公开(公告)号：US08674410B2

公开(公告)日：2014-03-18

申请号：US13413951

申请日：2012-03-07

申请人： Yen-Hao Shih ,  Ying-Tso Chen ,  Shih-Chang Tsai ,  Chun-Fu Chen

发明人： Yen-Hao Shih ,  Ying-Tso Chen ,  Shih-Chang Tsai ,  Chun-Fu Chen

IPC分类号： H01L27/118 ,  H01L29/78 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/283 ,  H01L21/28052 ,  H01L21/28123 ,  H01L21/823443 ,  H01L27/1052 ,  H01L29/4933

摘要： A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is proviced. A silicon layer is formed on the substrate. A planarization process is performed to make the silicon layer having a planar surface. A part of the silicon layer is removed to form a plurality of first gates on the first region and to form a plurality of second gates on the second region. The height of the first gates is greater than the height of the second gates, and top surfaces of the first gates and the second gates have the same height level. A dielectric layer covering the first gates and the second gates is formed and exposes the top surfaces of the first gates and the second gates. A metal silicide is formed on the top surfaces of the first gates and the second gates.

摘要翻译： 以下公开了金属硅化物的制造方法。 证明具有第一区域和第二区域的衬底。 在衬底上形成硅层。 进行平面化处理以使硅层具有平坦表面。 去除硅层的一部分以在第一区域上形成多个第一栅极，并在第二区域上形成多个第二栅极。 第一栅极的高度大于第二栅极的高度，并且第一栅极和第二栅极的顶表面具有相同的高度水平。 覆盖第一栅极和第二栅极的电介质层形成并露出第一栅极和第二栅极的顶表面。 金属硅化物形成在第一栅极和第二栅极的顶表面上。

公开(公告)号：US20130234210A1

公开(公告)日：2013-09-12

申请号：US13413951

申请日：2012-03-07

申请人： Yen-Hao Shih ,  Ying-Tso Chen ,  Shih-Chang Tsai ,  Chun-Fu Chen

发明人： Yen-Hao Shih ,  Ying-Tso Chen ,  Shih-Chang Tsai ,  Chun-Fu Chen

IPC分类号： H01L27/118 ,  H01L21/82

CPC分类号： H01L21/283 ,  H01L21/28052 ,  H01L21/28123 ,  H01L21/823443 ,  H01L27/1052 ,  H01L29/4933

摘要： A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is proviced. A silicon layer is formed on the substrate. A planarization process is performed to make the silicon layer having a planar surface. A part of the silicon layer is removed to form a plurality of first gates on the first region and to form a plurality of second gates on the second region. The height of the first gates is greater than the height of the second gates, and top surfaces of the first gates and the second gates have the same height level. A dielectric layer covering the first gates and the second gates is formed and exposes the top surfaces of the first gates and the second gates. A metal silicide is formed on the top surfaces of the first gates and the second gates.

摘要翻译： 以下公开了金属硅化物的制造方法。 证明具有第一区域和第二区域的衬底。 在衬底上形成硅层。 进行平面化处理以使硅层具有平坦表面。 去除硅层的一部分以在第一区域上形成多个第一栅极，并在第二区域上形成多个第二栅极。 第一栅极的高度大于第二栅极的高度，并且第一栅极和第二栅极的顶表面具有相同的高度水平。 覆盖第一栅极和第二栅极的电介质层形成并露出第一栅极和第二栅极的顶表面。 金属硅化物形成在第一栅极和第二栅极的顶表面上。

公开(公告)号：US20090029551A1

公开(公告)日：2009-01-29

申请号：US11878654

申请日：2007-07-26

申请人： Chun-Fu Chen ,  Yung-Tai Hung ,  Chin-Ta Su ,  Kuang-Chao Chen

发明人： Chun-Fu Chen ,  Yung-Tai Hung ,  Chin-Ta Su ,  Kuang-Chao Chen

IPC分类号： H01L21/461 ,  C09K13/00

CPC分类号： B24B37/24 ,  B24D3/346

摘要： A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer.

摘要翻译： 提供了半导体器件的两个相邻结构的化学机械抛光方法。 一种用于机械抛光的方法，包括：（a）提供半导体器件，其包括在其表面形成的凹部，形成在所述表面上的第一层，以及填充有所述凹部并形成在所述第一层上的第二层; 和（b）用垫和基本上无抑制剂的浆料基本上抛光第一层和第二层，其中该垫包括第二层的腐蚀抑制剂。

公开(公告)号：US20070202702A1

公开(公告)日：2007-08-30

申请号：US11364482

申请日：2006-02-28

申请人： Chun Fu Chen ,  Yung Hung ,  Yun Yang

发明人： Chun Fu Chen ,  Yung Hung ,  Yun Yang

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/02065

摘要： A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

摘要翻译： 公开了一种化学机械抛光方法。 该方法包括在其上具有至少一个沟槽结构的晶片上形成膜; 通过提供抛光组合物来抛光膜的表面以提供第一抛光表面; 用漂洗组合物漂洗第一抛光表面以提供漂洗表面; 并通过提供第二抛光组合物来抛光冲洗的表面以提供第二抛光表面。

公开(公告)号：US20070054471A1

公开(公告)日：2007-03-08

申请号：US11162034

申请日：2005-08-26

申请人： Chun-Fu Chen ,  Chi-Tung Huang ,  Yung-Tai Hung

发明人： Chun-Fu Chen ,  Chi-Tung Huang ,  Yung-Tai Hung

IPC分类号： H01L21/00

CPC分类号： H01L23/544 ,  G03F9/7076 ,  H01L21/31604 ,  H01L2223/5442 ,  H01L2223/5448 ,  H01L2924/0002 ,  H01L2924/00

摘要： An alignment mark is fabricated containing a mark portion and a trench structure. The trench structure surrounds the mark portion and is at a distance from the mark portion. The mark portion has a plurality of notches. Due to the erosion effect caused by the trench structure, it can prevent the residue leave in the notches of the alignment mark.

摘要翻译： 制造包含标记部分和沟槽结构的对准标记。 沟槽结构围绕标记部分并且距标记部分一定距离。 标记部分具有多个凹口。 由于沟槽结构引起的侵蚀效应，可以防止残留物留在对准标记的凹口中。

公开(公告)号：US4213134A

公开(公告)日：1980-07-15

申请号：US15145

申请日：1979-02-26

申请人： Chun-Fu Chen

发明人： Chun-Fu Chen

IPC分类号： G01D9/16 ,  G01R13/04 ,  G01R13/34 ,  G01D9/00 ,  G01D4/10 ,  H03K5/00 ,  H03K17/00

CPC分类号： G01R13/04 ,  G01D9/16 ,  G01R13/34

摘要： A circuit and method for the display of a high frequency periodic signal on a display (21) having a maximum response frequency less than the periodic signal frequency includes a signal period counter (12) for counting the number of periods in the high frequency periodic signal, a sampling control counter (16) for counting at a frequency substantially greater than the frequency of the high frequency periodic signal, and a comparator (17) for comparing the counts in the signal period counter (12) and the sampling control counter (16) and indicating a match thereof. When a match count is indicated, some electrical parameter of the high frequency periodic signal is sampled and held by a sample and hold circuit (20) until the next match count is indicated, thereby accurately reproducing the high frequency periodic signal at another frequency in a range of frequencies from zero up to and including the maximum response frequencies of the display.

摘要翻译： 用于在具有小于周期信号频率的最大响应频率的显示器（21）上显示高频周期信号的电路和方法包括用于对高频周期信号中的周期数进行计数的信号周期计数器（12） ，用于以基本上大于高频周期信号的频率的频率进行计数的采样控制计数器（16），以及用于比较信号周期计数器（12）和采样控制计数器（16）中的计数的比较器 ）并指示其匹配。 当指示匹配计数时，高频周期信号的一些电参数被取样和保持电路（20）采样和保持，直到指示下一个匹配计数，从而在另一个频率上精确地再现高频周期信号 频率范围从零到包括显示器的最大响应频率。

公开(公告)号：US08774503B2

公开(公告)日：2014-07-08

申请号：US13456291

申请日：2012-04-26

申请人： Gwo Giun (Chris) Lee ,  He-Yuan Lin ,  Ming-Jiun Wang ,  Chun-Fu Chen

发明人： Gwo Giun (Chris) Lee ,  He-Yuan Lin ,  Ming-Jiun Wang ,  Chun-Fu Chen

IPC分类号： G06K9/00

CPC分类号： G06T7/0071 ,  G06T7/579 ,  G06T2207/10016 ,  G06T2207/10024

摘要： A method for color feature extraction extracts a color feature vector representative of the color of each image pixel contained in an image signal. The method comprises: receiving the image signal; mapping the image signal to a color space model, where the color of each of the plural image pixels is represented by a first parameter, a second parameter, and a third parameter; obtaining an adjusted second parameter; clustering the plural image pixels into plural color regions or plural fuzzy regions of a color plane of the color space model; and designating the color feature vector to each of the plural image pixels based on the clustering result.

摘要翻译： 用于颜色特征提取的方法提取表示包含在图像信号中的每个图像像素的颜色的颜色特征向量。 该方法包括：接收图像信号; 将图像信号映射到颜色空间模型，其中多个图像像素中的每一个的颜色由第一参数，第二参数和第三参数表示; 获得调整后的第二参数; 将所述多个图像像素聚类成所述颜色空间模型的彩色平面的多个颜色区域或多个模糊区域; 以及基于所述聚类结果将所述颜色特征向量指定给所述多个图像像素中的每一个。

公开(公告)号：US08774502B2

公开(公告)日：2014-07-08

申请号：US13456289

申请日：2012-04-26

申请人： Gwo Giun (Chris) Lee ,  Chun-Fu Chen ,  He-Yuan Lin

发明人： Gwo Giun (Chris) Lee ,  Chun-Fu Chen ,  He-Yuan Lin

IPC分类号： G06K9/00

CPC分类号： G06T7/0071 ,  G06T7/579 ,  G06T2207/10016 ,  G06T2207/10024

摘要： A method for image/video segmentation, capable of segmenting an image signal for obtaining plural texture color feature regions, by utilizing both of the advantages carried by the texture feature and the color feature is disclosed. The method comprises the following steps: (A) receiving an image signal including plural image pixels; (B) executing a Gabor filtering process and a value operation process on each of the plural image pixels; (C) designating each of the plural image pixels a corresponding texture feature vector basing on the result of the value operation process; (D) executing a segmentation process on the image signal basing on the texture feature vector of each of the plural image pixels, for obtaining plural texture feature regions; and (E) executing a re-segmentation process on plural color feature regions basing on the distribution of the plural texture feature regions, for obtaining plural texture color feature regions.

摘要翻译： 公开了一种通过利用由纹理特征和颜色特征所带来的优点的能够分割用于获得多个纹理颜色特征区域的图像信号的图像/视频分割方法。 该方法包括以下步骤：（A）接收包括多个图像像素的图像信号; （B）对所述多个图像像素中的每一个执行Gabor滤波处理和值运算处理; （C）基于所述值操作处理的结果来指定所述多个图像像素中的每一个对应的纹理特征向量; （D）基于所述多个图像像素中的每一个的纹理特征向量执行对所述图像信号的分割处理，以获得多个纹理特征区域; 以及（E）基于多个纹理特征区域的分布对多个颜色特征区域进行再分割处理，以获得多个纹理颜色特征区域。

公开(公告)号：US20140015107A1

公开(公告)日：2014-01-16

申请号：US13547333

申请日：2012-07-12

申请人： Ching-Kun Chen ,  Chun-Fu Chen ,  Chin-Ta Su

发明人： Ching-Kun Chen ,  Chun-Fu Chen ,  Chin-Ta Su

IPC分类号： B24B49/14 ,  H01L29/06 ,  H01L21/306 ,  B24B49/02 ,  B24D3/00

CPC分类号： B24B37/015 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： Closed loop control may be used to improve uniformity of within wafer uniformity using chemical mechanical planarization. For example, closed loop control may be used to determine a control profile for a chemical mechanical planarization process to more uniformly and consistently achieve the desired extent of variation of within wafer uniformity of a semiconductor wafer.

摘要翻译： 可以使用闭环控制来提高使用化学机械平面化的晶片均匀性的均匀性。 例如，可以使用闭环控制来确定用于化学机械平面化工艺的控制曲线，以更均匀且一致地实现半导体晶片的晶圆内均匀度期望的变化范围。

公开(公告)号：US20140003741A1

公开(公告)日：2014-01-02

申请号：US13537086

申请日：2012-06-29

申请人： Chunhui Cui ,  Chun-Fu Chen ,  Ciao-Siang Siao ,  Gwo Giun LEE ,  Yan Huo

发明人： Chunhui Cui ,  Chun-Fu Chen ,  Ciao-Siang Siao ,  Gwo Giun LEE ,  Yan Huo

IPC分类号： G06K9/32

CPC分类号： G06T7/0024 ,  G06K9/50 ,  G06K2009/3291 ,  G06T7/30 ,  G06T2207/10016 ,  G06T2207/30236

摘要： This invention discloses a method for determining an area scaling ratio of an object in a video image sequence. In one embodiment, a centroid of the object is determined. One or more directed straight lines are selected, each passing through the centroid, extending from an end of the object's boundary to an opposite end thereof, and having a direction that is upward. A length scaling ratio for each directed straight line is determined by: determining a motion vector for each selected pixel on the line; computing a scalar component of the motion vector projected onto the line; estimating a change of the line's length according to the scalar components obtained for all pixels; and determining the length scaling ratio according to the change of the line's length. The area scaling ratio is computed based on the length scaling ratios for all directed straight lines.

摘要翻译： 本发明公开了一种用于确定视频图像序列中的对象的区域缩放比率的方法。 在一个实施例中，确定对象的质心。 选择一个或多个指向的直线，每个直线通过质心，从物体边界的一端延伸到其相对端，并具有向上的方向。 每个指向直线的长度缩放比例由下式确定：确定线上每个所选像素的运动矢量; 计算投影到线上的运动矢量的标量分量; 根据为所有像素获得的标量分量来估计行长度的变化; 并根据线长度的变化来确定长度缩放比例。 基于所有指向直线的长度缩放比率来计算面积缩放比例。