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公开(公告)号：US06989286B2
公开(公告)日：2006-01-24
申请号：US10466972
申请日：2002-01-23
IPC分类号： H01L21/20
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substanially comprise “point” defects.
摘要翻译： 公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。 还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。 根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30）， 该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件主体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入到器件本体的部分（53）中 邻近电介质层（51）的部分（5）。 结构缺陷本质上包含“点”缺陷。
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公开(公告)号：US06760355B2
公开(公告)日：2004-07-06
申请号：US09916802
申请日：2001-07-27
IPC分类号： H01S534
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/162 , H01S5/2036 , H01S5/3414
摘要： There is disclosed an improved semiconductor laser device (10). Previous high power (greater than a few hundred milliwatts output) semiconductor lasers suffer from a number of problems such as poor beam quality and low brightness. The invention therefore provides a semiconductor laser device (10) including at least one portion which has been Quantum Well Intermixed (QWI) and means for providing gain profiling within an active portion of the device (10). In a preferred implementation the device (10) provides a Wide Optical Waveguide (WOW).
摘要翻译： 公开了一种改进的半导体激光器件（10）。 以前的大功率（大于几百毫瓦输出）的半导体激光器受到诸如光束质量差和亮度低的诸多问题的困扰。 因此，本发明提供一种半导体激光装置（10），其包括已经是量子阱混合（QWI）的至少一部分和用于在装置（10）的有效部分内提供增益分布的装置。 在优选实施例中，设备（10）提供宽光波导（WOW）。
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公开(公告)号：US06717970B2
公开(公告)日：2004-04-06
申请号：US09788752
申请日：2001-02-20
IPC分类号： H01S500
CPC分类号： H01S5/10 , H01S5/026 , H01S5/1032
摘要： There is disclosed an improved laser device (10), comprising a semiconductor laser diode. The invention provides laser device (10) comprising: at least two lasing regions (12,14); an interference region (16) into which an output of each lasing region (12,14) is coupled; and an output region (118) extending from the interference region (116) to an output (20) of the device (10).
摘要翻译： 公开了一种包括半导体激光二极管的改进的激光装置（10）。 本发明提供了一种激光装置（10），包括：至少两个激光区域（12,14）; 每个激光区域（12,14）的输出耦合到的干涉区域（16）; 以及从干涉区域（116）延伸到装置（10）的输出端（20）的输出区域（118）。
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公开(公告)号：US06671300B2
公开(公告)日：2003-12-30
申请号：US09789046
申请日：2001-02-20
IPC分类号： H01S500
CPC分类号： H01S5/024 , H01L2924/0002 , H01S5/0224 , H01S5/02272 , H01S5/162 , H01S5/164 , H01S5/22 , H01L2924/00
摘要： There is disclosed an improved optical device (10;10a), eg comprising a semiconductor optically active or optoelectronic devices such as lasers, modulators, amplifiers, switching structures, or the like, mounted on a heatsink (28;28a) The invention provides an optically active device (10;10a) comprising a device body (12;12a) having an active region (14;14a) and an optically passive region(s) (20;22) provided at one or more ends (24,26;26a) of the active region (14;14a); and a heatsink (28;28a); the device body (12;12a) and heatsink (28;28a) being retained in thermal association with one another such that a first end of the at least one of the optically passive region(s) (20,22;22a) adjacent an end of the active region (14;14a) is provided within an area of the heatsink (28;28a), and a second end of the said at least one optically passive region(s) (20,22;22a) is provided outwith the area of the heatsink (28;28a).
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公开(公告)号：US06719884B2
公开(公告)日：2004-04-13
申请号：US10047308
申请日：2002-01-15
申请人： John Haig Marsh , Craig James Hamilton , Olek Peter Kowalski , Stuart Duncan McDougall , Xuefeng Liu , Bo-Cang Qui
发明人： John Haig Marsh , Craig James Hamilton , Olek Peter Kowalski , Stuart Duncan McDougall , Xuefeng Liu , Bo-Cang Qui
IPC分类号： C23C1434
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/3413
摘要： A method of manufacturing an optical device, wherein the device body portion from which the device is to be made includes at least one Quantum Well, the method including the step of causing an impurity material including copper to intermix with the Quantum Well.
摘要翻译： 一种制造光学器件的方法，其中将要制造器件的器件主体部分包括至少一个量子阱，该方法包括使包括铜的杂质材料与量子阱混合的步骤。
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公开(公告)号：US06717971B2
公开(公告)日：2004-04-06
申请号：US09788891
申请日：2001-02-20
IPC分类号： H01S500
CPC分类号： H01S5/22 , H01S5/026 , H01S5/0425 , H01S5/0655 , H01S5/1025 , H01S5/16 , H01S5/164 , H01S5/204
摘要： There is disclosed an improved semiconductor laser device (10;10a), eg a single mode index guided laser diode. The device (10;10a) comprises: an optical waveguide (15;15a); at least one electrical contact (20;20a) extending along part of a length of the waveguide (15;15a); and wherein the at least one electrical contact (20;20a) is shorter than the optical waveguide (15;15a). By this arrangement a part or parts of the waveguide (15;15a) are not electrically pumped, in use.
摘要翻译： 公开了一种改进的半导体激光器件（10; 10a），例如单模折射率引导激光二极管。 所述装置（10; 10a）包括：光波导（15; 15a）; 沿着所述波导（15; 15a）的一部分长度延伸的至少一个电触头（20; 20a）; 并且其中所述至少一个电触头（20; 20a）比所述光波导（15; 15a）短。 通过这种布置，波导（15; 15a）的一部分或部分在使用中不被电泵送。
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公开(公告)号：US06944386B2
公开(公告)日：2005-09-13
申请号：US10466971
申请日：2002-01-23
申请人： Craig James Hamilton
发明人： Craig James Hamilton
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, ore the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input/output end (165); and an optically passive region (155, 160) extending from said input/output end (165, 170) of the optically active region (150) an input/output end (175, 180) of the device (110).
摘要翻译： 公开了一种改进的光学器件（110），例如激光器，调制器，放大器，开关，等等。 本发明提供一种光学有源器件（110），包括：具有输入/输出端（165）的光学有源区（150）; 以及从所述光学有源区域（150）的所述输入/输出端（165,170）延伸到所述设备（110）的输入/输出端（175,180）的光学无源区域（155,160）。
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公开(公告)号：US06632684B2
公开(公告)日：2003-10-14
申请号：US09788975
申请日：2001-02-20
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/0265 , H01S5/2063 , H01S5/2068 , H01S5/3413 , H01S5/3414
摘要： There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent “point” defects.
摘要翻译： 公开了一种改进的光学器件的制造方法（
40 ），特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件 。 本发明提供了一种制造光学器件（ 40 > PDAT>）的器件本体部分（ 15 ）， （ 40 ）将包括量子阱（QW）结构（ 30 ），该方法包括步骤 处理设备主体部分（ 15 ），以至少在一部分（ 53 ）中创建扩展缺陷 的设备部分（ 5 ）。 每个扩展缺陷是包括多个相邻“点”缺陷的结构缺陷
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