公开(公告)号：US06818897B2

公开(公告)日：2004-11-16

申请号：US10656475

申请日：2003-09-04

申请人： Dale Marius Brown

发明人： Dale Marius Brown

IPC分类号： H01L2714

CPC分类号： G01J1/42 ,  G01J1/0488 ,  G01J5/0014 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

摘要： A photodiode device includes a silicon carbide photodiode including a second semiconductor layer on a first semiconductor layer and an integral aluminum gallium nitride filter on the second semiconductor layer. A method for fabricating a photodiode device for combustion flame temperature determination includes fabricating an integral filter over a silicon carbide photodiode. Examples of various filter fabrication techniques include growing an aluminum gallium nitride filter, fabricating a silicon oxynitride filter, and alternating thin film layers of silicon oxide and silicon nitride.

摘要翻译： 光电二极管装置包括碳化硅光电二极管，其包括在第一半导体层上的第二半导体层和在第二半导体层上的整体的氮化镓铝滤波器。 用于制造用于燃烧火焰温度测定的光电二极管装置的方法包括在碳化硅光电二极管上制造积分滤波器。 各种过滤器制造技术的实例包括生长氮化铝镓过滤器，制造氮氧化硅过滤器和交替的氧化硅和氮化硅薄膜层。

公开(公告)号：US06646265B2

公开(公告)日：2003-11-11

申请号：US09793432

申请日：2001-02-27

申请人： Dale Marius Brown ,  Kanin Chu

发明人： Dale Marius Brown ,  Kanin Chu

IPC分类号： H01L2714

CPC分类号： G01J1/42 ,  G01J1/0488 ,  G01J5/0014 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

摘要： A solid state optical spectrometer for combustion flame temperature determination comprises: a first photodiode device for obtaining a first photodiode signal, the first photodiode device comprising a silicon carbide photodiode and having a range of optical responsivity within an OH band; a second photodiode device for obtaining a second photodiode signal, the second photodiode device comprising a silicon carbide photodiode and a filter, the second photodiode device having a range of optical responsivity in a different and overlapping portion of the OH band than the first photodiode device; and a computer for obtaining a ratio using the first and second photodiode signals and using the ratio to determine the combustion flame temperature.

摘要翻译： 一种用于燃烧火焰温度测定的固态光谱仪，包括：用于获得第一光电二极管信号的第一光电二极管器件，所述第一光电二极管器件包括碳化硅光电二极管，并且在OH波段内具有一定范围的光学响应度; 用于获得第二光电二极管信号的第二光电二极管装置，所述第二光电二极管装置包括碳化硅光电二极管和滤光器，所述第二光电二极管装置在与所述第一光电二极管装置的所述OHB区的不同重叠部分中具有一定范围的光响应度; 以及计算机，用于使用第一和第二光电二极管信号获得比率并使用该比率来确定燃烧火焰温度。

公开(公告)号：US06191458B1

公开(公告)日：2001-02-20

申请号：US08614920

申请日：1996-03-11

申请人： Dale Marius Brown ,  Gerald John Michon ,  Vikram Bidare Krishnamurthy ,  James William Kretchmer

发明人： Dale Marius Brown ,  Gerald John Michon ,  Vikram Bidare Krishnamurthy ,  James William Kretchmer

IPC分类号： H01L2976

CPC分类号： H01L21/8213 ,  H01L21/7602 ,  Y10S148/148

摘要： A depletion mode MOSFET and resistor are fabricated as a silicon carbide (SiC) integrated circuit (IC). The SiC IC includes a first SiC layer doped to a first conductivity type and a second SiC layer overlaid on the first SiC layer and doped to a second conductivity type. The second SiC layer includes at least four more heavily doped regions of the second conductivity type, with two of such regions comprising MOSFET source and drain electrodes and two other of such regions comprising resistor electrodes. The second SiC layer includes an isolation trench between the MOSFET electrodes and the resistor electrodes. At least two electrically conductive contacts are provided as MOSFET electrode contacts, each being positioned over at least a portion of a respective MOSFET electrode and two other electrically conductive contacts are provided as resistor electrode contacts, each being positioned over at least a portion of a respective resistor electrode. An oxide layer extends over the second SiC layer with at least a portion of the oxide layer positioned between the MOSFET electrode contacts. A MOSFET gate electrode is positioned over the oxide layer, and coupling means are provided for electrically coupling one of the source, drain, and gate electrodes to one of the resistor electrodes.

摘要翻译： 耗尽型MOSFET和电阻器被制造为碳化硅（SiC）集成电路（IC）。 SiC IC包括掺杂到第一导电类型的第一SiC层和覆盖在第一SiC层上并掺杂到第二导电类型的第二SiC层。 第二SiC层包括第二导电类型的至少四个更重掺杂区域，其中两个这样的区域包括MOSFET源极和漏极电极以及包括电阻器电极的另外两个这样的区域。 第二SiC层包括在MOSFET电极和电阻器电极之间的隔离沟槽。 提供至少两个导电触点作为MOSFET电极触点，每个至少两个导电触点位于相应MOSFET电极的至少一部分上方，并且另外两个导电触点设置为电阻器电极触点，每个触点都位于相应的至少一部分上 电阻电极。 氧化物层在第二SiC层上延伸，其中氧化物层的至少一部分位于MOSFET电极触点之间。 MOSFET栅电极位于氧化物层上方，并且提供耦合装置用于将源极，漏极和栅电极之一电耦合到电阻器电极之一。

公开(公告)号：US5672889A

公开(公告)日：1997-09-30

申请号：US589672

申请日：1996-01-22

申请人： Dale Marius Brown

发明人： Dale Marius Brown

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/7828 ,  H01L29/1608

摘要： A MOSFET includes a first SiC semiconductor contact layer, a SiC semiconductor channel layer supported by the first SiC contact layer, and a second SiC semiconductor contact layer supported by the channel layer. The second contact and channel layers are patterned to form a plurality of gate region grooves therethrough. Each of the gate region grooves includes a base surface and side surfaces which are covered with groove oxide material. A plurality of metal gate layers are provided, each being supported in a respective one of the plurality of grooves. A plurality of deposited oxide layers are provided, each in a respective one of the grooves so as to be supported by a respective one of the plurality of metal gate layers. A first metal contact layer is applied to the surface of the first SiC contact layer, and a second metal contact layer is applied to a portion of the surface of the second SiC contact layer.

摘要翻译： MOSFET包括第一SiC半导体接触层，由第一SiC接触层支撑的SiC半导体沟道层和由沟道层支撑的第二SiC半导体接触层。 图案化第二接触和沟道层以形成通过其中的多个栅极区沟槽。 每个栅极区域槽包括基面和被沟槽氧化物材料覆盖的侧表面。 设置多个金属栅极层，每个金属栅极层被支撑在多个槽中的相应一个槽中。 多个沉积的氧化物层分别设置在相应的一个槽中，以便被多个金属栅极层中的相应一个支撑。 将第一金属接触层施加到第一SiC接触层的表面，并且将第二金属接触层施加到第二SiC接触层的表面的一部分。

公开(公告)号：US5963791A

公开(公告)日：1999-10-05

申请号：US900442

申请日：1997-07-25

申请人： Dale Marius Brown ,  Richard Joseph Saia ,  John Adam Edmond ,  John Williams Palmour

发明人： Dale Marius Brown ,  Richard Joseph Saia ,  John Adam Edmond ,  John Williams Palmour

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/423 ,  H01L21/00

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  Y10S438/931

摘要： A SiC MOSFET having a self-aligned gate structure is fabricated upon a monocrystalline substrate layer, such as a p type conductivity .alpha.6H silicon carbide (SiC) substrate. An SiC n+ type conductivity layer is epitaxially grown on the substrate layer. A steep-walled groove is etched through the n+ SiC layer and partially into the p SiC layer at a location on the substrate where a MOSFET gate structure is desired. Subsequently, a thin layer of silicon dioxide and a layer of gate metal are successively deposited over the entire structure. The gate metal layer is deposited with sufficient thickness to substantially fill the groove. A layer of photoresist is applied to the entire surface of the gate metal layer. The photoresist and the underlying gate metal are then reactive ion etched down to the oxide layer, leaving gate metal remaining only in the groove. The gate metal and oxide layer form the self-aligned gate structure wherein the walls of the groove are automatically aligned with the edges of drain and source regions that are formed on either side of the groove.

摘要翻译： 具有自对准栅极结构的SiC MOSFET在单晶衬底层（例如p型导电性α6H碳化硅（SiC））衬底上制造。 在衬底层上外延生长SiC n +型导电层。 通过n + SiC层蚀刻陡壁凹槽，并且在需要MOSFET栅极结构的衬底上的位置处部分地蚀刻到p SiC层中。 随后，在整个结构上依次沉积二氧化硅薄层和栅极金属层。 栅极金属层被沉积​​有足够的厚度以基本上填充凹槽。 将光致抗蚀剂层施加到栅极金属层的整个表面。 然后将光致抗蚀剂和下面的栅极金属反应离子蚀刻到氧化物层，留下栅极金属仅在沟槽中。 栅极金属和氧化物层形成自对准栅极结构，其中沟槽的壁自动地与形成在槽的任一侧上的漏极和源极区域的边缘对准。

公开(公告)号：US5955734A

公开(公告)日：1999-09-21

申请号：US933897

申请日：1997-09-19

申请人： Gerald John Michon ,  Louis Jacob Petrucco ,  Dale Marius Brown

发明人： Gerald John Michon ,  Louis Jacob Petrucco ,  Dale Marius Brown

IPC分类号： G01J1/42 ,  G01J1/44 ,  H03F3/08

CPC分类号： G01J1/44 ,  G01J1/429

摘要： A high temperature photocurrent detector circuit including a transimpedance amplifier having multiple stages of gain, and a driver amplifier which generates a driver current that is proportional to the photocurrent flowing through a photocurrent sensor. The voltage source utilizes source voltage wires to generate a supply current that is proportional to the driver current enabling the photocurrent detector circuit to operate as a two wire photocurrent detector circuit.

摘要翻译： 包括具有多级增益的跨阻放大器的高温光电流检测器电路和产生与流过光电流传感器的光电流成正比的驱动电流的驱动放大器。 电压源使用源电压线来产生与驱动电流成比例的电源电流，使得光电流检测器电路能够作为双线光电流检测器电路工作。

公开(公告)号：US5726463A

公开(公告)日：1998-03-10

申请号：US925823

申请日：1992-08-07

申请人： Dale Marius Brown ,  Richard Joseph Saia ,  John Adam Edmond ,  John Williams Palmour

发明人： Dale Marius Brown ,  Richard Joseph Saia ,  John Adam Edmond ,  John Williams Palmour

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/423 ,  H01L31/0256 ,  H01L29/76 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  Y10S438/931

摘要： A SiC MOSFET having a self-aligned gate structure is fabricated upon a monocrystalline substrate layer, such as a p type conductivity .alpha.6H silicon carbide (SiC) substrate. An SiC n+ type conductivity layer, epitaxially grown on the substrate layer, includes a steep-walled groove etched through the n+ SiC layer and partially into the p SiC layer. The groove is lined with a thin layer of silicon dioxide which extends onto the n+ type conductivity layer. A filling of gate metal over the layer of silicon dioxide is contained entirely in the groove. The silicon dioxide layer includes a first window extending to the filling of gate metal in the groove, and second and third windows extending to the n+ type conductivity layer on either side of the groove, respectively. A gate contact extends through the first window to the filling of gate metal in the groove while drain and source contacts extend through the second and third window, respectively, to make contact with the n+ type conductivity layer in drain and source regions on either side of the groove.

摘要翻译： 具有自对准栅极结构的SiC MOSFET在单晶衬底层（例如p型导电性α6H碳化硅（SiC））衬底上制造。 在衬底层上外延生长的SiC n +型导电层包括通过n + SiC层蚀刻并部分地进入p SiC层的陡壁沟槽。 凹槽衬有一层二氧化硅，其延伸到n +型导电层上。 栅极金属在二氧化硅层上的填充完全包含在槽中。 二氧化硅层包括延伸到槽中的栅极金属填充物的第一窗口，以及分别延伸到沟槽两侧的n +型导电层的第二和第三窗口。 栅极接触件延伸穿过第一窗口以填充沟槽中的栅极金属，而漏极和源极触点分别延伸穿过第二和第三窗口，以与第二和第三窗口中的漏极和源极区域中的n +型导电层接触， 凹槽

公开(公告)号：US20090242901A1

公开(公告)日：2009-10-01

申请号：US12483469

申请日：2009-06-12

申请人： Kevin Sean Matocha ,  Gregory Keith Dudoff ,  William Gregg Hawkins ,  Zachary Matthew Stum ,  Stephen Daley Arthur ,  Dale Marius Brown

发明人： Kevin Sean Matocha ,  Gregory Keith Dudoff ,  William Gregg Hawkins ,  Zachary Matthew Stum ,  Stephen Daley Arthur ,  Dale Marius Brown

IPC分类号： H01L29/24 ,  H01L21/285 ,  H01L29/772

CPC分类号： H01L29/4975 ,  H01L21/0465 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7827 ,  H01L29/872

摘要： The present invention provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and annealing the source region. A gate oxide layer is formed on the source region and the silicon carbide layer. The method further includes providing a gate electrode on the gate oxide layer and disposing a dielectric layer on the gate electrode and the gate oxide layer. The method further includes etching a portion of the dielectric layer and a portion of the gate oxide layer to form sidewalls on the gate electrode. A metal layer is disposed on the gate electrode, the sidewalls and the source region. The method further includes forming a gate contact and a source contact by subjecting the metal layer to a temperature of at least about 800° C. The gate contact and the source contact comprise a metal silicide. The distance between the gate contact and the source contact is less than about 0.6 μm. A vertical SiC MOSFET is also provided.

摘要翻译： 本发明提供一种制造金属氧化物半导体场效应晶体管的方法。 该方法包括以下步骤：在碳化硅层上形成源极区域并退火源极区域。 在源区和碳化硅层上形成栅氧化层。 该方法还包括在栅极氧化物层上设置栅电极，并在栅电极和栅极氧化物层上设置电介质层。 该方法还包括蚀刻介电层的一部分和栅极氧化物层的一部分以在栅电极上形成侧壁。 金属层设置在栅电极，侧壁和源极区上。 该方法还包括通过使金属层经受至少约800℃的温度来形成栅极接触和源极接触。栅极接触和源极接触包括金属硅化物。 栅极触点与源极之间的距离小于0.6μm。 还提供了一个垂直的SiC MOSFET。

公开(公告)号：US06599028B1

公开(公告)日：2003-07-29

申请号：US09328354

申请日：1999-06-09

申请人： Emily Yixie Shu ,  Dale Marius Brown ,  Louis Jacob Petrucco ,  Jeffery Allan Lovett ,  Wolfgang Daum ,  Robert John Dunki-Jacobs

发明人： Emily Yixie Shu ,  Dale Marius Brown ,  Louis Jacob Petrucco ,  Jeffery Allan Lovett ,  Wolfgang Daum ,  Robert John Dunki-Jacobs

IPC分类号： G02B636

CPC分类号： G02B6/3644 ,  F23D14/725 ,  F23D14/82 ,  F23N5/08 ,  F23N2031/28 ,  F23N2041/20 ,  F23R3/286 ,  G02B6/3616 ,  G02B6/3664

摘要： An apparatus for detecting flashback occurrences in a premixed combustor system having at least one fuel nozzle includes at least one photodetector and at least one fiber optic element coupled between the at least one photodetector and a test region of the combustor system wherein a respective flame of the fuel nozzle is not present under normal operating conditions. A signal processor monitors a signal of the photodetector. The fiber optic element can include at least one optical fiber positioned within a protective tube. The fiber optic element can include two fiber optic elements coupled to the test region. The optical fiber and the protective tube can have lengths sufficient to situate the photodetector outside of an engine compartment. A plurality of fuel nozzles and a plurality of fiber optic elements can be used with the fiber optic elements being coupled to respective fuel nozzles and either to the photodetector or, wherein a plurality of photodetectors are used, to respective ones of the plurality of photodetectors. The signal processor can include a digital signal processor.

摘要翻译： 一种用于检测具有至少一个燃料喷嘴的预混合燃烧器系统中的闪回发生的装置，包括至少一个光电检测器和耦合在所述至少一个光电检测器与所述燃烧器系统的测试区域之间的至少一个光纤元件，其中， 燃油喷嘴在正常运行条件下不存在。 信号处理器监视光电检测器的信号。 光纤元件可以包括位于保护管内的至少一个光纤。 光纤元件可以包括耦合到测试区域的两个光纤元件。 光纤和保护管可以具有足以将光电探测器放置在发动机室外部的长度。 可以使用多个燃料喷嘴和多个光纤元件，其中光纤元件被耦合到相应的燃料喷嘴，并且耦合到光电检测器，或者使用多个光电检测器到多个光电检测器中的相应的光检测器。 信号处理器可以包括数字信号处理器。

公开(公告)号：US06350988B1

公开(公告)日：2002-02-26

申请号：US09561885

申请日：2000-05-01

申请人： Dale Marius Brown

发明人： Dale Marius Brown

IPC分类号： G01J502

CPC分类号： G01J5/602 ,  G01J5/0014 ,  G01J5/60

摘要： An optical spectrometer for combustion flame temperature determination includes at least two photodetectors positioned for receiving light from a combustion flame and having different overlapping optical bandwidths for producing respective output signals; and a computer for obtaining a difference between a first respective output signal of a first one of the at least two photodetectors with and a second respective output signal of a second one of the at least two photodetectors, dividing the difference by one of the first and second respective output signals to obtain a normalized output signal, and using the normalized output signal to determine the combustion flame temperature.

摘要翻译： 用于燃烧火焰温度测定的光谱仪包括至少两个光电检测器，定位成用于接收来自燃烧火焰的光并具有不同的重叠光学带宽以产生相应的输出信号; 以及计算机，用于获得所述至少两个光电检测器中的第一个的第一相应输出信号与所述至少两个光电检测器中的第二个的第二相应输出信号之间的差，将所述差除以所述第一和 第二各自的输出信号以获得归一化的输出信号，并且使用归一化的输出信号来确定燃烧火焰温度。