    SYNCHRONOUS PRE-TENSIONABLE SENSING SCREW WITH FIBER BRAGG GRATING DEVICES 有权
    同步可预防感应螺丝带光纤布拉格设备

    公开(公告)号:US20140373636A1

    公开(公告)日:2014-12-25

    申请号:US14269789

    申请日:2014-05-05

    发明人: Chun-Chu Yang

    IPC分类号: G01L5/24 G01L1/24

    CPC分类号: G01L5/24 G01L1/246

    摘要: An apparatus includes a sensing screw capable of providing synchronous both pre-drawing of fiber Bragg grating and pre-tightening of bolt with induced characteristics to detect feedback control of large scale public engineering structures or precise equipments to facilitate fabrication of precise elements to achieve more precise control and record fabrication processes. Through the sensing screw apparatus a precision system structure can be formed to meet expectation of improved product quality and comprehensive recording of complete production process and physical characteristics at important points of the production process. The invention can provide instant onsite status and accumulate data or make parameter pre-action to avoid error accumulation, thereby improve production yield or safety of large scale structures.

    摘要翻译: 一种装置包括能够提供光纤布拉格光栅的预拉伸同步并具有诱发特性的预紧螺栓的检测螺钉,以检测大规模公共工程结构或精密设备的反馈控制,以便于制造精确元件以实现更精确 控制和记录制造过程。 通过传感螺丝装置,可以形成精密的系统结构,以满足产品质量的提高和生产过程重要环节的完整生产过程和物理特性的综合记录。 本发明可以提供即时现场状态和累积数据或进行参数预先动作以避免错误累积,从而提高大规模结构的产量或安全性。

    Coaxial transistor structure
    2.
    发明授权
    Coaxial transistor structure 有权
    同轴晶体管结构

    公开(公告)号:US08395223B2

    公开(公告)日:2013-03-12

    申请号:US13214784

    申请日:2011-08-22

    申请人: Chun-Chu Yang

    发明人: Chun-Chu Yang

    IPC分类号: H01L27/105

    摘要: The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.

    摘要翻译: 本发明公开了一种形成在基板上的同轴晶体管,特别是同轴金属氧化物半导体场效应晶体管(CMOSFET)。 CMOSFET的芯片或衬底可以通过通孔堆叠并连接,以形成全对称和全互补的具有更高集成度的同轴互补金属氧化物半导体场效应晶体管(CCMOSFET) 并且没有闩锁问题。

    Lighting device equipped with coaxial line laser diodes and fabrication method thereof
    3.
    发明授权
    Lighting device equipped with coaxial line laser diodes and fabrication method thereof 有权
    配备同轴线激光二极管的照明装置及其制造方法

    公开(公告)号:US08005125B2

    公开(公告)日:2011-08-23

    申请号:US12276452

    申请日:2008-11-24

    申请人: Chun-Chu Yang

    发明人: Chun-Chu Yang

    IPC分类号: H01S5/00

    摘要: The present invention provides a fabrication method of coaxial line laser diodes and a coaxial lighting optical fiber which disperses and guides uniform emission of light from a coaxial line laser diode. The line coaxial laser diode can be extended at a greater length to generate more spontaneous emission photons which are emitted from an elongated tubular active layer. The active layer has a uniform built-in electric field to distribute uniform current therein to get higher quantum efficiency. The length of the coaxial laser diode can be increased through a VLSED method. A longer laser ingot can be produced and cut to a large number of coaxial laser diodes. This method can reduce the waste of cutting in the wafer process and get larger lighting areas. Both the coaxial line laser diode and the coaxial lighting optical fiber can be coupled to form a high efficiency white-emitting luminescence device.

    摘要翻译: 本发明提供一种同轴线激光二极管和同轴照明光纤的制造方法,该同轴线照明光纤分散并引导来自同轴线激光二极管的均匀发光。 线同轴激光二极管可以以更大的长度延伸以产生更多的自发发射光子,这些光子从细长的管状有源层发射。 有源层具有均匀的内置电场以在其中分布均匀的电流以获得更高的量子效率。 可以通过VLSED方法增加同轴激光二极管的长度。 可以生产更长的激光锭并切割成大量的同轴激光二极管。 这种方法可以减少晶片工艺中的切割浪费,并获得更大的照明面积。 同轴线激光二极管和同轴照明光纤都可以耦合以形成高效白光发光装置。

    Optical fiber inclinometer
    4.
    发明申请
    Optical fiber inclinometer 有权
    光纤倾斜仪

    公开(公告)号:US20050169568A1

    公开(公告)日:2005-08-04

    申请号:US10996474

    申请日:2004-11-26

    IPC分类号: G01C9/06 G02B6/00 G02B6/02

    摘要: An optical fiber inclinometer comprises a pair of fiber Bragg grating devices, a fixed base, a connection plate, and a rotatable base. One end of the connection plate is fixed to the fixed base, whereas the other end of the connection plate is connected to the rotatable base through the joint of a turning pair mechanism between them. The two ends of each fiber Bragg grating device are installed onto the fixed base and the rotatable base respectively, and the two devices are mounted on the opposite side of the connection plate. Once the rotatable base rotates around the joint of the connection plate, axial tensile elongation occurs in one of the fiber Bragg grating devices, whereas axial compressive deformation occurs in the other device. The rotation angle of the rotatable base relative to the connection plate can be obtained by measuring and calculating the Bragg wavelength drifts of the pair of fiber Bragg grating devices respectively.

    摘要翻译: 光纤倾斜仪包括一对光纤布拉格光栅装置,固定基座,连接板和可旋转基座。 连接板的一端固定到固定基座,而连接板的另一端通过它们之间的转动对机构的接头连接到可旋转基座。 每个光纤布拉格光栅装置的两端分别安装在固定基座和可旋转基座上,两个装置安装在连接板的相对侧上。 一旦可旋转的基座围绕连接板的接头旋转,则在一个光纤布拉格光栅装置中发生轴向拉伸伸长,而在另一个装置中发生轴向压缩变形。 旋转底座相对于连接板的旋转角度可以通过分别测量和计算一对光纤布喇格光栅器件的布拉格波长漂移来获得。

    Synchronous pre-tensionable sensing screw with fiber Bragg grating devices

    公开(公告)号:US09645025B2

    公开(公告)日:2017-05-09

    申请号:US14269789

    申请日:2014-05-05

    发明人: Chun-Chu Yang

    IPC分类号: G01L5/24 G01L1/24

    CPC分类号: G01L5/24 G01L1/246

    摘要: An apparatus includes a sensing screw capable of providing synchronous both pre-drawing of fiber Bragg grating and pre-tightening of bolt with induced characteristics to detect feedback control of large scale public engineering structures or precise equipments to facilitate fabrication of precise elements to achieve more precise control and record fabrication processes. Through the sensing screw apparatus a precision system structure can be formed to meet expectation of improved product quality and comprehensive recording of complete production process and physical characteristics at important points of the production process. The invention can provide instant onsite status and accumulate data or make parameter pre-action to avoid error accumulation, thereby improve production yield or safety of large scale structures.

    Lighting Device Equipped with Coaxial Line Laser Diodes and Fabrication Method Thereof
    6.
    发明申请
    Lighting Device Equipped with Coaxial Line Laser Diodes and Fabrication Method Thereof 有权
    配备同轴线激光二极管的照明装置及其制作方法

    公开(公告)号:US20090135877A1

    公开(公告)日:2009-05-28

    申请号:US12276452

    申请日:2008-11-24

    申请人: Chun-Chu YANG

    发明人: Chun-Chu YANG

    IPC分类号: H01S5/125

    摘要: The present invention provides a fabrication method of coaxial line laser diodes and a coaxial lighting optical fiber which disperses and guides uniform emission of light from a coaxial line laser diode. The line coaxial laser diode can be extended at a greater length to generate more spontaneous emission photons which are emitted from an elongated tubular active layer. The active layer has a uniform built-in electric field to distribute uniform current therein to get higher quantum efficiency. The length of the coaxial laser diode can be increased through a VLSED method. A longer laser ingot can be produced and cut to a large number of coaxial laser diodes. This method can reduce the waste of cutting in the wafer process and get larger lighting areas. Both the coaxial line laser diode and the coaxial lighting optical fiber can be coupled to form a high efficiency white-emitting luminescence device.

    摘要翻译: 本发明提供一种同轴线激光二极管和同轴照明光纤的制造方法,该同轴线照明光纤分散并引导来自同轴线激光二极管的均匀发光。 线同轴激光二极管可以以更大的长度延伸以产生更多的自发发射光子,这些光子从细长的管状有源层发射。 有源层具有均匀的内置电场以在其中分布均匀的电流以获得更高的量子效率。 可以通过VLSED方法增加同轴激光二极管的长度。 可以生产更长的激光锭并切割成大量的同轴激光二极管。 这种方法可以减少晶片工艺中的切割浪费,并获得更大的照明面积。 同轴线激光二极管和同轴照明光纤都可以耦合以形成高效白光发光装置。

    Coaxial Transistor Structure
    7.
    发明申请
    Coaxial Transistor Structure 有权
    同轴晶体管结构

    公开(公告)号:US20090108307A1

    公开(公告)日:2009-04-30

    申请号:US12255721

    申请日:2008-10-22

    申请人: Chun-Chu Yang

    发明人: Chun-Chu Yang

    IPC分类号: H01L29/78 H01L27/092

    摘要: The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.

    摘要翻译: 本发明公开了一种形成在基板上的同轴晶体管,特别是同轴金属氧化物半导体场效应晶体管(CMOSFET)。 CMOSFET的芯片或衬底可以通过通孔堆叠并连接,以形成全对称和全互补的具有更高集成度的同轴互补金属氧化物半导体场效应晶体管(CCMOSFET) 并且没有闩锁问题。

    COAXIAL TRANSISTOR STRUCTURE
    8.
    发明申请
    COAXIAL TRANSISTOR STRUCTURE 有权
    同轴晶体管结构

    公开(公告)号:US20110303986A1

    公开(公告)日:2011-12-15

    申请号:US13214784

    申请日:2011-08-22

    申请人: Chun-Chu YANG

    发明人: Chun-Chu YANG

    IPC分类号: H01L27/092

    摘要: The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.

    摘要翻译: 本发明公开了一种形成在基板上的同轴晶体管,特别是同轴金属氧化物半导体场效应晶体管(CMOSFET)。 CMOSFET的芯片或衬底可以通过通孔堆叠并连接,以形成全对称和全互补的具有更高集成度的同轴互补金属氧化物半导体场效应晶体管(CCMOSFET) 并且没有闩锁问题。

    Coaxial transistor structure
    9.
    发明授权
    Coaxial transistor structure 有权
    同轴晶体管结构

    公开(公告)号:US08030714B2

    公开(公告)日:2011-10-04

    申请号:US12255721

    申请日:2008-10-22

    申请人: Chun-Chu Yang

    发明人: Chun-Chu Yang

    IPC分类号: H01L29/06

    摘要: The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.

    摘要翻译: 本发明公开了一种形成在基板上的同轴晶体管,特别是同轴金属氧化物半导体场效应晶体管(CMOSFET)。 CMOSFET的芯片或衬底可以通过通孔堆叠并连接,以形成全对称和全互补的具有更高集成度的同轴互补金属氧化物半导体场效应晶体管(CCMOSFET) 并且没有闩锁问题。

    Coaxial light-guide system consisting of coaxial light-guide fiber basing its refractive index profiles on radii and with its coaxial both semiconductor light sources and semiconductor detectors
    10.
    发明申请
    Coaxial light-guide system consisting of coaxial light-guide fiber basing its refractive index profiles on radii and with its coaxial both semiconductor light sources and semiconductor detectors 审中-公开
    同轴导光系统由同轴导光纤维组成,其折射率分布在半径上,同轴半导体光源和半导体探测器

    公开(公告)号:US20080142828A1

    公开(公告)日:2008-06-19

    申请号:US12001131

    申请日:2007-12-10

    申请人: Chun-Chu YANG

    发明人: Chun-Chu YANG

    IPC分类号: H01L33/00 G02B6/036 H01L31/00

    摘要: A coaxial light-guide system includes a coaxial light-guide optical fiber which is fabricated by having refractive index profile set on radii. Thus the coaxial circular outer-cladding and the axial inter-cladding have the same refractive index. The light guide refractive index profile center is moved from the axis to the entire radii of the optical fiber. Light propagates between the axial inter-cladding and the coaxial circular outer-cladding. Such a new positioning prevents center-dip in the refractive index profile that occurs to the prior optical fiber after fabrication is finished. The coaxial single-mode optical fiber of the invention has a greater optical flux than the prior optical fiber, and can increase communication distance. Coupled with a coaxial light source and photodiode of the invention that have an coaxial inner and outer conductors to supply electric power and a plurality of annular semiconductor layers interposed therebetween, energy waste caused by prior edge-emitting elliptic light source injecting in a circular core can be eliminated.

    摘要翻译: 同轴导光系统包括同轴导光光纤,其通过在半径上设置折射率分布来制造。 因此,同轴圆形外包层和轴向包层具有相同的折射率。 光导折射率分布中心从光轴移动到整个半径。 光在轴向包层和同轴圆形外包层之间传播。 这种新的定位防止在制造完成之后对现有光纤发生的折射率分布的中心倾斜。 本发明的同轴单模光纤具有比现有光纤更大的光通量,并且可以增加通信距离。 与本发明的同轴光源和光电二极管耦合,其具有同轴的内外导体以提供电力,并且插入其间的多个环形半导体层,由先前的边缘发射椭圆形光源注入圆形芯的能量浪费 被淘汰。