公开(公告)号：US20050283265A1

公开(公告)日：2005-12-22

申请号：US10710065

申请日：2004-06-16

申请人： Brian Denton ,  Cuc Huynh ,  Shreesh Tandel ,  Steven Voldman

发明人： Brian Denton ,  Cuc Huynh ,  Shreesh Tandel ,  Steven Voldman

IPC分类号： G06F19/00

CPC分类号： G06Q10/06

摘要： A scheduling optimizer system, method and program product that analyzes a device for sensitivities, such as ESD sensitivities, and allows for modification of a floor schedule of the assembly unit of the device based on the sensitivity of the device while improving the overall performance of the assembly unit are disclosed. The scheduling optimizer analyzes sensitivity data for a device during operation of the assembly unit on the floor schedule. The floor schedule is then optimized based on the analyzed sensitivity data.

摘要翻译： 调度优化器系统，方法和程序产品，用于分析设备的灵敏度，如ESD灵敏度，并允许基于设备的灵敏度修改设备的组装单元的楼层调度，同时提高整体性能 公开了组装单元。 调度优化器根据楼层进度分析装配单元运行期间设备的灵敏度数据。 然后根据分析的灵敏度数据优化楼层进度。

公开(公告)号：US5935869A

公开(公告)日：1999-08-10

申请号：US889994

申请日：1997-07-10

申请人： Cuc Huynh ,  Rangarajan Jagannathan ,  Amarnath Jha ,  Thomas Martin ,  Keith Pope ,  Thomas Sandwick

发明人： Cuc Huynh ,  Rangarajan Jagannathan ,  Amarnath Jha ,  Thomas Martin ,  Keith Pope ,  Thomas Sandwick

IPC分类号： H01L21/304 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/30625 ,  C11D11/0047 ,  C11D7/5013 ,  C11D7/3218

摘要： A CMP semiconductor wafer planarization method is provided employing an aqueous solution of a trialkanol amine as a wafer cleaning solution. Wafers are produced exhibiting a substantial reduction in semiconductor device failures as shown by a significant decrease in m.sub.1- m.sub.1 (metal to metal) shorts.

摘要翻译： 使用三烷醇胺的水溶液作为晶片清洗液提供CMP半导体晶片平面化方法。 制造的晶片表现出显着降低的半导体器件故障，如m1-m1（金属对金属）短路的显着降低所示。

公开(公告)号：US20080032214A1

公开(公告)日：2008-02-07

申请号：US11869373

申请日：2007-10-09

申请人： Shaun Crawford ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

发明人： Shaun Crawford ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

IPC分类号： G03F1/00 ,  C09K13/00

CPC分类号： G03F7/427 ,  G03F1/68 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/31144

摘要： A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

公开(公告)号：US20080020586A1

公开(公告)日：2008-01-24

申请号：US11862255

申请日：2007-09-27

申请人： Shaun CRAWFORD ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

发明人： Shaun CRAWFORD ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

IPC分类号： H01L21/312

CPC分类号： G03F7/427 ,  G03F1/68 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/31144

摘要： A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

摘要翻译： 提供光致抗蚀剂修整气体化合物，其将从光刻胶的侧壁的下部选择性地去除抗蚀剂底脚或浮渣。 此外，修剪剂化合物硬化或韧化光致抗蚀剂的上表面，从而加强光致抗蚀剂。 修剪剂化合物包括O 2 O 2和至少一种其它气态氧化物，并且在光致抗蚀剂中形成沟槽之后通常用于干蚀刻工艺中。 除O 2之外，其它氧化物气体可以包括CO 2，SO 2和NO 2。

公开(公告)号：US5778481A

公开(公告)日：1998-07-14

申请号：US690284

申请日：1996-07-26

申请人： Michael R. Amsden ,  Richard A. Bartley ,  Cuc Huynh ,  Paul A. Manfredi ,  Douglas P. Nadeau

发明人： Michael R. Amsden ,  Richard A. Bartley ,  Cuc Huynh ,  Paul A. Manfredi ,  Douglas P. Nadeau

IPC分类号： B08B1/04 ,  B24B37/26 ,  H01L21/00 ,  B08B11/00

CPC分类号： B24B37/26 ,  B08B1/04 ,  H01L21/67028

摘要： Disc shaped cleaning/polishing pads are disclosed for use on a cleaning/polishing apparatus wherein the surface of the cleaning/polishing pad comprises resilient members arranged in patterns which will facilitate the movement of fluids (deoinized water, chemical slurry, etc.) from the center region of the pad to the periphery of the pad. Arrangement of the resilient members on the pads may be spiral, swirl, concentric or any other suitable pattern which will direct fluids to the periphery of the pad upon rotation of the pad.

摘要翻译： 公开了用于清洁/抛光装置的盘形清洁/抛光垫，其中清洁/抛光垫的表面包括布置成图案的弹性构件，其将有利于流体（脱水的水，化学浆料等）的运动 垫的中心区域到垫的周边。 弹性构件在衬垫上的布置可以是螺旋形，漩涡形，同心或任何其它合适的图案，其在衬垫旋转时将流体引导到衬垫的周边。

公开(公告)号：US20060040504A1

公开(公告)日：2006-02-23

申请号：US10711043

申请日：2004-08-19

申请人： Shaun Crawford ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

发明人： Shaun Crawford ,  Cuc Huynh ,  A. Reid ,  Adam Smith ,  Thomas Wagner

IPC分类号： H01L21/76 ,  H01L21/302 ,  H01L21/461

CPC分类号： G03F7/427 ,  G03F1/68 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/31144

摘要： A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

摘要翻译： 提供光致抗蚀剂修整气体化合物，其将从光刻胶的侧壁的下部选择性地去除抗蚀剂底脚或浮渣。 此外，修剪剂化合物硬化或韧化光致抗蚀剂的上表面，从而加强光致抗蚀剂。 修剪剂化合物包括O 2 CO 2和至少一种其它气态氧化物，并且通常在干蚀刻工艺中用于在光致抗蚀剂中形成沟槽之后。除O 2 可以包括CO 2，SO 2和NO 2。