公开(公告)号：US08822342B2

公开(公告)日：2014-09-02

申请号：US12981519

申请日：2010-12-30

申请人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

发明人： Ravi Prakash Srivastava ,  Oluwafemi. O. Ogunsola ,  Craig Child ,  Muhammed Shafi Kurikka Valappil Pallachalil ,  Habib Hichri ,  Matthew Angyal ,  Hideshi Miyajima

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1036 ,  H01L2221/1063

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供用具有第一和第二区域的电介质层制备的衬底。 第一区域包括宽的特征，第二区域包括狭窄的特征。 在宽和窄特征的底部之间存在深度增量。 在基板上形成非保形层，并且在第一和第二区域中对宽且窄的沟槽进行排列。 去除非保形层。 去除非保形层减少了第一和第二区域中宽和窄特征的底部之间的深度增量。

公开(公告)号：US20120168957A1

公开(公告)日：2012-07-05

申请号：US12981519

申请日：2010-12-30

申请人： Ravi Prakash SRIVASTAVA ,  Oluwafemi O. OGUNSOLA ,  Craig CHILD ,  Muhammed Shafi Kurikka Valappil PALLACHALIL ,  Habib HICHRI ,  Matthew ANGYAL ,  Hideshi MIYAJIMA

发明人： Ravi Prakash SRIVASTAVA ,  Oluwafemi O. OGUNSOLA ,  Craig CHILD ,  Muhammed Shafi Kurikka Valappil PALLACHALIL ,  Habib HICHRI ,  Matthew ANGYAL ,  Hideshi MIYAJIMA

IPC分类号： H01L23/48 ,  H01L21/31 ,  H01L21/28

CPC分类号： H01L21/76813 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L2221/1036 ,  H01L2221/1063

摘要： A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region.

摘要翻译： 公开了一种形成装置的方法。 该方法包括提供用具有第一和第二区域的电介质层制备的衬底。 第一区域包括宽的特征，第二区域包括狭窄的特征。 在宽和窄特征的底部之间存在深度增量。 在基板上形成非保形层，并且在第一和第二区域中对宽且窄的沟槽进行排列。 去除非保形层。 去除非保形层减少了第一和第二区域中宽和窄特征的底部之间的深度增量。

公开(公告)号：US08513109B2

公开(公告)日：2013-08-20

申请号：US13052956

申请日：2011-03-21

申请人： Craig Child

发明人： Craig Child

IPC分类号： H01L23/485 ,  H01L23/498

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02123 ,  H01L2224/02125 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05018 ,  H01L2224/05547 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05559 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00012

摘要： A method of manufacturing an interconnect structure for a semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity.

摘要翻译： 提供一种制造具有器件基板的半导体器件的互连结构的方法。 半导体器件包括形成在器件基板上的导电焊盘和形成在导电焊盘上并包围空腔的导电平台。 导电平台具有远离导电垫延伸的周边部分和位于周边部分顶部的封盖部分。 半导体器件还包括设置在空腔中的缓冲材料。

公开(公告)号：US20110171822A1

公开(公告)日：2011-07-14

申请号：US13052956

申请日：2011-03-21

申请人： Craig CHILD

发明人： Craig CHILD

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02123 ,  H01L2224/02125 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05018 ,  H01L2224/05547 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05559 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00012

摘要： A method of manufacturing an interconnect structure for a semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity.

摘要翻译： 提供一种制造具有器件基板的半导体器件的互连结构的方法。 半导体器件包括形成在器件基板上的导电焊盘和形成在导电焊盘上并包围空腔的导电平台。 导电平台具有远离导电垫延伸的周边部分和位于周边部分顶部的封盖部分。 半导体器件还包括设置在空腔中的缓冲材料。

公开(公告)号：US20100244267A1

公开(公告)日：2010-09-30

申请号：US12413164

申请日：2009-03-27

申请人： Craig CHILD

发明人： Craig CHILD

IPC分类号： H01L23/488 ,  H01L21/4763

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02123 ,  H01L2224/02125 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05018 ,  H01L2224/05547 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05559 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00012

摘要： A semiconductor device having a device substrate is provided. The semiconductor device comprises an electrically-conductive pad formed overlying the device substrate, an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity, the electrically-conductive platform having a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion, and a cushioning material disposed in the cavity.

摘要翻译： 提供具有器件基板的半导体器件。 所述半导体器件包括形成在所述器件基板上的导电焊盘，形成在所述导电焊盘上并包围空腔的导电平台，所述导电平台具有远离所述导电焊盘延伸的周边部分， 在周边部分顶部的封盖部分和设置在腔体中的缓冲材料。

公开(公告)号：US07932613B2

公开(公告)日：2011-04-26

申请号：US12413164

申请日：2009-03-27

申请人： Craig Child

发明人： Craig Child

IPC分类号： H01L23/488 ,  H01L21/4763 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/02123 ,  H01L2224/02125 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05018 ,  H01L2224/05547 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05559 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/00012

摘要： A semiconductor device having a device substrate is provided. The semiconductor device includes an electrically-conductive pad formed overlying the device substrate, and an electrically-conductive platform formed overlying the electrically-conductive pad and enclosing a cavity. The electrically-conductive platform has a perimeter portion extending away from the electrically-conductive pad and a capping portion atop the perimeter portion. The semiconductor device also includes a cushioning material disposed in the cavity.

摘要翻译： 提供具有器件基板的半导体器件。 半导体器件包括形成在器件基板上的导电焊盘，以及形成在导电焊盘上并包围空腔的导电平台。 导电平台具有远离导电垫延伸的周边部分和位于周边部分顶部的封盖部分。 半导体器件还包括设置在空腔中的缓冲材料。