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公开(公告)号：US06719874B1
公开(公告)日：2004-04-13
申请号：US09823800
申请日：2001-03-30
IPC分类号： B24B100
CPC分类号： B24B37/32
摘要： A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.
摘要翻译： 提供了具有抛光垫，用于保持晶片的载体主体，保持环和主动挡环支架的化学机械平面化（CMP）系统。 主动保持环由具有厚度和宽度的圆形环限定。 圆环由弹性体材料限定。 圆环被配置成放置在保持环和载体之间。 圆环中具有多个空隙，并且多个空隙限定在圆环周围的位置。 圆环具有由弹性体材料和多个空隙设定的可压缩水平。
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公开(公告)号：US07481695B2
公开(公告)日：2009-01-27
申请号：US09748708
申请日：2000-12-22
IPC分类号： B24B5/00
CPC分类号： B24B41/04 , B24B37/20 , B24B41/061 , B24B49/16 , B24B53/017 , H01L21/30625
摘要： CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.
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公开(公告)号：US06640155B2
公开(公告)日：2003-10-28
申请号：US09747765
申请日：2000-12-22
IPC分类号： G06F1900
CPC分类号： B24B37/20 , B24B41/04 , B24B41/061 , B24B49/16 , B24B53/017 , H01L21/30625
摘要： CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.
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4.发明授权Chemical mechanical polishing apparatus and methods with porous vacuum chuck and perforated carrier film 失效化学机械抛光装置和方法用多孔真空吸盘和穿孔载体膜公开(公告)号：US06752703B2
公开(公告)日：2004-06-22
申请号：US10029515
申请日：2001-12-21
IPC分类号： B24B722
摘要： CMP systems and methods provide necessary vacuum and pressure to be applied from a vacuum chuck through a carrier film to a wafer without interfering with desired wafer planarization during CMP operations. Prior low polish rate-areas on the wafer may be eliminated from an exposed surface of the wafer by structure to uniformly compress the carrier film in response to a force from the wafer on the carrier film during the CMP operations. A distance between, and diameters of, adjacent holes of the carrier film are reduced, and the locations of the holes are in an array to coordinate with passageways through the vacuum chuck. The structure significantly reduces a maximum value of compression of the carrier film during CMP operations. As a result, during the CMP operations the wafer does not deform in a manner that exactly matches the compression of the carrier film, but remains essentially flat.
摘要翻译： CMP系统和方法提供了从真空卡盘通过载体膜施加到晶片的必要的真空和压力，而不会在CMP操作期间干扰期望的晶片平面化。 可以通过结构从晶片的暴露表面去除先前的晶圆上的低抛光率区域，以在CMP操作期间响应于载体膜上的晶片的力均匀地压缩载体膜。 载体膜的相邻孔之间的距离和直径减小，并且孔的位置处于与通过真空卡盘的通道协调的阵列中。 该结构在CMP操作期间显着降低了载体膜的压缩的最大值。 结果，在CMP操作期间，晶片不会以与载体膜的压缩精确匹配的方式变形，而是保持基本上平坦。
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5.发明授权公开(公告)号：US06520833B1
公开(公告)日：2003-02-18
申请号：US09608513
申请日：2000-06-30
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B21/004 , B24B21/04
摘要： A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate.
摘要翻译： 提供化学机械抛光（CMP）装置。 第一辊位于第一点，第二辊位于第二点，使得第一点与第二点分离。 还包括抛光垫条，并且具有固定到第一辊的第一端和在纸幅处理装置中固定到第二辊的第二端。 抛光垫条被配置成提供要被抛光的基底被降低到的表面。 优选地，抛光垫条是固定的研磨垫，并且被配置为接收化学品或去离子水，以便于从基材的表面去除材料。
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公开(公告)号：US20130056078A1
公开(公告)日：2013-03-07
申请号：US13668741
申请日：2012-11-05
申请人： Miguel A. Saldana , Greg Sexton
发明人： Miguel A. Saldana , Greg Sexton
IPC分类号： F17D1/00
CPC分类号： H01L21/6708 , H01L21/67017 , Y10T137/0318
摘要： An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.
摘要翻译： 一种用于在半导体处理室中提供用于处理衬底的多个工艺流体的装置。 该装置包括多个过程流体供应阀和限定在交叉阀和调节供应阀之间的流体供应网络。 该装置还包括通过调节供应阀连接到流体供应网络的调节流体供应。 该装置还包括多个工艺流体，其通过多个工艺流体供应阀连接到流体供应网络。 具有基板支撑件的处理室也包括在该装置中。 所述处理室还包括边缘流体供应源和中心流体供应源，所述边缘流体供应通过边缘使能阀连接到所述流体供应网络，并且所述中心供应件通过中心使能阀连接到所述流体供应网络。
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公开(公告)号：US06902466B2
公开(公告)日：2005-06-07
申请号：US10369919
申请日：2003-02-18
CPC分类号： B24B37/04 , B24B21/004 , B24B21/04
摘要： A chemical mechanical polishing (CMP) apparatus is provided. The CMP apparatus includes a first roller situated at a first point and a second roller situated at a second point. The first point is separate from the second point. Also included in the apparatus is a polishing pad strip having a first end secured to the first roller and a second end secured to the second roller. The first roller and the second roller are configured to reciprocate so that the polishing pad strip oscillates at least partially between the first point and the second point.
摘要翻译： 提供化学机械抛光（CMP）装置。 CMP装置包括位于第一点处的第一辊和位于第二点的第二辊。 第一点与第二点是分开的。 还包括在该设备中的是抛光垫条，其具有固定到第一辊的第一端和固定到第二辊的第二端。 第一辊和第二辊构造成往复运动，使得抛光垫条至少部分地在第一点和第二点之间振荡。
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公开(公告)号：US06561870B2
公开(公告)日：2003-05-13
申请号：US09823593
申请日：2001-03-30
IPC分类号： B24B4916
摘要： An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.
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公开(公告)号：US06585572B1
公开(公告)日：2003-07-01
申请号：US09644135
申请日：2000-08-22
IPC分类号： B24B100
CPC分类号： B24B37/20 , B24B53/017 , H01L21/30625
摘要： A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.
摘要翻译： 提供化学机械抛光（CMP）系统。 载体具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片。 还包括制备头，并且被设计成被施加到小于晶片表面的整个部分的晶片的至少一部分。 优选地，制备头和载体被构造成沿相反方向旋转。 此外，准备头还被配置为在从晶片的中心的方向之一到晶片的边缘并且从晶片的边缘到晶片的中心线性移动的同时振荡，以便于精确控制 从晶片的成形层去除材料。
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公开(公告)号：US08671965B2
公开(公告)日：2014-03-18
申请号：US13668741
申请日：2012-11-05
申请人： Miguel A. Saldana , Greg Sexton
发明人： Miguel A. Saldana , Greg Sexton
IPC分类号： F17D1/00
CPC分类号： H01L21/6708 , H01L21/67017 , Y10T137/0318
摘要： An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.
摘要翻译： 一种用于在半导体处理室中提供用于处理衬底的多个工艺流体的装置。 该装置包括多个过程流体供应阀和限定在交叉阀和调节供应阀之间的流体供应网络。 该装置还包括通过调节供应阀连接到流体供应网络的调节流体供应。 该装置还包括多个工艺流体，其通过多个工艺流体供应阀连接到流体供应网络。 具有基板支撑件的处理室也包括在该装置中。 所述处理室还包括边缘流体供应源和中心流体供应源，所述边缘流体供应通过边缘使能阀连接到所述流体供应网络，并且所述中心供应通过中心使能阀连接到所述流体供应网络。
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