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公开(公告)号：US12113155B2
公开(公告)日：2024-10-08
申请号：US17754113
申请日：2020-09-18
发明人： Tsukasa Maruyama , Takashi Araki , Takehiro Miyaji
CPC分类号： H01L33/486 , H01L33/62 , H01L2933/0066
摘要： The method of manufacturing an optical semiconductor device includes: a mounting step of placing an optical semiconductor chip on a package substrate made of ceramic; a storing step of storing the package substrate after the mounting step in a first dry atmosphere; a placing step of subjecting the optical semiconductor chip on the package substrate to a second dry atmosphere and placing a light transparent window on a joint portion of the package substrate with a joint material therebetween; and a sealing step of joining the joint portion and the light transparent window with the joint material in a low oxygen concentration atmosphere having an oxygen concentration of 1 vol % or less, thereby encapsulating the optical semiconductor chip in a confined space formed by the package substrate and the light transparent window.
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公开(公告)号：US12049684B2
公开(公告)日：2024-07-30
申请号：US18196614
申请日：2023-05-12
CPC分类号： C22C1/0425 , B22F1/05 , B22F1/10 , B22F9/082 , H01B1/22 , B22F1/09 , B22F2009/0828 , B22F2009/0832 , B22F2009/086 , B22F2201/013 , B22F2201/02 , B22F2201/04 , B22F2201/11 , B22F2203/13 , B22F2301/10 , B22F2303/01 , B22F2304/10 , B22F2998/10 , B22F2999/00 , B22F1/10 , C22C1/0425 , B22F1/05
摘要： There are provided an inexpensive copper powder, which has a low content of oxygen even it has a small particle diameter and which has a high shrinkage starting temperature when it is heated, and a method for producing the same. While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.
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公开(公告)号：US20240162031A1
公开(公告)日：2024-05-16
申请号：US18550679
申请日：2022-03-17
发明人： Junji SUGIURA
CPC分类号： H01L21/02013 , H01L21/02021 , H01L21/02035 , H01L29/20
摘要： A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.
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公开(公告)号：US11984535B2
公开(公告)日：2024-05-14
申请号：US17283544
申请日：2019-10-31
发明人： Yasuhiro Watanabe
CPC分类号： H01L33/325 , H01L33/0075 , H01L33/06 , H01L33/14
摘要： Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50≤z≤0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01≤b≤0.95).
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5.发明授权公开(公告)号：US11888090B2
公开(公告)日：2024-01-30
申请号：US17418849
申请日：2019-12-12
发明人： Yuta Koshika , Yoshitaka Kadowaki
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/30
摘要： Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.
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公开(公告)号：US11804313B2
公开(公告)日：2023-10-31
申请号：US17278796
申请日：2019-09-26
发明人： Masanori Fujii , Yuma Higashi
摘要： Provided is silver powder including silver particles having closed pores inside the particles, wherein when cross sections of the silver particles are observed at a magnification of 10,000, an average of numbers of the pores having Heywood diameters of 200 nm or greater relative to an area of the cross sections is 0.01 pores/μm2 or less, and wherein when the cross sections of the silver particles are observed at a magnification of 40,000, an average of numbers of the pores having Heywood diameters of 10 nm or greater but less than 30 nm relative to the area of the cross sections is 25 pores/μm2 or more.
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公开(公告)号：US20230279523A1
公开(公告)日：2023-09-07
申请号：US18196614
申请日：2023-05-12
CPC分类号： C22C1/0425 , B22F9/082 , H01B1/22 , B22F1/10 , B22F1/05 , B22F2009/0828 , B22F2009/0832 , B22F2009/086 , B22F2201/013 , B22F2201/02 , B22F2201/04 , B22F2201/11 , B22F2203/13 , B22F2301/10 , B22F2303/01 , B22F2304/10 , B22F2998/10 , B22F1/09
摘要： There are provided an inexpensive copper powder, which has a low content of oxygen even it has a small particle diameter and which has a high shrinkage starting temperature when it is heated, and a method for producing the same. While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.
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公开(公告)号：US20230216065A1
公开(公告)日：2023-07-06
申请号：US18007535
申请日：2020-07-11
发明人： Shintaro OGAWA , Kazumasa IKARI , Toshihiko UEYAMA
IPC分类号： H01M4/90 , H01M8/1246
CPC分类号： H01M4/9033 , H01M4/9091 , H01M8/1246 , H01M2008/1293
摘要： A perovskite-type composite oxide powder is a perovskite-type composite oxide powder represented by a general formula ABO3-δ (where δ represents an amount of deficiency of oxygen and 0≤δ
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公开(公告)号：US11692241B2
公开(公告)日：2023-07-04
申请号：US16473353
申请日：2017-12-21
CPC分类号： B22F9/082 , B22F1/10 , H01B1/22 , B22F2009/086 , B22F2009/0828 , B22F2009/0832 , B22F2201/013 , B22F2201/02 , B22F2201/04 , B22F2201/11 , B22F2203/13 , B22F2301/10 , B22F2303/01 , B22F2304/10 , B22F2998/10
摘要： While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.
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公开(公告)号：US20230114703A1
公开(公告)日：2023-04-13
申请号：US18045831
申请日：2022-10-12
发明人： Jumpei YAMAMOTO , Tetsuya IKUTA
摘要： A semiconductor light-emitting element comprises, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm and a second conductivity type cladding layer made of InGaAsP containing at least In and P, the second conductivity type cladding layer being configured to be on a light extraction side, a surface of a light extraction face of the second conductivity type cladding layer being a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern. The surface of the light extraction face has a skewness Rsk of −1 or more, and a protective film is provided on the light extraction face.
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