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23 条记录 (耗时 0.025 秒)

    Method for deposition of silicon oxide on a wafer
    3.
    发明授权
    Method for deposition of silicon oxide on a wafer 失效
    在晶圆上沉积氧化硅的方法

    公开(公告)号：US4988533A

    公开(公告)日：1991-01-29

    申请号：US203583

    申请日：1988-05-27

    申请人： Dean W. Freeman ,  Joseph D. Luttmer ,  Patricia B. Smith ,  Cecil J. Davis

    发明人： Dean W. Freeman ,  Joseph D. Luttmer ,  Patricia B. Smith ,  Cecil J. Davis

    IPC分类号： C23C16/40

    CPC分类号： C23C16/402

    摘要： A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.

    摘要翻译： 使用单个处理室在温度敏感晶片上沉积氧化硅层的处理装置和方法向室提供氧化亚氮气体，其中激发能由远程产生的等离子体提供，同时将硅烷气体与照射晶片同时 原位产生的紫外线能量以产生氧化硅层。

    Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
    6.
    发明授权
    Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization 有权
    光致抗蚀剂条，侧壁聚合物去除和铝金属化钝化的方法

    公开(公告)号：US06958294B2

    公开(公告)日：2005-10-25

    申请号：US10457653

    申请日：2003-06-09

    申请人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

    发明人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

    IPC分类号： G03F7/42 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： G03F7/427 ,  H01L21/31138 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838

    摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium. The gas which includes hydrogen or deuterium is, preferably, comprised of a gas selected from the group consisting of: NH3, N2H2, H2S, CH4, and deuterated forms of these gases, and may, additionally, include a forming gas. The forming gas is, preferably, comprised of a gas consisting of: argon, nitrogen, and any other inert gas.

    摘要翻译： 本发明的一个实施例是一种制造形成在半导体晶片上的电子器件的方法，该方法包括以下步骤：在衬底上形成第一材料层（图6C的层622）; 在所述第一材料的层上形成光致抗蚀剂层（图6b的层626）; 图案化第一材料的层; 在图案化第一材料层之后去除光致抗蚀剂层; 并对半导体晶片进行包含含有氢或氘气体的等离子体，以从第一材料中除去残留物。 优选地，去除光致抗蚀剂层的步骤通过使半导体晶片经受包含基本上包括氢或氘的气体的等离子体来进行。 包括氢或氘的气体优选由选自以下的气体组成：NH 3，N 2 H 2 H 2， ，H 2 S 2 CH 4，以及这些气体的氘代形式，并且还可以包括形成气体。 形成气体优选由由氩，氮和任何其它惰性气体组成的气体组成。

    Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
    7.
    发明授权
    Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization 有权

    公开(公告)号：US06599829B2

    公开(公告)日：2003-07-29

    申请号：US10082759

    申请日：2002-02-25

    申请人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

    发明人： Patricia B. Smith ,  Guoqiang Xing ,  David B. Aldrich

    IPC分类号： H01L214763

    CPC分类号： G03F7/427 ,  H01L21/31138 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838

    摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium. The gas which includes hydrogen or deuterium is, preferably, comprised of a gas selected from the group consisting of: NH3, N2H2, H2S, CH4, and deuterated forms of these gases, and may, additionally, include a forming gas. The forming gas is, preferably, comprised of a gas consisting of: argon, nitrogen, and any other inert gas.

    Oxygen-free, dry plasma process for polymer removal
    8.
    发明授权
    Oxygen-free, dry plasma process for polymer removal 有权
    无氧干燥等离子体处理聚合物去除

    公开(公告)号：US06277733B1

    公开(公告)日：2001-08-21

    申请号：US09408022

    申请日：1999-09-29

    申请人： Patricia B. Smith

    发明人： Patricia B. Smith

    IPC分类号： H01L214763

    CPC分类号： H01L21/7681 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76838

    摘要： An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a conductive structure over the substrate, the conductive structure comprised of an oxygen-sensitive conductor; forming a layer of dielectric material over the conductive structure (step 306 of FIG. 1); forming a photoresist layer over the layer of the dielectric material (step 308 of FIG. 1); patterning the layer of the dielectric material (step 308); removing the photoresist layer after patterning the layer of the dielectric material (step 312 of FIG. 1); and subjecting the semiconductor wafer to a plasma which incorporates the combination of hydrogen or deuterium and a fluorine-containing mixture which is comprised of a gas selected from the group consisting of: CF4, C2F6, CHF3, CFH3 and other fluorine-containing hydrocarbon (step 313 of FIG. 1).

    摘要翻译： 本发明的一个实施例是一种制造形成在半导体晶片上的电子器件的方法，该方法包括以下步骤：在衬底上形成导电结构，该导电结构由氧敏导体组成; 在导电结构上形成介电材料层（图1的步骤306）; 在介电材料的层上形成光致抗蚀剂层（图1的步骤308）; 图案化介电材料层（步骤308）; 在图案化介电材料层之后去除光致抗蚀剂层（图1的步骤312）; 并且对半导体晶片进行包含氢或氘的组合的等离子体和由选自以下的气体构成的含氟混合物：CF4，C2F6，CHF3，CFH3等含氟烃（步骤 313）。

    Method for dry etching openings in integrated circuit layers
    9.
    发明授权
    Method for dry etching openings in integrated circuit layers 失效
    集成电路层干蚀刻开孔方法

    公开(公告)号：US5157000A

    公开(公告)日：1992-10-20

    申请号：US652506

    申请日：1991-02-08

    申请人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    发明人： Jerome L. Elkind ,  Patricia B. Smith ,  Larry D. Hutchins ,  Joseph D. Luttmer ,  Rudy L. York ,  Julie S. England

    IPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/4757

    CPC分类号： H01L21/465 ,  H01L21/467 ,  H01L21/47573 ,  Y10S148/051

    摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.

    摘要翻译： 公开了通过蚀刻剂物质（52）与碲化汞镉（HgCdTe）或硫化锌（ZnS）层（42）的反应可以形成通孔（50）的方法。 活性气体（20）优选为在二次电等离子体反应器（100）中激发的氢气或甲烷气体，二极管等离子体反应器（100）具有施加到两个平行电极之一的RF电源（13）。 蚀刻发生在驻留在ZnS或HgCdTe层（42）上的光致抗蚀剂图案（44）中的选定区域中。 在干蚀刻之后用湿蚀刻剂（54）湿蚀刻层（42），通过使壁（48）更平滑并允许将通孔（50）膨胀到适当的尺寸所需的尺寸来改善通孔（50） 基于HgCdTe的红外探测器的运行。