公开(公告)号：US07001848B1

公开(公告)日：2006-02-21

申请号：US09199829

申请日：1998-11-25

申请人： Patricia B. Smith ,  David B. Aldrich ,  Stephen W. Russell

发明人： Patricia B. Smith ,  David B. Aldrich ,  Stephen W. Russell

IPC分类号： H01L21/302

CPC分类号： G03F7/427 ,  H01L21/02063 ,  H01L21/31138

摘要： Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer 226 of FIG. 2a) on the first conductor (conductor 222 of FIG. 2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer 234 of FIG. 2d) on the dielectric layer, the oxygen-sensitive material substantially filling the opening in the dielectric layer and for providing an electrical contact to the first conductor; forming a photoresist layer on the oxygen-sensitive material, the photoresist layer having a pattern so as to expose portions of the oxygen-sensitive material; removing the exposed portions of the oxygen-sensitive material on the dielectric material, the removal step causing a residue to be formed on exposed surfaces of the remaining portions of the oxygen-sensitive material; and removing the photoresist layer by subjecting the photoresist layer with a hydrogen-containing gas incorporated into a plasma.

摘要翻译： 本发明的另一实施例是一种制造导电互连的方法，用于在第一导体和用于形成在半导体衬底中的电子器件的第二导体之间提供电连接，所述方法包括以下步骤：形成电介质层（层 图2A的226）在第一导体（图2a的导体222）上，电介质层具有暴露第一导体的至少一个开口; 在电介质层上形成氧敏感材料层（图2d的层234），氧敏感材料基本上填充介电层中的开口并提供与第一导体的电接触; 在所述感氧材料上形成光致抗蚀剂层，所述光致抗蚀剂层具有图案以暴露所述氧敏感材料的部分; 去除电介质材料上的氧敏感材料的暴露部分，去除步骤，使残留物形成在氧敏感材料的剩余部分的暴露表面上; 以及通过将掺入等离子体的含氢气体对光致抗蚀剂层进行处理来除去光致抗蚀剂层。

公开(公告)号：US6074943A

公开(公告)日：2000-06-13

申请号：US61320

申请日：1998-04-16

申请人： Kenneth D. Brennan ,  David B. Aldrich ,  Eden M. Zielinski ,  Peter S. McAnally

发明人： Kenneth D. Brennan ,  David B. Aldrich ,  Eden M. Zielinski ,  Peter S. McAnally

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/31116 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76852

摘要： A structure and method to direct the via 270 etch to the top of the interconnect 210, by using a sidewall layer 240, preferably TiN, and thus preventing the etching down the side of the interconnect 210 and exposure of materials residing between the interconnects 210.

摘要翻译： 通过使用侧壁层240（优选为TiN）将通孔270蚀刻引导到互连210的顶部，从而防止互连210的侧面蚀刻和位于互连210之间的材料的暴露的结构和方法。

公开(公告)号：US06958294B2

公开(公告)日：2005-10-25

申请号：US10457653

申请日：2003-06-09

申请人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

发明人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

IPC分类号： G03F7/42 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC分类号： G03F7/427 ,  H01L21/31138 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838

摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium. The gas which includes hydrogen or deuterium is, preferably, comprised of a gas selected from the group consisting of: NH3, N2H2, H2S, CH4, and deuterated forms of these gases, and may, additionally, include a forming gas. The forming gas is, preferably, comprised of a gas consisting of: argon, nitrogen, and any other inert gas.

摘要翻译： 本发明的一个实施例是一种制造形成在半导体晶片上的电子器件的方法，该方法包括以下步骤：在衬底上形成第一材料层（图6C的层622）; 在所述第一材料的层上形成光致抗蚀剂层（图6b的层626）; 图案化第一材料的层; 在图案化第一材料层之后去除光致抗蚀剂层; 并对半导体晶片进行包含含有氢或氘气体的等离子体，以从第一材料中除去残留物。 优选地，去除光致抗蚀剂层的步骤通过使半导体晶片经受包含基本上包括氢或氘的气体的等离子体来进行。 包括氢或氘的气体优选由选自以下的气体组成：NH 3，N 2 H 2 H 2， ，H 2 S 2 CH 4，以及这些气体的氘代形式，并且还可以包括形成气体。 形成气体优选由由氩，氮和任何其它惰性气体组成的气体组成。

公开(公告)号：US06599829B2

公开(公告)日：2003-07-29

申请号：US10082759

申请日：2002-02-25

申请人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

发明人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

IPC分类号： H01L214763

CPC分类号： G03F7/427 ,  H01L21/31138 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838

摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium. The gas which includes hydrogen or deuterium is, preferably, comprised of a gas selected from the group consisting of: NH3, N2H2, H2S, CH4, and deuterated forms of these gases, and may, additionally, include a forming gas. The forming gas is, preferably, comprised of a gas consisting of: argon, nitrogen, and any other inert gas.

公开(公告)号：US06727185B1

公开(公告)日：2004-04-27

申请号：US09679800

申请日：2000-10-05

申请人： Patricia B. Smith ,  Antonio L. P. Rotondaro ,  David B. Aldrich ,  Eric C. Williams

发明人： Patricia B. Smith ,  Antonio L. P. Rotondaro ,  David B. Aldrich ,  Eric C. Williams

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  Y10S438/906

摘要： A cleanup process that uses a dilute fluorine in oxygen chemistry in a downstream plasma tool to remove organic and inorganic polymeric residues (116).

摘要翻译： 在下游等离子体工具中使用氧化学中的稀氟来去除有机和无机聚合物残余物的清除方法（116）。

公开(公告)号：US06600208B2

公开(公告)日：2003-07-29

申请号：US09953515

申请日：2001-09-10

申请人： Kenneth D. Brennan ,  Douglas A. Prinslow ,  David B. Aldrich

发明人： Kenneth D. Brennan ,  Douglas A. Prinslow ,  David B. Aldrich

IPC分类号： H01L2900

CPC分类号： H01L28/10 ,  H01L23/5227 ,  H01L23/552 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A versatile system for reducing electromagnetic interference resulting from an inductor (300) formed within an integrated circuit is disclosed, including an inductor layer (310) having conductive elements (326) about its perimeter, first (306) and second (308) isolation layers disposed upon on opposite sides of the inductor layer and having conductive elements (326) about their perimeters, and first (302) and second (304) shield layers surrounding the first and second isolation layers, respectively, and coupled together by the conductive elements (326) of the isolation and inductor layers.

公开(公告)号：US07109838B2

公开(公告)日：2006-09-19

申请号：US09953310

申请日：2001-09-10

申请人： Kenneth D. Brennan ,  Douglas A. Prinslow ,  David B. Aldrich

发明人： Kenneth D. Brennan ,  Douglas A. Prinslow ,  David B. Aldrich

IPC分类号： H01F5/00

CPC分类号： H01L28/10 ,  H01F17/0033 ,  H01L27/08

摘要： An inductor integrated in a semiconductor device comprises a first and second lower electrical trace, an upper electrical trace, aligned at a first end with a first end of the first lower electrical trace and at a second end with a second end of the second lower electrical trace, a first via intercoupling the first end of the upper electrical trace with the first end of the first lower electrical trace, and a second via intercoupling the second end of the upper electrical trace with the second end of the second lower electrical trace.

摘要翻译： 集成在半导体器件中的电感器包括第一和第二下电迹线，上电迹线，在第一端处与第一下电迹线的第一端对准，在第二端处与第二下电极的第二端对准 轨迹，第一通过将上电迹线的第一端与第一下电迹线的第一端相互配合，以及第二通道，将上电迹线的第二端与第二下电迹线的第二端互耦合。

公开(公告)号：US06246120B1

公开(公告)日：2001-06-12

申请号：US09401964

申请日：1999-09-22

申请人： Kenneth D. Brennan ,  David B. Aldrich ,  Eden M. Zielinski ,  Peter S. McAnally

发明人： Kenneth D. Brennan ,  David B. Aldrich ,  Eden M. Zielinski ,  Peter S. McAnally

IPC分类号： H01L2348

CPC分类号： H01L21/31116 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76852

摘要： A structure and method to direct the via 270 etch to the top of the interconnect 210, by using a sidewall layer 240, preferably. TiN, and thus preventing the etching down the side of the interconnect 210 and exposure of materials residing between the interconnects 210.

摘要翻译： 通过使用侧壁层240优选地将通孔270蚀刻引导到互连210的顶部的结构和方法。 TiN，从而防止了互连210侧的蚀刻和位于互连210之间的材料的暴露。