Low dielectric constant silicon coating, method for the preparation and application thereof to integrated circuits
    3.
    发明授权
    Low dielectric constant silicon coating, method for the preparation and application thereof to integrated circuits 失效
    低介电常数硅涂层,其制备方法和应用于集成电路

    公开(公告)号:US08080286B2

    公开(公告)日:2011-12-20

    申请号:US12064062

    申请日:2006-08-16

    IPC分类号: B05D3/02 C08J7/18

    摘要: The present invention concerns a process for the preparation of a silicone coating of low dielectric constant, comprising the following essential steps: a) a film-forming silicone composition is deposited on the surface of a substrate, said silicone composition comprising: (i) at least one crosslinkable film-forming silicone resin, (ii) at least one α,ω-hydroxylated, essentially linear silicone oil capable of degrading under the action of heat, and (iii) at least one solvent capable of rendering the silicone resin (i) compatible with the silicone oil (ii), b) the solvent (iii) is removed, preferably by heating, and, simultaneously or sequentially, c) the film-forming silicone composition is cured by heating. The invention deals also with a silicone coating obtained by this process and an integrated circuit comprising such a silicone coating as an electrical insulator.

    摘要翻译: 本发明涉及一种制备低介电常数硅氧烷涂层的方法,包括以下必要步骤:a)成膜硅氧烷组合物沉积在基材表面上,所述有机硅组合物包括:(i) 至少一种交联性成膜硅氧烷树脂,(ii)能够在热作用下降解的至少一种α,ω-羟基化,基本上直链的硅油,和(iii)至少一种能够使硅树脂(i ),b)优选通过加热,同时或顺序地除去溶剂(iii),c)通过加热固化成膜硅氧烷组合物。 本发明还涉及通过该方法获得的硅氧烷涂层和包括这种作为电绝缘体的硅氧烷涂层的集成电路。